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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS135N03LGAKMA1

Name: IPS135N03LGAKMA1
Brand: Infineon Technologies
SKU: IPS135N03LGAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPS135N03LGAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: IPS135N03LGAKMA1.pdf

Description:: MOSFET N-CH 30V 30A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPS135N03LGAKMA1 from Infineon Technologies is an N-channel logic-level MOSFET in DPAK (PG-TO252-3) package, rated for 30 V V_DS, 13.5 mΩ R_DS(on) at V_GS = 10 V, and 30 A continuous drain current at T_C = 25 °C. It features avalanche rating, low gate charge (Q_g = 6.4 nC), and optimized FOM for high-efficiency DC/DC converters and synchronous rectification.

For engineers reviewing the IPS135N03LGAKMA1 datasheet, IPS135N03LGAKMA1 pinout, IPS135N03LGAKMA1 application, or IPS135N03LGAKMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V drive, SOA robustness under pulsed loads, thermal resistance (R_thJC = 4.9 K/W), and reverse diode recovery charge (Q_rr = 10 nC) for synchronous buck topologies.

Technical Context

This OptiMOS™ 3 device uses trench-based silicon technology to achieve low conduction loss and fast switching with minimal gate drive requirements. Its logic-level threshold (V_GS(th) = 1–2.2 V) enables direct interfacing with 3.3 V and 5 V controllers without level-shifting.

The integrated body diode exhibits low forward voltage (V_SD = 0.98 V typ at 30 A) and controlled reverse recovery (Q_rr = 10 nC), supporting high-frequency synchronous rectification in point-of-load converters and motor drivers where shoot-through immunity and efficiency are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial DC/DC stages.
R_DS(on) max	13.5 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 30 A, reducing heatsink requirements in compact power modules.
I_D cont	30 A at T_C = 25 °C - Supports high-current output stages in server VRMs and telecom POL converters.
Q_g	6.4 nC at V_GS = 0–10 V - Low gate charge minimizes driver power loss and allows use of low-power gate drivers in space-constrained designs.
R_thJC	4.9 K/W - Enables efficient heat transfer from junction to PCB copper pad, critical for thermally dense SMD layouts.
Q_rr	10 nC - Predictable reverse recovery behavior reduces EMI and improves efficiency in synchronous rectifier operation.

Pinout & Package

IPS135N03LGAKMA1 is housed in a surface-mount DPAK (PG-TO252-3) package with exposed drain tab for thermal enhancement. The package footprint complies with JEDEC TO-252-3 standards and requires minimum copper area per datasheet thermal guidelines.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives logic-level gate drive; low V_GS(th) ensures turn-on with 3.3 V/5 V microcontrollers or PWM controllers.
Pin 2 + Tab (Drain)	High-side power path	Exposed metal tab serves as primary drain connection and thermal interface to PCB copper; must be soldered to large copper pour.
Pin 3 (Source)	Reference node	Provides return path for load current and gate drive reference; connects to ground or low-side switch source in half-bridge configurations.

Key Features

Feature	Design Value
Avalanche-rated operation	Single-pulse I_AS = 30 A and E_AS = 20 mJ enable robustness against inductive switching transients without external snubbers.
Logic-level gate drive	V_GS(th) range of 1–2.2 V supports direct drive from standard digital outputs, eliminating level-shifters in low-voltage control systems.
Optimized FOM (Q_g × R_DS(on))	~86 nC·mΩ - Balances switching and conduction losses for high-frequency (≥500 kHz) SMPS applications.
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliance ensure environmental compliance for industrial and automotive end equipment.

Applications

Server Point-of-Load Converter

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-efficiency 12 V → 1 V conversion for CPU/GPU VRMs in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, operating at 500–1000 kHz with 30 A peak load current.

Use Value: Low R_DS(on) and Q_rr reduce conduction and switching losses, enabling >95% efficiency at full load while minimizing thermal derating.

Use Scenario: Low-voltage (<30 V) BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, driven by 5 V gate driver with fast turn-off (t_f = 2.2 ns).

Use Value: Fast switching and avalanche rating tolerate back-EMF spikes during commutation, improving system reliability without added clamping components.

Telecom DC/DC Module

Automotive Body Control Unit

Use Scenario: Compact 48 V → 12 V intermediate bus converter in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant converter, handling 30 A continuous current at elevated ambient temperatures.

Use Value: R_thJA = 50 K/W on 6 cm² PCB copper enables stable operation up to 85 °C ambient without forced airflow.

Use Scenario: Load switching for LED lighting and solenoid drivers in 12 V automotive body electronics.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by 3.3 V MCU GPIO, leveraging logic-level gate for direct interface.

Use Value: Low V_GS(th) and high I_D rating allow single-device replacement of discrete driver + MOSFET combos, reducing BOM count and PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N3LLH6	R_DS(on) = 14.5 mΩ @ 10 V; Q_g = 7.2 nC; same DPAK package	Slightly higher conduction loss and gate drive energy; identical thermal footprint	Preferred when STMicroelectronics supply chain alignment is required and 0.5 mΩ R_DS(on) penalty is acceptable.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 12.5 mΩ @ 10 V; Q_g = 7.8 nC; SO-8FL package (smaller footprint, higher R_thJA)	Lower R_DS(on) but higher Q_g and less thermal capability (R_thJC = 6.5 K/W); not drop-in due to different package	Select when board space is constrained and thermal management via heatsink is feasible.

Compared with STL135N3LLH6 and NTMFS4C09NT1G, IPS135N03LGAKMA1 offers the best balance of low R_DS(on), moderate Q_g, and superior thermal performance in DPAK-making it optimal for thermally demanding, high-current DC/DC applications where both efficiency and reliability are prioritized.

Availability

IPS135N03LGAKMA1 is available at Aetrix Electronics and suitable for server point-of-load converters, industrial motor drives, and telecom DC/DC modules requiring stable component supply, long-term manufacturability, and JEDEC-qualified reliability.

Supply support for IPS135N03LGAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

This device belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-frequency power conversion in computing, telecom, and industrial applications where low R_DS(on) and fast switching are essential.

FAQ

Is IPS135N03LGAKMA1 suitable for synchronous rectification in a 500 kHz buck converter?

Yes. With R_DS(on) = 13.5 mΩ at 10 V, Q_rr = 10 nC, and t_f = 2.2 ns, it delivers low conduction loss and controlled reverse recovery-critical for maintaining efficiency and minimizing EMI in high-frequency synchronous rectifiers. Its logic-level gate also simplifies drive circuitry.

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 21 A (per Table 2, "Maximum ratings"). This derating reflects thermal limits of the DPAK package and must be validated against actual PCB layout and ambient conditions using R_thJC = 4.9 K/W.

Does IPS135N03LGAKMA1 have built-in ESD protection?

No. The datasheet does not specify on-chip ESD protection diodes. External TVS or RC filtering is recommended on gate and drain lines in systems exposed to human handling or transient environments, especially given its sensitive gate oxide (V_GS max = ±20 V).

Can this MOSFET replace IPS135N03LG in existing designs?

Yes. IPS135N03LGAKMA1 is the qualified, RoHS-compliant, halogen-free revision of IPS135N03LG (same electrical specs, package, and marking). It maintains full form-fit-function compatibility and is intended as a direct replacement for new production and legacy design refreshes.

IPS135N03LGAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-11

IPS135N03LGAKMA1 FAQ

1.How can I place an order for IPS135N03LGAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS135N03LGAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS135N03LGAKMA1 reliable?

The price and inventory of IPS135N03LGAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS135N03LGAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS135N03LGAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS135N03LGAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS135N03LGAKMA1?

IPS135N03LGAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS135N03LGAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS135N03LGAKMA1?

For technical support, including IPS135N03LGAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS135N03LGAKMA1 requirements.

6.How does Aetrix verify that IPS135N03LGAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS135N03LGAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS135N03LGAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS135N03LGAKMA1?

All IPS135N03LGAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS135N03LGAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS135N03LGAKMA1 part is unused and in its original packaging.

Return procedure for IPS135N03LGAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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