Infineon Technologies IPS60R600PFD7SAKMA1

Overview

IPS60R600PFD7SAKMA1 from Infineon Technologies is a 600 V, 0.6 Ω R_DS(on) superjunction MOSFET in PG-TO251-3 (IPAK SL) package with integrated fast body diode and ESD protection. It delivers 14 A pulsed drain current, 1.1 µJ E_oss at 400 V, and 1300 A/µs di_F/dt capability-optimized for ZVS topologies in high-density AC-DC adapters and LED drivers.

For engineers reviewing the IPS60R600PFD7SAKMA1 datasheet, IPS60R600PFD7SAKMA1 pinout, IPS60R600PFD7SAKMA1 application, or IPS60R600PFD7SAKMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit (8.5 nC Q_g, 0.6 Ω R_DS(on)), fast commutation ruggedness, and JEDEC-qualified thermal performance up to 150 °C junction temperature.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction structure enabling high-voltage blocking (600 V V_DS) with low conduction loss (0.6 Ω max R_DS(on) at 150 °C) and reduced switching energy (1.1 µJ E_oss at 400 V). Its gate plateau voltage is 5.6 V, and input capacitance is 344 pF at 400 V.

The integrated body diode exhibits 47–71 ns reverse recovery time and supports 1300 A/µs commutation di_F/dt, enabling robust operation in hard- and soft-switching converters. Thermal resistance from junction-to-case is 4.0 °C/W, supporting high-power-density thermal management in compact adapter PCB layouts.

Key Specifications

Pinout & Package

IPS60R600PFD7SAKMA1 uses the PG-TO251-3 (IPAK SL) package with exposed drain tab for thermal and electrical connection. The plastic body isolates gate and source terminals while providing mechanical stability for through-hole mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPP60R600PFD7 and IPD60R600PFD7, IPS60R600PFD7SAKMA1 offers the best balance of thermal resistance (4.0 °C/W), compact through-hole form factor, and JEDEC-qualified reliability-making it ideal for space-constrained, thermally demanding adapter and lighting designs where IPAK SL mounting is preferred.

Availability

IPS60R600PFD7SAKMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, BLDC motor controllers, and industrial power supplies requiring stable component supply and long-term manufacturability.

Supply support for IPS60R600PFD7SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ PFD7 family-designed specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer electronics, targeting slim form factors, ZVS operation, and simplified EMI filtering through low E_oss and controlled dv/dt.

FAQ

What is the maximum recommended gate resistor value for stable switching?

Based on the datasheet's test condition (RG = 10.2 Ω) and measured td(off) = 43.5 ns, a gate resistor between 10 Ω and 22 Ω is recommended to balance switching speed and EMI. Values above 33 Ω increase turn-off delay and may compromise ZVS timing in resonant topologies.

Can IPS60R600PFD7SAKMA1 be paralleled with identical units?

Yes, but only with individual ferrite beads (≥100 Ω impedance at 10 MHz) on each gate line, as explicitly advised in the datasheet. Without gate isolation, unequal current sharing and oscillation risk occur due to parameter spread and layout asymmetry.

Is the drain tab electrically isolated from the package body?

No-the drain tab is internally connected to Pin 2 (Drain) and is not insulated. When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is mandatory unless the heatsink is referenced to the drain potential.

What is the typical reverse recovery charge (Q_rr) under real-world conditions?

The datasheet specifies Q_rr = 0.10–0.20 µC at VR = 400 V, IF = 1.7 A, and di_F/dt = 100 A/µs. In actual ZVS adapters, measured Q_rr remains within this range due to the integrated diode's optimized doping profile and low stored charge.