Infineon Technologies IPS040N03LGBKMA1

Overview

IPS040N03LGBKMA1 from Infineon Technologies is an N-channel logic-level OptiMOS®3 power MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 4 mΩ R_DS(on) (max) at V_GS = 10 V, and 90 A continuous drain current at T_C = 25 °C. It features avalanche rating, low gate charge × R_DS(on) figure-of-merit, and is qualified per JEDEC standards for DC/DC converters and SMPS.

For engineers reviewing the IPS040N03LGBKMA1 datasheet, IPS040N03LGBKMA1 pinout, IPS040N03LGBKMA1 application, or IPS040N03LGBKMA1 equivalent, this device is selected for high-efficiency synchronous rectification, low-voltage motor control, and compact 12 V/5 V point-of-load regulators where fast switching, low conduction loss, and robust thermal performance are critical.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low R_DS(on) and fast switching in unidirectional power stages. Its logic-level gate threshold (1–2.2 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting, and its 18–24 nC total gate charge supports efficient operation at 500 kHz–1 MHz switching frequencies.

The device integrates a robust body diode with 66 A continuous forward current and 20 nC reverse recovery charge, enabling reliable freewheeling in buck and half-bridge topologies. Thermal resistance R_thJC = 1.9 K/W ensures effective heat transfer to the PCB copper pad under sustained load conditions.

Key Specifications

Pinout & Package

IPS040N03LGBKMA1 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package has three terminals: Drain (tab), Source (pin 1), and Gate (pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPB040N03LG and IRL3803PBF, IPS040N03LGBKMA1 delivers superior FOM and JEDEC qualification in a compact DPAK, making it optimal for space-constrained, high-reliability 30 V synchronous rectifiers where thermal management relies on PCB copper rather than heatsinks.

Availability

IPS040N03LGBKMA1 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC I/O modules, and 12 V automotive body control units requiring stable component supply and long-term production continuity.

Supply support for IPS040N03LGBKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS®3 product line-designed specifically for high-frequency, high-efficiency DC/DC conversion in computing, communications, and industrial power supplies where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum safe operating temperature for IPS040N03LGBKMA1?

The junction temperature must not exceed 175 °C under any operating condition. At T_C = 100 °C, the device supports 76 A continuous drain current. Derating curves in the datasheet show linear reduction of I_D above 25 °C case temperature, with R_thJC = 1.9 K/W defining thermal limits for PCB-mounted designs.

Can IPS040N03LGBKMA1 be used as a high-side switch with 3.3 V gate drive?

Yes-it is a logic-level MOSFET with V_GS(th) ranging from 1.0 to 2.2 V, and R_DS(on) = 4.7–5.9 mΩ at V_GS = 4.5 V. At 3.3 V, typical R_DS(on) increases to ~7.5 mΩ (per transfer curves), supporting moderate-current applications like LED drivers or low-power loads where <100 mW conduction loss is acceptable.

Does IPS040N03LGBKMA1 include integrated protection features?

No internal protection circuitry (e.g., overtemperature shutdown or current limiting) is integrated. Protection must be implemented externally via gate driver ICs or controller feedback loops. However, the device's inherent avalanche rating (E_AS = 60 mJ) provides passive ruggedness against inductive switching stress without additional components.

Is the PG-TO252-3-11 package lead-free and RoHS compliant?

Yes-IPS040N03LGBKMA1 uses Pb-free plating and complies fully with RoHS Directive 2011/65/EU. The package meets JEDEC moisture sensitivity level MSL-1 (unlimited floor life at ≤30 °C/85% RH), and reflow profile adheres to J-STD-020, supporting standard lead-free assembly processes.