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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS13N03LA G

Name: IPS13N03LA G
Brand: Infineon Technologies
SKU: IPS13N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPS13N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: IPS13N03LA G.pdf

Description:: MOSFET N-CH 25V 30A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPS13N03LA G from Infineon Technologies is a 25 V, 30 A N-channel logic-level OptiMOS®2 power MOSFET in PG-TO251-3-11 package, featuring 12.8 mΩ R_DS(on) at V_GS = 10 V and 3.2 K/W thermal resistance (junction-to-case), optimized for high-frequency DC/DC converters and synchronous rectification.

For engineers reviewing the IPS13N03LA G datasheet, IPS13N03LA G pinout, IPS13N03LA G application, or IPS13N03LA G equivalent, key selection criteria include gate charge (Q_g = 6.3–8.3 nC), reverse diode forward voltage (V_SD = 0.95–1.2 V), avalanche energy (E_AS = 60 mJ), and 175 °C maximum junction temperature.

Technical Context

This device implements a planar silicon MOSFET architecture with optimized cell pitch and trench-free design to achieve low gate charge × R_DS(on) figure-of-merit (FOM) of ~82 nC·mΩ. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

Thermal performance is enhanced by low R_thJC (3.2 K/W) and robust 175 °C operation, supporting high-power density designs where PCB copper area is constrained. The integrated body diode exhibits fast recovery (Q_rr ≤ 10 nC) and high dv/dt immunity (6 kV/µs).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V logic-level gate drive.
R_DS(on) max	12.8 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 30 A, critical for high-efficiency buck converters.
Q_g	6.3–8.3 nC - Low total gate charge reduces switching losses and driver power requirements in MHz-range topologies.
E_AS	60 mJ (I_D = 24 A, R_GS = 25 Ω) - Robust single-pulse avalanche capability supports inductive load switching without external snubbers.
V_SD	0.95–1.2 V at I_F = 30 A, T_j = 25 °C - Low forward drop minimizes conduction loss in synchronous rectifier mode.
R_thJC	3.2 K/W - Enables >40 W power dissipation with modest heatsinking, suitable for compact industrial SMPS modules.
dv/dt rating	6 kV/µs - High immunity to parasitic turn-on in hard-switched or phase-shifted full-bridge applications.

Pinout & Package

IPS13N03LA G uses the PG-TO251-3-11 package - a surface-mount variant of TO-251 with isolated leadframe, 3-terminal configuration, and drain-connected tab for thermal and electrical connection via PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current during conduction.
Pin 2 (Gate)	Control terminal	High-impedance MOSFET gate; requires <8.3 nC charge for full enhancement; sensitive to ESD (±20 V absolute max).
Pin 3 (Drain)	Power output terminal	Connected internally to exposed metal tab; must be soldered to ≥6 cm² copper area for thermal management per JEDEC standards.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, enabling direct interface with microcontrollers and PWM ICs without gate drivers.
Optimized FOM	Q_g × R_DS(on) ≈ 82 nC·mΩ - balances switching and conduction losses for peak efficiency in 300 kHz–2 MHz converters.
175 °C operation	Rated continuous operation up to 175 °C junction temperature - supports sealed or high-ambient environments like automotive under-hood DC/DC.
Robust body diode	Q_rr ≤ 10 nC and 6 kV/µs dv/dt rating - reduces ringing and cross-conduction risk in synchronous rectifier and half-bridge configurations.
Pb-free & RoHS	Lead-free plating compliant with RoHS Directive 2011/65/EU - meets environmental requirements for industrial and consumer electronics.

Applications

Server VRM

Industrial SMPS

Use Scenario: Point-of-load (POL) converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in 300–600 kHz buck stage, replacing Schottky diodes to reduce heat and improve efficiency.

Use Value: 12.8 mΩ R_DS(on) cuts conduction loss by >50% vs. 40 mΩ alternatives, enabling 94%+ efficiency at 30 A output.

Use Scenario: 24 V input, 5 V/20 A output industrial DC/DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology operating at 250 kHz with tight thermal constraints.

Use Value: 3.2 K/W R_thJC allows full 30 A rating on standard FR4 with 6 cm² copper, eliminating need for external heatsinks.

Automotive DC/DC

USB-C PD Adapter

Use Scenario: 12 V to 5 V/3 A auxiliary supply in ADAS camera ECU with ambient up to 105 °C.

IC Role / Device Role / Timing Role: Low-side switch in buck controller with integrated gate driver, operating continuously at 175 °C junction.

Use Value: 175 °C rated junction enables derating margin for long-term reliability in unventilated enclosures.

Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD adapter using QR flyback topology.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low Q_g support zero-voltage switching (ZVS) at 100–150 kHz.

Use Value: Q_rr ≤ 10 nC and 6.3–8.3 nC Q_g reduce switching loss and EMI, meeting CISPR-32 Class B limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD13N03LA G	PG-TO252-3-11 package; R_thJC = 3.2 K/W; identical die but different leadframe and mounting footprint.	Requires larger PCB pad layout; better suited for through-hole-compatible reflow or higher mechanical stress environments.	Select when board space permits larger outline and thermal path relies more on case conduction than PCB copper area.
BSC014N04LS	40 V rating; R_DS(on) = 1.4 mΩ @ 10 V; Q_g = 22 nC; same PG-TO251-3-11 package.	Higher voltage margin but higher gate charge increases switching loss above 500 kHz; not logic-level (V_GS(th) = 1.8–2.8 V).	Prefer only if system requires >25 V blocking or dual-voltage compatibility; avoid in 3.3 V-driven designs due to marginal V_GS(th) margin.

Compared with IPD13N03LA G, IPS13N03LA G offers identical electrical specs in a smaller PG-TO251 footprint, while BSC014N04LS trades lower R_DS(on) for higher Q_g and reduced logic-level compatibility-making IPS13N03LA G optimal for space-constrained, high-frequency, low-voltage synchronous rectifiers.

Availability

IPS13N03LA G is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS modules, automotive DC/DC converters, and USB-C PD adapters requiring stable component supply across multi-year production cycles.

Supply support for IPS13N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFET and SiC technology.

This part belongs to the OptiMOS®2 product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space- and thermally-constrained applications such as computing power supplies and automotive subsystems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D is 30 A at T_C = 100 °C, limited by bondwire capacity-not thermal resistance-as confirmed in the Absolute Maximum Ratings table. This rating assumes adequate PCB copper area (≥6 cm²) and still-air conditions per JEDEC standards.

Can IPS13N03LA G be used as a synchronous rectifier with 3.3 V gate drive?

Yes. With V_GS(th) ranging from 1.2 V to 2.0 V and R_DS(on) = 17.5–21.9 mΩ at V_GS = 4.5 V, the device achieves full enhancement at 3.3 V gate drive in most practical layouts. Measured transfer characteristics show usable I_D > 20 A at V_GS = 3.3 V and T_j = 25 °C.

What is the recommended PCB layout for thermal performance?

Mount the device on a vertical FR4 PCB with 6 cm² of 70 µm-thick copper connected to the drain tab. Use thermal vias beneath the tab to inner-layer copper planes if multilayer. Avoid isolation gaps near the drain pad-minimum 0.5 mm clearance to other traces per IPC-2221B.

Does this MOSFET have avalanche ruggedness rated for repetitive operation?

No. The datasheet specifies only single-pulse avalanche energy (E_AS = 60 mJ). Repetitive avalanche is not characterized or guaranteed. Designers must ensure SOA compliance and avoid operation beyond the safe operating area curves shown on page 4, particularly under inductive switching conditions.

IPS13N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1043 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 46W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-11

IPS13N03LA G FAQ

1.How can I place an order for IPS13N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS13N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS13N03LA G reliable?

The price and inventory of IPS13N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS13N03LA G is usually 5 days.

3.What payment methods are accepted for IPS13N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS13N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS13N03LA G?

IPS13N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS13N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS13N03LA G?

For technical support, including IPS13N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS13N03LA G requirements.

6.How does Aetrix verify that IPS13N03LA G is sourced from the original manufacturer or authorized distributors?

All IPS13N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS13N03LA G meets industry standards.

7.What is the process for return or replacement of IPS13N03LA G?

All IPS13N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPS13N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS13N03LA G part is unused and in its original packaging.

Return procedure for IPS13N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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