Infineon Technologies IPS110N12N3GBKMA1

Overview

IPS110N12N3GBKMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO251-3 package, rated for 120 V V_DS, 75 A continuous drain current at T_C = 25 °C, and 11 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and features low gate charge (Q_g = 49–65 nC) and high avalanche energy (E_AS = 120 mJ), making it suitable for high-frequency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IPS110N12N3GBKMA1 datasheet, IPS110N12N3GBKMA1 pinout, IPS110N12N3GBKMA1 application, or IPS110N12N3GBKMA1 equivalent, key selection criteria include verified R_DS(on) at 10 V drive, thermal resistance R_thJC = 1.1 K/W, safe operating area under pulse conditions, and integrated body diode recovery performance (t_rr = 90 ns, Q_rr = 249 nC).

Technical Context

This OptiMOS™ 3 power transistor uses trench-gate silicon technology optimized for high-efficiency switching in hard-switched topologies. Its low R_DS(on) × Q_g figure-of-merit (FOM) enables reduced conduction and switching losses simultaneously, while the 175 °C rated junction supports compact thermal design in space-constrained industrial inverters.

The device integrates a robust intrinsic body diode with controlled reverse recovery (Q_rr = 249 nC, t_rr = 90 ns) and supports synchronous rectification in buck and LLC converters. Gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers and stable operation across -55 to +175 °C ambient range.

Key Specifications

Pinout & Package

IPS110N12N3GBKMA1 is housed in PG-TO251-3 (IPAK) package: single-die, surface-mount compatible leadframe with isolated tab (drain-connected). Thermal pad on underside requires soldered copper area per JEDEC MS-012 standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 120 V power MOSFET applications.

Compared with IPB110N12N3 G and IPP110N12N3 G, IPS110N12N3GBKMA1 offers the smallest PCB footprint and lowest thermal resistance among the three, making it optimal for space-constrained, high-power-density designs where surface-mount reliability is validated.

Availability

IPS110N12N3GBKMA1 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPS110N12N3GBKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and wafer fabrication infrastructure.

This device belongs to the OptiMOS™ 3 family-designed specifically for high-efficiency, high-frequency switching in industrial power conversion and motor control applications where low R_DS(on) and fast switching dynamics are critical.

FAQ

What is the maximum gate-source voltage rating for IPS110N12N3GBKMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) specification compliance; 12–15 V may improve switching speed but does not reduce R_DS(on) further and increases gate driver stress.

Can IPS110N12N3GBKMA1 be used in avalanche mode continuously?

No-it is rated for single-pulse avalanche energy (E_AS = 120 mJ), not repetitive avalanche operation. Continuous avalanche would exceed safe SOA limits and cause thermal runaway. Designers must implement overcurrent protection to limit fault duration to <10 µs.

Is the body diode suitable for synchronous rectification without external Schottky assist?

Yes-the integrated body diode has characterized t_rr = 90 ns and Q_rr = 249 nC at T_j = 25 °C, enabling clean commutation in synchronous buck topologies up to 300 kHz. However, at >150 °C junction temperature, Q_rr increases ~2.5×, so gate timing must be adjusted accordingly.

What is the minimum PCB copper area required for thermal performance at 75 A?

Per datasheet Rev. 2.4, a 6 cm² (e.g., 40 mm × 40 mm) single-layer 70 µm copper area connected to the drain tab is required to achieve R_thJA = 50 K/W in vertical still-air configuration. Reducing copper area below this degrades R_thJA nonlinearly and risks exceeding 175 °C junction temperature at full current.