Infineon Technologies IPS09N03LA G

Overview

IPS09N03LA G from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-frequency DC/DC converters, featuring 25 V V_DS, 8.6 mΩ R_DS(on) (SMD version, V_GS = 10 V), 50 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It delivers low gate charge × R_DS(on) figure-of-merit and superior thermal resistance (R_thJC = 2.4 K/W) in a PG-TO251-3-11 package.

For engineers reviewing the IPS09N03LA G datasheet, IPS09N03LA G pinout, IPS09N03LA G application, or IPS09N03LA G equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) typ. 1.6 V), avalanche ruggedness (E_AS = 75 mJ), reverse diode dv/dt immunity (6 kV/µs), and SMD-optimized thermal performance on FR4 PCBs with 6 cm² copper area.

Technical Context

This MOSFET employs a trench-based OptiMOS®2 process to achieve low R_DS(on) and fast switching with C_iss = 1235–1642 pF and t_r = 5.6–8.4 ns. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device integrates a robust body diode with Q_rr = 10 nC and V_SD = 0.97–1.2 V at I_F = 50 A, supporting synchronous rectification in buck converters. Thermal design leverages low R_thJC and JEDEC-qualified reliability up to 175 °C junction operation.

Key Specifications

Pinout & Package

IPS09N03LA G is housed in a PG-TO251-3-11 package (leadless variant of TO-251), with exposed drain pad for thermal conduction and standard 3-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IPD09N03LA G and IPU09N03LA G, IPS09N03LA G offers identical silicon performance in a straight-lead TO251 variant optimized for automated pick-and-place and minimal PCB keep-out area-ideal for space-constrained server VRMs and telecom modules where thermal interface to small copper pads is prioritized over mechanical mounting strength.

Availability

IPS09N03LA G is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC/DC converters, automotive ADAS camera supplies, and telecom PoE+ powered devices requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPS09N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®2 Power-Transistor product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, industrial, and communications infrastructure where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum allowable gate-source voltage for IPS09N03LA G?

The absolute maximum V_GS is ±20 V, with rated operation up to ±16 V. Exceeding ±20 V risks permanent gate oxide damage. For reliable 3.3 V or 5 V logic-level drive, no external clamping is required due to the 1.6 V typical V_GS(th) and built-in gate protection diodes in the OptiMOS®2 process.

Can IPS09N03LA G be used in synchronous rectification without external diode emulation?

Yes - its body diode has characterized Q_rr = 10 nC and V_SD = 0.97 V at 50 A, enabling direct synchronous rectification in buck and flyback topologies. Gate timing must avoid shoot-through; typical dead-time requirements are 20–40 ns when paired with complementary high-side switches.

How does the PG-TO251-3-11 package affect thermal performance compared to TO-252?

Both packages share identical R_thJC = 2.4 K/W, but PG-TO251-3-11 has smaller PCB footprint and relies more heavily on thermal via density under the drain pad. With 6 cm² copper area and 4 thermal vias, it achieves R_thJA ≈ 50 K/W - matching TO-252 performance only when layout rules are strictly followed.

Is IPS09N03LA G suitable for automotive AEC-Q101 qualification?

No - while qualified per JEDEC J-STD-20/JESD22 for industrial reliability, IPS09N03LA G is not AEC-Q101 certified. For automotive applications, Infineon's AEC-Q101-qualified OptiMOS™ 5 variants (e.g., IPP09N03L) are recommended, offering identical voltage/current ratings with extended temperature screening and failure analysis.