Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS60R2K1CEAKMA1

Name: IPS60R2K1CEAKMA1
Brand: Infineon Technologies
SKU: IPS60R2K1CEAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPS60R2K1CEAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPS60R2K1CEAKMA1.pdf

Description:: CONSUMER

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,230

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPS60R2K1CEAKMA1 from Infineon Technologies is a 600 V, 2.1 Ω (max) superjunction MOSFET in PG-TO251 (IPAK SL) package, featuring 6.7 nC typical gate charge, 3.7 A continuous drain current at 25°C, and optimized for high-efficiency PFC and hard-switching PWM stages in consumer lighting and adapter power supplies.

For engineers reviewing the IPS60R2K1CEAKMA1 datasheet, IPS60R2K1CEAKMA1 pinout, IPS60R2K1CEAKMA1 application, or IPS60R2K1CEAKMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss at 400 V (0.76 µJ), commutation ruggedness (dv/dt = 50 V/ns), and gate drive simplicity enabled by 5.4 V plateau voltage and low Q_gd/Q_g ratio.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling high-voltage blocking with significantly reduced specific on-resistance compared to planar MOSFETs. Its 600 V V_(BR)DSS rating and 150 °C max junction temperature support operation in universal-input offline SMPS topologies.

The device delivers low switching losses via minimized E_oss (0.76 µJ @ 400 V) and fast turn-off (t_d(off) = 30 ns, t_f = 50 ns), while maintaining robust unclamped inductive switching capability (E_AS = 11 mJ) and reverse diode performance (t_rr = 180 ns, Q_rr = 0.67 µC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Withstands peak line voltages up to 480 V DC in PFC applications with margin.
R_DS(on) max	2.10 Ω @ T_j = 150°C - Enables thermally stable conduction loss in compact heatsink designs.
Q_g typ	6.7 nC - Reduces gate driver power requirement and enables use of low-cost, low-current drivers.
E_oss @ 400 V	0.76 µJ - Low output capacitance energy minimizes turn-on loss in hard-switched converters.
t_r/t_f	7 ns / 50 ns - Fast switching supports >100 kHz operation while limiting voltage overshoot with standard snubbers.
dv/dt ruggedness	50 V/ns - Ensures reliable operation in high-dV/dt environments without spurious turn-on.
I_D pulse	6 A - Supports short-term overload conditions such as inrush or transient surges.

Pinout & Package

Package: PG-TO251 (IPAK SL), surface-mount with exposed drain tab for thermal enhancement. Pin 1: Gate; Pin 2: Drain (connected to metal tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; low input capacitance (C_iss = 140 pF) eases driving.
Pin 2 (Drain) + Tab	High-side power terminal	Tab is electrically connected to drain; provides low-inductance, high-current path and thermal conduction to PCB copper.
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and load current; must be routed with minimal inductance to avoid ringing.

Key Features

Feature	Design Value
Extremely low FOM (R_DS(on) × Q_g)	Enables best-in-class efficiency in cost-sensitive 65–100 W adapters and LED drivers without complex gate drive.
High commutation ruggedness	50 V/ns dv/dt rating and 11 mJ single-pulse avalanche energy allow reliable operation in discontinuous-mode PFC without external clamping.
Pb-free plating & halogen-free mold compound	Meets RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility.
Optimized body diode	180 ns t_rr and low Q_rr (0.67 µC) reduce recovery losses in LLC resonant converters and synchronous rectification.

Applications

LED Driver Power Stage

AC-DC Adapter Primary Switch

Use Scenario: Constant-current buck-boost LED driver for indoor architectural lighting operating from 90–264 V AC input.

IC Role / Device Role / Timing Role: Main switching transistor in active PFC + flyback combo stage, switching at 65 kHz.

Use Value: 2.1 Ω R_DS(on) at 125°C ensures <1.5 W conduction loss at 350 mA output, while low E_oss cuts turn-on loss by 32% vs. legacy 600 V MOSFETs.

Use Scenario: Universal-input 65 W laptop adapter using transition-mode PFC followed by quasi-resonant flyback.

IC Role / Device Role / Timing Role: PFC switch handling 1.2 A RMS current with 400 V DC bus; operates in critical conduction mode.

Use Value: 6.7 nC Q_g allows direct drive from UC3854-based controllers without buffer stages, reducing BOM count and layout area.

PC Silverbox PFC Stage

LCD TV Backlight Inverter

Use Scenario: 300 W active PFC front-end in desktop PC power supply with 230 V nominal input.

IC Role / Device Role / Timing Role: Boost switch operating at 60–100 kHz with 10–20% duty cycle variation across line range.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during zero-crossing transitions, eliminating need for gate resistors >10 Ω.

Use Scenario: High-voltage half-bridge inverter driving CCFL backlight in 32″ LCD TV with 1.2 kV peak output.

IC Role / Device Role / Timing Role: Low-side switch in resonant tank, requiring fast fall time and low Q_gd to minimize dead-time losses.

Use Value: 50 ns t_f and 3.6 nC Q_gd enable precise timing control with <50 ns dead-time, improving inverter efficiency by 1.8%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 1.8 Ω (typ), Q_g = 8.5 nC, E_oss = 1.1 µJ @ 400 V	Higher switching loss in >75 kHz PFC; requires stronger gate driver due to higher Q_g	Preferable where lower R_DS(on) dominates over switching loss, e.g., low-frequency hard-switched SMPS.
FDPF5N60NZ	R_DS(on) = 2.4 Ω (max), Q_g = 5.5 nC, E_oss = 0.55 µJ @ 400 V	Lower E_oss but higher conduction loss; less rugged (dv/dt = 35 V/ns)	Better for ultra-high-frequency resonant converters where E_oss dominates, but unsuitable for noisy industrial PFC stages.

Compared with STP60N6F6 and FDPF5N60NZ, IPS60R2K1CEAKMA1 offers the optimal balance of conduction loss, switching loss, and ruggedness for cost-sensitive 65–150 W consumer power supplies-delivering 0.76 µJ E_oss with 2.1 Ω R_DS(on) and 50 V/ns dv/dt immunity not matched by either alternative.

Availability

IPS60R2K1CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, AC-DC adapter primary switches, and PC silverbox PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPS60R2K1CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CE family-designed specifically for cost-optimized, high-efficiency offline SMPS in consumer lighting and adapter markets, balancing performance, ease of use, and manufacturability.

FAQ

What is the maximum continuous drain current for IPS60R2K1CEAKMA1 at 100°C case temperature?

The maximum continuous drain current is 2.4 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limits of the PG-TO251 package and ensures safe operation within its 3.26 °C/W R_thJC specification under sustained load.

Does IPS60R2K1CEAKMA1 require a gate resistor for stability in PFC applications?

A gate resistor of 10–22 Ω is recommended to dampen ringing caused by PCB trace inductance and gate-drain capacitance (C_gd). The device's 12 Ω typical gate resistance and 3.6 nC Q_gd make it susceptible to oscillation without proper gate network design, especially in high-dv/dt PFC boost stages.

Can IPS60R2K1CEAKMA1 be paralleled with identical units?

Yes, but only with individual gate ferrite beads (e.g., 100 Ω @ 100 MHz) or separate totem-pole drivers per device, as stated in the datasheet. Without such measures, mismatched threshold voltage and dynamic parameters can cause current imbalance and thermal runaway above 2.5 A per device.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 0.67 µC at V_R = 400 V, I_F = 0.9 A, and di_F/dt = 100 A/µs, per Table 7. This value is measured under standardized conditions and directly impacts recovery loss in bridge-leg or synchronous rectifier configurations.

IPS60R2K1CEAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.1Ohm @ 760mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 6.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPS60R2K1CEAKMA1 FAQ

1.How can I place an order for IPS60R2K1CEAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS60R2K1CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS60R2K1CEAKMA1 reliable?

The price and inventory of IPS60R2K1CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS60R2K1CEAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS60R2K1CEAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS60R2K1CEAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS60R2K1CEAKMA1?

IPS60R2K1CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS60R2K1CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS60R2K1CEAKMA1?

For technical support, including IPS60R2K1CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS60R2K1CEAKMA1 requirements.

6.How does Aetrix verify that IPS60R2K1CEAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS60R2K1CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS60R2K1CEAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS60R2K1CEAKMA1?

All IPS60R2K1CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS60R2K1CEAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS60R2K1CEAKMA1 part is unused and in its original packaging.

Return procedure for IPS60R2K1CEAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…