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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS04N03LA G

Name: IPS04N03LA G
Brand: Infineon Technologies
SKU: IPS04N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPS04N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: IPS04N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPS04N03LA G from Infineon Technologies is a logic-level N-channel MOSFET in PG-TO252-3-11 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 3.8 mΩ max R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, low gate charge (Q_g = 31–41 nC), and integrated body diode with 50 A continuous forward current - deployed in high-efficiency DC-DC synchronous rectification stages.

For engineers reviewing the IPS04N03LA G datasheet, IPS04N03LA G pinout, IPS04N03LA G application, or IPS04N03LA G equivalent, key selection criteria include R_DS(on) at 4.5 V drive, thermal resistance (R_thJC = 1.3 K/W), avalanche energy rating (E_AS = 600 mJ), and reverse diode dv/dt capability (6 kV/µs) in high-speed switching power supplies.

Technical Context

This OptiMOS®2 device uses planar trench-gate technology optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency operation in 12 V input synchronous buck converters. Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) ensures reliable turn-on with standard logic-level drivers.

Thermal performance is defined by R_thJC = 1.3 K/W (junction-to-case) and R_thJA = 50 K/W on 6 cm² PCB copper area. The integrated body diode supports synchronous rectification with Q_rr = 15 nC and V_SD = 0.89–1.2 V at I_F = 50 A and T_j = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V bus applications with margin
R_DS(on) max	3.8 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 50 A in compact layouts
I_D continuous	50 A at T_C = 25 °C - Limited by bondwire; usable up to 100 °C case with derating
Q_g	31–41 nC - Low gate drive power requirement for 500 kHz–1 MHz switching
E_AS	600 mJ - Withstands single-pulse inductive energy without failure in hard-switched topologies
R_thJC	1.3 K/W - Supports >100 W power dissipation with moderate heatsinking
dv/dt rating	6 kV/µs - Resists false turn-on during fast voltage transients in motor drives

Pinout & Package

IPS04N03LA G is housed in PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts logic-level 4.5 V drive; low C_iss (3909–5199 pF) minimizes driver loading
Pin 2 (Drain)	High-side or low-side switch node	Exposed copper tab - primary thermal path to PCB; electrically connected to drain
Pin 3 (Source)	Reference node for gate drive	Provides return path for gate current and source current; ties to power ground or SW node

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Turns fully on at V_GS = 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V control systems
Optimized FOM (R_DS(on) × Q_g)	~120 mΩ·nC - balances conduction and switching losses for high-frequency DC-DC converters
Robust body diode	Q_rr = 15 nC, V_SD ≤ 1.2 V - reduces reverse recovery loss and EMI in synchronous rectifiers
High-temperature operation	Rated to T_j = 175 °C - supports sealed or high-ambient environments without derating penalties

Applications

Server VRM

Automotive Body Control Module

Use Scenario: Point-of-load (POL) converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role: Synchronous rectifier in 4-phase interleaved buck stage operating at 600 kHz.

Use Value: 3.8 mΩ R_DS(on) and 41 nC Q_g enable >94% efficiency at 100 A load while maintaining thermal margin on 2-layer PCB.

Use Scenario: High-side load switch controlling LED headlamp arrays in 12 V automotive systems.

IC Role / Device Role: Low-loss power switch with integrated reverse diode for PWM dimming and short-circuit protection.

Use Value: 175 °C rating and 600 mJ E_AS ensure reliability during load dump transients and hot-cranking conditions.

Industrial PLC I/O Driver

USB-C PD Power Path

Use Scenario: Solid-state relay replacement for 24 V DC output modules driving solenoids and valves.

IC Role / Device Role: Low-side switch with fast turn-off (t_f = 6.6–10 ns) and controlled dv/dt.

Use Value: 6 kV/µs dv/dt immunity prevents spurious turn-on during inductive kickback, eliminating snubber components.

Use Scenario: Bidirectional power path switch in USB-C PD 3.0 sink applications with 20 V max input.

IC Role / Device Role: Reverse-blocking switch managing VBUS routing between port controller and battery charger.

Use Value: 25 V V_DS rating and 50 A I_D support 100 W (5 A @ 20 V) delivery with minimal voltage drop across R_DS(on).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD04N03LA G	Same die, PG-TO252-3-11 package, identical R_DS(on) and Q_g; differs only in marking and internal traceability	No functional difference - qualified for same JEDEC target applications	Select when requiring Infineon's standard DPAK variant with full production traceability
IRLHS6342TRPBF	Higher R_DS(on) (4.5 mΩ @ 4.5 V), lower Q_g (25 nC), smaller 2×2 mm PQFN package	Better suited for space-constrained portable designs; less thermal mass than TO252	Choose for ultra-compact 12 V POL where board area outweighs thermal performance

Compared with IPD04N03LA G, IPS04N03LA G offers identical electrical specs but distinct internal lot tracking; versus IRLHS6342TRPBF, it trades higher R_DS(on) for superior thermal handling and higher pulse current capability in industrial-grade layouts.

Availability

IPS04N03LA G is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, industrial PLC I/O drivers, and USB-C PD power path designs requiring stable component supply and long-term manufacturability.

Supply support for IPS04N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, automotive, and industrial power systems where low R_DS(on) and robust thermal behavior are critical.

FAQ

Is IPS04N03LA G suitable for synchronous rectification in a 48 V input buck converter?

No - its 25 V V_DS rating is insufficient for 48 V bus applications. It is designed for ≤12 V input systems (e.g., server VRMs, automotive 12 V rails). For 48 V, consider Infineon's OptiMOS™ 5 60 V or 80 V families with appropriate R_DS(on) and Q_g trade-offs.

What is the maximum PCB copper area required to achieve R_thJA = 50 K/W?

A 6 cm² (e.g., 40 mm × 40 mm) single-layer 70 µm thick copper area connected to the drain tab achieves R_thJA = 50 K/W in vertical still-air orientation. Smaller areas increase thermal resistance linearly; doubling copper area yields only marginal improvement due to convection limits.

Does IPS04N03LA G have avalanche ruggedness rated for repetitive operation?

No - the 600 mJ E_AS rating is for single-pulse conditions only (I_D = 45 A, R_GS = 25 Ω). Repetitive avalanche stress is not characterized or guaranteed; system design must avoid repeated inductive energy dumping into the device.

Can the body diode be used for freewheeling in discontinuous conduction mode (DCM)?

Yes - the body diode supports 50 A continuous forward current and exhibits low V_SD (0.89–1.2 V) and Q_rr = 15 nC, making it suitable for DCM freewheeling in synchronous buck or boost converters below 1 MHz, provided junction temperature remains within 175 °C limit.

IPS04N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5199 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-11

IPS04N03LA G FAQ

1.How can I place an order for IPS04N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS04N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS04N03LA G reliable?

The price and inventory of IPS04N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS04N03LA G is usually 5 days.

3.What payment methods are accepted for IPS04N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS04N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS04N03LA G?

IPS04N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS04N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS04N03LA G?

For technical support, including IPS04N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS04N03LA G requirements.

6.How does Aetrix verify that IPS04N03LA G is sourced from the original manufacturer or authorized distributors?

All IPS04N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS04N03LA G meets industry standards.

7.What is the process for return or replacement of IPS04N03LA G?

All IPS04N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPS04N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS04N03LA G part is unused and in its original packaging.

Return procedure for IPS04N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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