Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS60R3K4CEAKMA1

Name: IPS60R3K4CEAKMA1
Brand: Infineon Technologies
SKU: IPS60R3K4CEAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPS60R3K4CEAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPS60R3K4CEAKMA1.pdf

Description:: CONSUMER

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,359

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPS60R3K4CEAKMA1 from Infineon Technologies is a 600 V, 3.4 Ω (max), 2.6 A continuous drain current CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK) package, optimized for cost-sensitive PFC and hard-switching SMPS stages in lighting and adapter applications.

For engineers reviewing the IPS60R3K4CEAKMA1 datasheet, IPS60R3K4CEAKMA1 pinout, IPS60R3K4CEAKMA1 application, or IPS60R3K4CEAKMA1 equivalent, key selection criteria include R_DS(on) at 150°C, E_oss @ 400 V, gate charge Q_g, diode reverse recovery performance, and thermal resistance R_thJC.

Technical Context

This device implements Infineon's CoolMOS™ CE superjunction architecture with optimized charge balance for low conduction and switching losses. Its 4.6 nC total gate charge and 0.57 µJ output energy (E_oss) enable high-frequency operation up to 100 kHz in critical conduction mode (CRM) PFC.

The MOSFET features a robust body diode with 160 ns reverse recovery time and 0.42 µC Q_rr, supporting reliable commutation in discontinuous and quasi-resonant topologies. Its 50 V/ns dv/dt ruggedness ensures stable operation under fast voltage transients without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands 400 V DC bus plus 20% margin in offline SMPS input stages
R_DS(on), max	3.40 Ω @ T_j = 150°C - Enables thermally stable 2.6 A continuous conduction at 100°C case temperature
Q_g, typ	4.6 nC - Reduces gate drive power loss and allows use of low-cost 100 mA gate drivers
E_oss @ 400 V	0.57 µJ - Low stored output capacitance energy minimizes switching loss during hard-switched turn-off
dv/dt ruggedness	50 V/ns - Prevents false triggering in high-dV/dt environments such as boost PFC outputs
R_thJC	4.26 °C/W - Supports 29 W power dissipation with modest heatsinking on PCB copper area
Q_rr	0.42 µC - Limits diode recovery loss and EMI generation in flyback and LLC resonant converters

Pinout & Package

IPS60R3K4CEAKMA1 uses the PG-TO251 (IPAK) surface-mount package with exposed drain tab for thermal enhancement. The package has three terminals: Gate (Pin 1), Drain (Pin 2 + metal tab), Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ≤20 V static/30 V dynamic gate-source voltage; low 15 Ω internal gate resistance simplifies driver design
Pin 2 + Tab	Drain	Main high-voltage power terminal; metal tab provides low-inductance, high-current path and primary thermal conduction to PCB copper
Pin 3	Source	Reference node for gate drive and current sensing; connects to power ground or source resistor for overcurrent protection

Key Features

Feature	Design Value
Superjunction structure	Enables 600 V rating with R_DS(on) × Q_g figure-of-merit < 15.6 Ω·nC - balances efficiency and ease of drive
Low E_oss	0.57 µJ @ 400 V - reduces turn-off loss by ~35% vs. prior-generation 600 V MOSFETs at 65 kHz
High commutation ruggedness	6 mJ single-pulse avalanche energy - withstands transient overvoltage during startup or overload without failure
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets industrial and consumer environmental compliance requirements
Standard grade qualification	Rated for T_j = –40°C to 150°C - suitable for enclosed lighting fixtures and compact adapters without active cooling

Applications

LED Driver Power Stage

AC-DC Adapter Primary Switch

Use Scenario: 60–100 W isolated flyback converter powering indoor LED luminaires with universal AC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating in DCM/QR mode at 65–100 kHz.

Use Value: Low Q_g and E_oss reduce no-load consumption and improve full-load efficiency >90% at 230 V AC.

Use Scenario: 36 W USB-C PD adapter with active clamp flyback or asymmetrical half-bridge topology.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC link in high-frequency PWM stage.

Use Value: 3.4 Ω R_DS(on) at 150°C enables compact thermal design without derating at ambient >50°C.

PFC Boost Stage

LCD TV Power Supply

Use Scenario: 150–200 W critical conduction mode (CRM) boost PFC front-end for commercial lighting systems.

IC Role / Device Role / Timing Role: Fast-switching boost switch with body diode conducting during zero-current intervals.

Use Value: 160 ns t_rr and 0.42 µC Q_rr minimize diode recovery loss and audible noise in CRM operation.

Use Scenario: Main SMPS stage in 32-inch LCD TV power board delivering 12 V/5 V rails from 380 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in forward or half-bridge configuration.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during rapid bus voltage transitions across transformer leakage inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N3LLH6	R_DS(on) = 3.3 Ω (typ), Q_g = 5.8 nC, E_oss = 0.72 µJ - higher switching loss, lower conduction loss	Requires stronger gate driver due to higher Q_g; better suited for lower-frequency (<50 kHz), higher-current designs	Prefer when thermal budget favors lower R_DS(on) over switching loss, e.g., in fixed-frequency CCM PFC
FDPF5N60NZ	R_DS(on) = 3.6 Ω (max), Q_g = 4.2 nC, E_oss = 0.65 µJ - slightly lower gate charge but higher R_DS(on)	Marginally lower gate drive loss but higher conduction loss above 1.5 A RMS; less robust dv/dt rating (35 V/ns)	Acceptable where cost is primary constraint and dv/dt stress is low, e.g., non-isolated buck converters

Compared with STP60N3LLH6 and FDPF5N60NZ, IPS60R3K4CEAKMA1 delivers the best balance of low E_oss, moderate R_DS(on), and high dv/dt immunity - making it optimal for high-efficiency, high-density CRM PFC and QR flyback designs where both switching and conduction losses must be minimized.

Availability

IPS60R3K4CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, AC-DC adapter primary switches, and PFC boost stages requiring stable component supply and long-term industrial availability.

Supply support for IPS60R3K4CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CE superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency offline power conversion in consumer lighting and adapter applications.

FAQ

What is the maximum continuous drain current for IPS60R3K4CEAKMA1 at 100°C case temperature?

The maximum continuous drain current is 1.6 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating from the 2.6 A value at 25°C case temperature, ensuring safe operation within the 150°C maximum junction temperature limit under real-world PCB thermal conditions.

Does IPS60R3K4CEAKMA1 have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithic body diode with typical reverse recovery time (t_rr) of 160 ns and reverse recovery charge (Q_rr) of 0.42 µC at V_R = 400 V, I_F = 0.6 A, and di_F/dt = 100 A/µs. These values are measured per Table 7 and support reliable operation in discontinuous and quasi-resonant topologies without external snubbers.

Can IPS60R3K4CEAKMA1 be paralleled with identical units, and what layout guidance applies?

Yes, parallel operation is supported, but Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation and ensure current sharing. Layout must maintain symmetrical gate and power loop inductances, and the exposed drain tab must be soldered to equal-area copper on each unit to avoid thermal imbalance.

What is the gate threshold voltage range, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) ranges from 2.5 V to 3.5 V at T_j = 25°C, with typical value 3.0 V. This tight distribution allows reliable turn-on with 5 V logic-level drivers while maintaining sufficient noise margin against spurious turn-on - no negative gate bias is required for stability in standard applications.

IPS60R3K4CEAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 93 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPS60R3K4CEAKMA1 FAQ

1.How can I place an order for IPS60R3K4CEAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS60R3K4CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS60R3K4CEAKMA1 reliable?

The price and inventory of IPS60R3K4CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS60R3K4CEAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS60R3K4CEAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS60R3K4CEAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS60R3K4CEAKMA1?

IPS60R3K4CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS60R3K4CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS60R3K4CEAKMA1?

For technical support, including IPS60R3K4CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS60R3K4CEAKMA1 requirements.

6.How does Aetrix verify that IPS60R3K4CEAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS60R3K4CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS60R3K4CEAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS60R3K4CEAKMA1?

All IPS60R3K4CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS60R3K4CEAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS60R3K4CEAKMA1 part is unused and in its original packaging.

Return procedure for IPS60R3K4CEAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.