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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS60R650CEAKMA1

Name: IPS60R650CEAKMA1
Brand: Infineon Technologies
SKU: IPS60R650CEAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPS60R650CEAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPS60R650CEAKMA1.pdf

Description:: CONSUMER

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPS60R650CEAKMA1 from Infineon Technologies is a 600 V, 9.9 A superjunction N-channel MOSFET in TO-251 (IPAK SL) package with 650 mΩ max R_DS(on) at 10 V_GS, 20.5 nC total gate charge, and 1.9 µJ output energy at 400 V - optimized for PFC and hard-switching PWM stages in PC silverbox, LED lighting, and LCD TV power supplies.

For engineers reviewing the IPS60R650CEAKMA1 datasheet, IPS60R650CEAKMA1 pinout, IPS60R650CEAKMA1 application, or IPS60R650CEAKMA1 equivalent, key selection criteria include commutation ruggedness (500 A/µs di/dt), low E_oss for ZVS/ZCS operation, gate drive simplicity (5.4 V plateau), and thermal resistance of 1.52 °C/W (junction-to-case).

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking (600 V) with significantly reduced R_DS(on) × Q_g figure-of-merit versus planar MOSFETs. Its 20.5 nC Q_g and 10.5 nC Q_gd support fast switching while maintaining robust dv/dt immunity (50 V/ns) and avalanche capability (133 mJ single-pulse).

The integrated body diode exhibits 250 ns reverse recovery time and 2.1 µC Q_rr at 400 V, enabling reliable operation in discontinuous conduction mode (DCM) PFC and resonant topologies. Thermal design is supported by 1.52 °C/W R_thJC and 62 °C/W R_thJA on minimal PCB footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50 % voltage margin for surge and ringing
R_DS(on),max	650 mΩ at T_j = 150 °C - enables <9.9 A continuous conduction with ≤1.2 W conduction loss at 25 °C case
Q_g,typ	20.5 nC - allows efficient gate driving with standard 1–2 A peak drivers at 100–300 kHz
E_oss@400V	1.9 µJ - reduces turn-off loss and enables soft-switching in LLC and PFC circuits
dv/dt ruggedness	50 V/ns - ensures noise immunity in high-dV/dt half-bridge and totem-pole PFC layouts
I_D,pulse	19 A - supports short-term overload conditions in adapter and lighting SMPS without derating
T_j,max	150 °C - permits operation in sealed enclosures with limited airflow up to 100 °C ambient

Pinout & Package

IPS60R650CEAKMA1 uses the PG-TO251 (IPAK SL) package with exposed drain tab for thermal enhancement. Pin 1 is Gate, Pin 2 is Drain (tab-connected), Pin 3 is Source - enabling low-inductance source return and direct heatsinking via the drain tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; 10 Ω internal gate resistance simplifies layout and dampens oscillation
Pin 2 (Drain / Tab)	High-voltage power input	Exposed metal tab provides primary thermal path to heatsink; electrically tied to drain node
Pin 3 (Source)	Power return and reference	Serves as local ground reference for gate driver; low-inductance connection critical for EMI control

Key Features

Feature	Design Value
Extremely low FOM (R_DS(on) × Q_g)	13.3 Ω·nC - delivers higher efficiency than standard SJ-MOSFETs in 65–100 kHz PFC stages
High commutation ruggedness	500 A/µs di/dt rating - sustains fast current transitions in totem-pole PFC without false turn-on
Easy gate drive	5.4 V gate plateau voltage - reduces Miller effect sensitivity and enables stable operation with low-Z drivers
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets IEC 61249-2-21 and JEDEC J-STD-020 standards
Standard grade qualification	Rated for industrial temperature range (−40 to +150 °C) - suitable for non-automotive consumer and lighting applications

Applications

PC Silverbox Power Supply

LCD TV Main Power Stage

Use Scenario: Active clamp forward or LLC resonant converter operating at 100–200 kHz with 380 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 6–8 A RMS current in zero-voltage switching (ZVS) condition.

Use Value: Low E_oss (1.9 µJ) minimizes turn-off loss during ZVS transition; 650 mΩ R_DS(on) limits conduction loss to <0.7 W at full load.

Use Scenario: Two-transistor forward or asymmetrical half-bridge powering 120–240 W backlight inverters.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier driver in secondary-side regulation stage.

Use Value: 50 V/ns dv/dt ruggedness prevents spurious turn-on during fast transformer reset; 150 °C T_j,max supports compact heatsink design.

Indoor LED Driver

Universal Input Adapter

Use Scenario: 60–100 W flyback or buck-boost PFC+DCM controller for smart lighting modules.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) PFC switch operating at variable frequency up to 150 kHz.

Use Value: 250 ns t_rr and 2.1 µC Q_rr ensure clean diode commutation; low Q_g enables efficient 3.3 V MCU-driven gate control.

Use Scenario: Dual-stage 10–30 W adapter with boost PFC followed by QR flyback.

IC Role / Device Role / Timing Role: Primary switch in boost PFC stage handling universal AC input (90–264 VAC).

Use Value: 133 mJ E_AS withstands line surges; 650 mΩ R_DS(on) maintains >92 % efficiency at 230 VAC full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	600 V, 60 mΩ R_DS(on), 42 nC Q_g, TO-220 package	Higher conduction loss but lower switching loss at <60 kHz; requires larger gate driver due to 2× Q_g	Preferable where thermal mass outweighs switching speed needs, e.g., fixed-frequency flyback with large heatsink
IPP60R650C7	600 V, 650 mΩ R_DS(on), 19.5 nC Q_g, TO-220FP package, same CoolMOS™ CE generation	Near-identical electrical specs; differs only in package (TO-220FP vs. TO-251) and thermal resistance (1.7 K/W vs. 1.52 K/W)	Select IPP60R650C7 when through-hole mounting or higher creepage clearance is required

Compared with STP60N6F6, IPS60R650CEAKMA1 offers superior switching efficiency in high-frequency PFC; compared with IPP60R650C7, it delivers 12 % lower junction-to-case thermal resistance in surface-mount form factor, enabling denser board layouts.

Availability

IPS60R650CEAKMA1 is available at Aetrix Electronics and suitable for PC silverbox power supplies, indoor LED drivers, and universal-input adapters requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for IPS60R650CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CE family - a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-density power conversion in consumer and lighting applications without compromising ruggedness or ease of use.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 6.8 Ω external gate resistor is validated in the datasheet for 400 V V_DD, 3 A I_D, and 13 V V_GS. Values above 15 Ω increase turn-off time beyond 100 ns and risk shoot-through in half-bridge configurations. For 3.3 V MCU drive, a 10 Ω series resistor with active pull-down is recommended to maintain 5.4 V plateau integrity.

Can IPS60R650CEAKMA1 be paralleled in high-current PFC designs?

Yes, but only with gate ferrite beads (100–220 Ω @ 100 MHz) on each device and individual gate resistors to suppress oscillation. The datasheet specifies that unfiltered parallel operation risks dynamic current imbalance due to parametric spread in Q_gd and threshold voltage (2.5–3.5 V). Matching V_GS(th) within ±0.2 V is advised for >4-device arrays.

Does this MOSFET require a negative gate turn-off voltage?

No - the device is rated for −20 V static and −30 V dynamic V_GS, but operation with 0 V turn-off is fully supported. Negative bias is unnecessary due to its 5.4 V gate plateau and low Miller capacitance (10.5 nC Q_gd). Adding −5 V may improve noise immunity in high-dv/dt environments but adds driver complexity without measurable efficiency gain.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the DC SOA limit is 4.2 A at 400 V, per Figure 7 in the datasheet. This is governed by thermal saturation - not avalanche or breakdown. Pulse operation up to 10 µs extends the limit to 12 A at 400 V, provided duty cycle remains below 1 % to avoid junction overheating beyond 150 °C.

IPS60R650CEAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.9A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 20.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 82W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPS60R650CEAKMA1 FAQ

1.How can I place an order for IPS60R650CEAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS60R650CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS60R650CEAKMA1 reliable?

The price and inventory of IPS60R650CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS60R650CEAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS60R650CEAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS60R650CEAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS60R650CEAKMA1?

IPS60R650CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS60R650CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS60R650CEAKMA1?

For technical support, including IPS60R650CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS60R650CEAKMA1 requirements.

6.How does Aetrix verify that IPS60R650CEAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS60R650CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS60R650CEAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS60R650CEAKMA1?

All IPS60R650CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS60R650CEAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS60R650CEAKMA1 part is unused and in its original packaging.

Return procedure for IPS60R650CEAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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