Infineon Technologies IPS60R1K5CEAKMA1
- Part No.:
- IPS60R1K5CEAKMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IPS60R1K5CEAKMA1.pdf
- Description:
- CONSUMER
- Quantity:
- Payment:

- Shipping:

Inventory:6,368
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Product details
Overview
IPS60R1K5CEAKMA1 from Infineon Technologies is a 600 V, 1.5 Ω RDS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK SL) package, featuring 9.4 nC total gate charge, 1 µJ Eoss at 400 V, and 5 A continuous drain current. It serves as a high-efficiency, cost-optimized switching device in PFC and hard-switching PWM stages for consumer lighting and AC-DC adapters.
For engineers reviewing the IPS60R1K5CEAKMA1 datasheet, IPS60R1K5CEAKMA1 pinout, IPS60R1K5CEAKMA1 application, or IPS60R1K5CEAKMA1 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), high commutation ruggedness (500 A/µs di/dt), and gate-drive simplicity with 5.4 V plateau voltage - critical for stable operation in resonant and quasi-resonant topologies.
Technical Context
This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking (600 V) with significantly reduced conduction and switching losses versus planar MOSFETs. Its optimized charge distribution yields low Ciss (200 pF), low Coss (16 pF), and energy-related Co(er) of 11 pF - directly supporting high-frequency, high-efficiency SMPS designs.
The MOSFET exhibits robust unclamped inductive switching capability (EAS = 26 mJ at Tj = 25°C) and high dv/dt immunity (50 V/ns), validated under hard-switching conditions. Its reverse diode delivers 230 ns trr and 1.1 µC Qrr, enabling reliable operation in totem-pole PFC without external SiC diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - rated blocking voltage for universal-input offline SMPS up to 400 V DC bus |
| RDS(on) | 1.50 Ω max @ Tj = 150°C - enables low conduction loss in 5 A continuous PFC boost stages |
| Qg | 9.4 nC typ - reduces gate drive power and simplifies driver selection for 65–100 kHz operation |
| Eoss | 1 µJ @ 400 V - minimizes turn-off loss in hard-switched converters and improves light-load efficiency |
| tr/tf | 7 ns / 20 ns - supports fast switching with controlled EMI in compact adapter designs |
| di/dt ruggedness | 500 A/µs - ensures reliable commutation in high-dI/dt resonant and LLC circuits |
| Tj max | 150 °C - allows operation in thermally constrained consumer enclosures without derating |
Pinout & Package
IPS60R1K5CEAKMA1 uses the PG-TO251 (IPAK SL) package with exposed drain tab for thermal enhancement. The leadframe design features gull-wing leads and a solderable metal tab on the underside for PCB heat sinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; 14 Ω internal gate resistance limits ringing |
| Pin 2 (Drain) + Tab | High-side power terminal | Electrically connected to exposed metal tab - must be isolated from heatsink unless referenced to primary ground |
| Pin 3 (Source) | Reference node | Serves as return path for gate drive and load current; connects to primary-side ground in flyback/PFC |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low FOM (RDS(on) × Qg) | 14.1 Ω·nC - enables >93% efficiency in 65 W adapter PFC stage at 100 kHz |
| High commutation ruggedness | 500 A/µs di/dt rating - eliminates need for snubbers in high-frequency totem-pole PFC |
| Easy gate drive | 5.4 V gate plateau voltage - ensures stable Miller region control with standard 12 V drivers |
| Pb-free & halogen-free | RoHS-compliant plating and mold compound - meets IEC 61249-2-21 and JEDEC J-STD-020 |
| Standard-grade qualification | Rated for Tj = –40 to 150 °C - suitable for indoor lighting and consumer electronics without automotive stress screening |
Applications
| LED Driver Power Stage | PC Silverbox PFC Boost |
|---|---|
|
Use Scenario: Constant-current LED driver for indoor architectural lighting operating from 85–265 V AC input. IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) boost PFC stage. Use Value: Low RDS(on) and Eoss reduce thermal load in sealed fixtures; 150 °C Tj rating avoids derating in ambient temperatures up to 70 °C. |
Use Scenario: Active PFC front-end in desktop PC power supplies meeting 80 PLUS Bronze efficiency requirements. IC Role / Device Role / Timing Role: High-side switch in 65 kHz CCM boost converter delivering 350 W output. Use Value: 9.4 nC Qg enables use of low-cost bipolar gate drivers; 50 V/ns dv/dt immunity prevents false triggering during line transients. |
| LCD TV Backlight Inverter | USB-C PD Adapter |
|
Use Scenario: Resonant half-bridge inverter powering CCFL or edge-lit LED backlights in 32–55 inch LCD TVs. IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter operating at 250–500 kHz. Use Value: 200 pF Ciss and 11 pF Co(er) minimize dead-time losses; 230 ns trr ensures clean zero-voltage switching transitions. |
Use Scenario: Primary-side switch in 65 W GaN-assisted USB-C PD adapter with active clamp flyback topology. IC Role / Device Role / Timing Role: Clamp switch handling 400 V DC link voltage and 1.4 A peak current. Use Value: 1.5 Ω RDS(on) at 150 °C maintains <1.2 W conduction loss; 26 mJ EAS withstands clamping energy surges without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60N1F6 | RDS(on) = 1.2 Ω (typ), Qg = 12.5 nC, TO-220 package | Higher gate charge increases driver loss; larger TO-220 footprint limits board density | Prefer when higher pulse current (60 A) and legacy footprint compatibility are required |
| FDPF15N60 | RDS(on) = 1.4 Ω (max), Qg = 11.5 nC, TO-220FP package | Lower thermal resistance (RthJC = 1.5 °C/W) but no exposed drain tab for secondary-side isolation | Prefer when lower junction-to-case thermal resistance is prioritized over PCB isolation flexibility |
Compared with STP60N1F6 and FDPF15N60, IPS60R1K5CEAKMA1 offers superior FOM (14.1 vs. 15.0 and 16.1 Ω·nC), smaller IPAK SL footprint, and integrated drain-tab isolation - making it optimal for space-constrained, high-efficiency consumer power supplies where gate drive simplicity and thermal management are co-critical.
Availability
IPS60R1K5CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC boost circuits, LCD TV backlight inverters, and USB-C PD adapters requiring stable component supply across production ramp and long-term maintenance cycles.
Supply support for IPS60R1K5CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.
This part belongs to the CoolMOS™ CE family - engineered for cost-sensitive, high-efficiency AC-DC conversion in consumer and lighting applications, balancing performance, ease of use, and manufacturability without automotive-grade overhead.
FAQ
What is the maximum recommended gate resistor value for IPS60R1K5CEAKMA1 in a 100 kHz PFC application?
The datasheet specifies 12.2 Ω gate resistor for dynamic timing measurements at 100 kHz. For stable operation with minimal overshoot, a 10–15 Ω non-inductive SMD resistor is recommended. Values above 22 Ω increase switching time and conduction loss; below 5 Ω risk gate oscillation due to 14 Ω intrinsic RG and PCB inductance.
Can IPS60R1K5CEAKMA1 be paralleled in a high-power PFC design?
Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each device's gate line to suppress high-frequency oscillation. The datasheet explicitly recommends this for paralleling, as mismatched threshold voltage (2.5–3.5 V) and dynamic parameters can cause current imbalance without individual gate damping.
Does IPS60R1K5CEAKMA1 require a negative gate turn-off voltage?
No. The device is rated for ±30 V dynamic gate-source voltage and operates reliably with 0 V to +12 V gate drive. Negative turn-off (e.g., –5 V) is unnecessary and not recommended - the 5.4 V gate plateau and low Qgd/Qgs ratio ensure clean turn-off with zero-volt gate discharge.
What is the thermal resistance from junction to case (RthJC) for IPS60R1K5CEAKMA1?
RthJC is 2.57 °C/W, measured from junction to the exposed drain tab surface. This value assumes full-surface soldering of the tab to a 1-in² 2-oz copper pad with thermal vias. PCB layout directly impacts real-world thermal performance - insufficient copper area increases effective RthJC by up to 40%.
IPS60R1K5CEAKMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ CE
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 49W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO251-3
IPS60R1K5CEAKMA1 FAQ
1.How can I place an order for IPS60R1K5CEAKMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPS60R1K5CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPS60R1K5CEAKMA1 reliable?
The price and inventory of IPS60R1K5CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS60R1K5CEAKMA1 is usually 5 days.
3.What payment methods are accepted for IPS60R1K5CEAKMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS60R1K5CEAKMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPS60R1K5CEAKMA1?
IPS60R1K5CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPS60R1K5CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPS60R1K5CEAKMA1?
For technical support, including IPS60R1K5CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS60R1K5CEAKMA1 requirements.
6.How does Aetrix verify that IPS60R1K5CEAKMA1 is sourced from the original manufacturer or authorized distributors?
All IPS60R1K5CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS60R1K5CEAKMA1 meets industry standards.
7.What is the process for return or replacement of IPS60R1K5CEAKMA1?
All IPS60R1K5CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS60R1K5CEAKMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPS60R1K5CEAKMA1 part is unused and in its original packaging.
Return procedure for IPS60R1K5CEAKMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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