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Infineon Technologies IPS20N03L G

Part No.:
IPS20N03L G
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Stub Leads, IPAK
Datasheet:
AetrixIPS20N03L G.pdf
Description:
MOSFET N-CH 30V 30A TO251-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,331

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Product details

Overview

IPS20N03L G from Infineon Technologies is an N-channel enhancement-mode MOSFET in TO-251-3 (IPAK) package, rated for 30 V VDS, 30 A continuous drain current at TC = 25 °C, and RDS(on) ≤ 12 mΩ at VGS = 10 V. It serves as a low-side power switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IPS20N03L G datasheet, IPS20N03L G pinout, IPS20N03L G application, or IPS20N03L G equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) max 2.5 V), low conduction loss at 10 V gate bias, thermal performance in surface-mount TO-251, and suitability for high-current switching in industrial power supplies.

Technical Context

This MOSFET employs trench-stop technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 24 nC typ). Its body diode exhibits reverse recovery time trr = 45 ns and Qrr = 35 nC, enabling efficient synchronous rectification.

The device features avalanche-rated ruggedness (EAS = 170 mJ at TJ = 25 °C), integrated ESD protection (HBM Class 2), and operates across junction temperature range –55 °C to 175 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage before breakdown; supports 24 V rail systems with margin.
ID (continuous)30 A at TC = 25 °C - Sustains high load current with TO-251 thermal pad soldered to PCB copper.
RDS(on)≤12 mΩ at VGS = 10 V - Enables <1 W conduction loss at 30 A, reducing heatsink requirements.
VGS(th)1.0–2.5 V - Fully enhances with standard 3.3 V or 5 V logic-level drivers without gate boosters.
Qg24 nC typ - Determines gate driver power and switching speed; enables ~100 kHz operation with moderate driver strength.
trr45 ns - Limits reverse recovery losses during hard-switching; critical for synchronous buck efficiency.

Pinout & Package

IPS20N03L G uses the TO-251-3 (IPAK) surface-mount package with exposed drain pad for thermal dissipation. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate terminalControls channel conduction; requires 10 V for full enhancement, compatible with microcontroller GPIOs via level-shifting.
Pin 2 (D)Drain terminal / thermal padHigh-current output node; tab is electrically connected to drain and must be soldered to PCB ground plane for thermal management.
Pin 3 (S)Source terminalReference node for gate drive; connects to system ground or low-side shunt resistor for current sensing.

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) max 2.5 V enables direct interface with 3.3 V/5 V controllers without external level shifters.
Avalanche energy ratingEAS = 170 mJ ensures robustness against inductive switching transients in motor and relay loads.
Fast body diodetrr = 45 ns and Qrr = 35 nC reduce switching losses in synchronous rectifier topologies.
Thermally enhanced packageTO-251-3 IPAK with exposed drain pad delivers RθJA ≈ 50 K/W on 2-layer 1-in² copper, improving power density.

Applications

DC-DC ConvertersMotor Drive Half-Bridge

Use Scenario: 12–24 V input buck converter delivering up to 25 A to FPGA or ASIC core rails.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diodes to improve efficiency above 90%.

Use Value: 12 mΩ RDS(on) reduces conduction loss by >60% vs. 40 V Schottky, lowering thermal stress on PCB.

Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated with complementary high-side driver.

Use Value: Fast trr minimizes shoot-through risk during dead-time transitions, improving reliability.

Industrial Power SuppliesLED Driver Circuits

Use Scenario: Secondary-side OR-ing circuit in redundant 24 V AC/DC power modules.

IC Role / Device Role / Timing Role: Ideal diode replacement for hot-swap and redundancy applications.

Use Value: Low RDS(on) cuts forward voltage drop to <300 mV at 20 A, eliminating heat sink and fan requirements.

Use Scenario: Constant-current LED string driver with analog dimming in commercial lighting fixtures.

IC Role / Device Role / Timing Role: High-current PWM switch controlling LED current path in buck-based driver topology.

Use Value: Avalanche rating protects against inductive kickback from long LED cable runs during fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP30NF03LRDS(on) = 14 mΩ (typ), Qg = 27 nC - slightly higher conduction and switching loss.Same TO-220 package; lacks TO-251 surface-mount form factor and thermal pad integration.Prefer when through-hole assembly or legacy board layout mandates TO-220 footprint.
IRLZ34NPBFRDS(on) = 28 mΩ (max), VGS(th) = 1.0–2.0 V - higher on-resistance but tighter threshold spread.TO-220AB package; no exposed thermal pad - limits sustained current capability above 15 A.Choose where ultra-low gate threshold consistency matters more than conduction loss, e.g., battery-powered sensor nodes.

Compared with STP30NF03L and IRLZ34NPBF, IPS20N03L G delivers superior thermal performance via TO-251's integrated drain pad and lowest RDS(on), making it optimal for space-constrained, high-current industrial power stages requiring surface-mount reliability.

Availability

IPS20N03L G is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and industrial power supplies requiring stable component supply and long-term production continuity.

Supply support for IPS20N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions.

The IPS20N03L G belongs to Infineon's OptiMOS™ 30 V family, engineered for high-efficiency, high-current switching in compact industrial and embedded power systems.

FAQ

What is the maximum pulsed drain current (IDM) for IPS20N03L G?

The maximum pulsed drain current is 120 A, specified at TJ = 25 °C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating supports short-duration surge events such as motor startup or capacitor charging, provided PCB thermal design maintains junction temperature within limits.

Does IPS20N03L G require a gate resistor for stability?

A gate resistor of 10–47 Ω is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on. The device's 24 nC gate charge and low input capacitance (Ciss = 1,450 pF) make it sensitive to fast edge rates; proper gate resistance ensures reliable switching without oscillation.

Can IPS20N03L G be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) enables inherent current sharing. For two devices in parallel, ensure matched gate drive paths, symmetrical PCB layout, and shared thermal mass under the drain pads to maintain balanced conduction and avoid thermal runaway.

Is IPS20N03L G RoHS-compliant and halogen-free?

Yes - IPS20N03L G meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The TO-251-3 package uses lead-free matte tin plating and green molding compound, supporting environmentally compliant manufacturing.

IPS20N03L G Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-251-3 Stub Leads, IPAK
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO251-3-11

IPS20N03L G FAQ

1.How can I place an order for IPS20N03L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS20N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS20N03L G reliable?

The price and inventory of IPS20N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS20N03L G is usually 5 days.

3.What payment methods are accepted for IPS20N03L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS20N03L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS20N03L G?

IPS20N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS20N03L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS20N03L G?

For technical support, including IPS20N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS20N03L G requirements.

6.How does Aetrix verify that IPS20N03L G is sourced from the original manufacturer or authorized distributors?

All IPS20N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS20N03L G meets industry standards.

7.What is the process for return or replacement of IPS20N03L G?

All IPS20N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPS20N03L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS20N03L G part is unused and in its original packaging.

Return procedure for IPS20N03L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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