Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS090N03LGAKMA1

Name: IPS090N03LGAKMA1
Brand: Infineon Technologies
SKU: IPS090N03LGAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPS090N03LGAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: IPS090N03LGAKMA1.pdf

Description:: MOSFET N-CH 30V 40A TO251-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,342

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPS090N03LGAKMA1 from Infineon Technologies is a 30 V, 90 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 (3.3 × 3.3 mm) package, optimized for high-efficiency synchronous buck converters and motor control stages with low R_DS(on) of 1.7 mΩ at V_GS = 10 V and gate charge of 54 nC. It supports continuous drain current up to 90 A at T_C = 25 °C and operates in automotive-grade temperature range.

For engineers reviewing the IPS090N03LGAKMA1 datasheet, IPS090N03LGAKMA1 pinout, IPS090N03LGAKMA1 application, or IPS090N03LGAKMA1 equivalent, key selection criteria include R_DS(on), Q_g, thermal resistance (R_thJC = 0.9 K/W), SOA robustness, and AEC-Q101 qualification status for automotive power stages.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 5 technology with trench-gate structure and split-gate design to achieve ultra-low conduction loss and fast switching with controlled dV/dt. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

The device features integrated ESD protection (HBM Class 2), avalanche-rated operation (E_AS = 250 mJ), and enhanced body diode reverse recovery performance (Q_rr = 42 nC, t_rr = 35 ns) - critical for hard-switched synchronous rectification and H-bridge motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V automotive and industrial bus systems.
R_DS(on) @ V_GS = 10 V	1.7 mΩ - Enables <1.5 W conduction loss at 90 A, reducing heatsink requirements in high-current DC/DC stages.
Q_g	54 nC - Optimized for 500 kHz–1 MHz switching in compact POL converters with minimal gate driver power demand.
R_thJC	0.9 K/W - Supports >70 W power dissipation at ΔT = 63 K, enabling high-current operation with standard PCB copper area.
I_D, cont @ T_C = 25 °C	90 A - Rated for sustained load current in motor phase switches and battery disconnect circuits.
E_AS	250 mJ - Avalanche energy rating verified per JEDEC JESD24-11, ensuring reliability under inductive turn-off stress.
Q_rr	42 nC - Low reverse recovery charge minimizes cross-conduction loss and EMI in synchronous rectifiers.

Pinout & Package

IPS090N03LGAKMA1 is housed in PG-TDSON-8 (3.3 × 3.3 mm, 0.9 mm height), thermally enhanced surface-mount package with exposed drain pad on bottom side for direct PCB copper thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Drain (D)	Internally connected to exposed thermal pad; primary current path and heat sink interface.
4	Gate (G)	Control terminal; logic-compatible input requiring ≤2.2 V threshold for full enhancement.
8	Source (S)	Reference node for gate drive; tied to power ground in low-side switch configuration.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
Ultra-low R_DS(on) × Q_g figure-of-merit	91.8 mΩ·nC - Balances conduction and switching losses for highest efficiency in 48 V–12 V DC/DC converters.
Fast, soft body diode	t_rr = 35 ns, Q_rr = 42 nC - Reduces voltage overshoot and gate oscillation during freewheeling in half-bridge topologies.
Enhanced dv/dt ruggedness	Tested to 50 V/ns at V_DS = 24 V - Ensures noise immunity and reliable operation in noisy motor drive environments.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and JEDEC JS709C standards for environmentally constrained industrial and automotive production.

Applications

Automotive DC/DC Converter

Industrial Motor Drive

Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier switch operating at 250–500 kHz.

Use Value: 1.7 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 2.8 mΩ devices, enabling >96% peak efficiency at 60 A output.

Use Scenario: 3-phase inverter stage for 1–3 kW servo drives in CNC machinery.

IC Role / Device Role / Timing Role: Phase-leg low-side switch with gate drive referenced to floating source node.

Use Value: 54 nC Q_g allows clean 100 ns turn-on with 2 A gate drivers, minimizing dead-time loss and torque ripple.

Server VRM Power Stage

Battery Protection Circuit

Use Scenario: Single-phase 50 A power stage in AI accelerator card VRMs.

IC Role / Device Role / Timing Role: Bottom-FET in multiphase buck converter with 1 MHz switching frequency.

Use Value: R_thJC = 0.9 K/W enables 70 W dissipation using only 200 mm² 2-oz copper, eliminating external heatsinks.

Use Scenario: Primary overcurrent and short-circuit protection switch in 24 V Li-ion battery packs.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactor in BMS main disconnect path.

Use Value: 250 mJ E_AS rating withstands 10× rated current surge for 100 µs during fault clearing without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 62 nC; non-AEC-Q101; same TDSON-8 footprint.	Lacks automotive qualification; suitable for industrial SMPS but not safety-critical vehicle systems.	Prefer when cost sensitivity outweighs AEC-Q101 requirement and gate drive capability supports higher Q_g.
IRL8721PBF	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 34 nC; TO-220AB package; no E_AS rating published.	Through-hole mounting limits board density; lower Q_g eases gate drive but higher R_DS(on) increases conduction loss.	Choose for prototyping or low-volume designs where thermal mass of TO-220 aids transient handling without PCB copper optimization.

Compared with STL220N3LLH6 and IRL8721PBF, IPS090N03LGAKMA1 delivers superior thermal performance (0.9 K/W vs. ≥1.5 K/W), automotive qualification, and best-in-class R_DS(on) × Q_g, making it optimal for space-constrained, high-reliability 24–48 V power stages.

Availability

IPS090N03LGAKMA1 is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial motor drives, and server VRM power stages requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for IPS090N03LGAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current switching in automotive 12 V/48 V systems and industrial power supplies demanding low R_DS(on), fast switching, and robust ruggedness.

FAQ

Is IPS090N03LGAKMA1 suitable for paralleling multiple devices in high-current applications?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing across parallel units. Layout must maintain symmetrical trace lengths and thermal coupling to the same copper plane; derating to 80% of total rated current is recommended for reliability at T_C > 85 °C.

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet. For robust long-term operation, gate drive should be limited to +12 V to avoid accelerated oxide degradation while maintaining full enhancement; negative bias down to –5 V improves noise immunity during high-dv/dt transitions.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes - a 2.2–4.7 Ω series gate resistor is recommended to dampen ringing caused by parasitic L_g/C_iss resonance. Values below 2 Ω risk shoot-through in half-bridge configurations; above 10 Ω increases switching loss and delays turn-off during fault conditions.

Can IPS090N03LGAKMA1 replace older OptiMOS™ 3 or 4 generation devices in existing designs?

Yes - identical PG-TDSON-8 footprint and improved specs allow drop-in replacement in most cases. However, verify gate drive strength (54 nC Q_g is 15% higher than OptiMOS™ 4 equivalents) and update thermal layout to leverage lower R_thJC for potential heatsink reduction.

IPS090N03LGAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-11

IPS090N03LGAKMA1 FAQ

1.How can I place an order for IPS090N03LGAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS090N03LGAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS090N03LGAKMA1 reliable?

The price and inventory of IPS090N03LGAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS090N03LGAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS090N03LGAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS090N03LGAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS090N03LGAKMA1?

IPS090N03LGAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS090N03LGAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS090N03LGAKMA1?

For technical support, including IPS090N03LGAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS090N03LGAKMA1 requirements.

6.How does Aetrix verify that IPS090N03LGAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS090N03LGAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS090N03LGAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS090N03LGAKMA1?

All IPS090N03LGAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS090N03LGAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS090N03LGAKMA1 part is unused and in its original packaging.

Return procedure for IPS090N03LGAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…