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Infineon Technologies IPS60R800CEAKMA1

Part No.:
IPS60R800CEAKMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIPS60R800CEAKMA1.pdf
Description:
CONSUMER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,734

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Product details

Overview

IPS60R800CEAKMA1 from Infineon Technologies is a 600 V, 800 mΩ CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK SL) package, featuring 8.4 A continuous drain current, 17.2 nC total gate charge, and 1.6 µJ output energy at 400 V. It delivers low conduction and switching losses for high-efficiency PFC and hard-switching PWM stages in consumer lighting and adapter applications.

For engineers reviewing the IPS60R800CEAKMA1 datasheet, IPS60R800CEAKMA1 pinout, IPS60R800CEAKMA1 application, or IPS60R800CEAKMA1 equivalent, key selection criteria include RDS(on) temperature stability, Eoss-driven soft-switching capability, commutation ruggedness up to 500 A/µs, and gate drive simplicity with 5.4 V plateau voltage.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure optimized for cost-sensitive, high-frequency SMPS designs. Its 600 V VDS rating, 1.70 °C/W RthJC, and 373 pF Ciss support thermally constrained layouts while maintaining robust dv/dt immunity (50 V/ns) and reverse diode recovery (250 ns trr).

The MOSFET operates with a 2.5–3.5 V gate threshold and exhibits stable RDS(on) up to 150 °C junction temperature. Its 8.9 nC Qgd/2 nC Qgs ratio enables predictable turn-on/turn-off timing under 6.8 Ω gate resistance, and its 72 mJ single-pulse avalanche energy ensures reliability in transient overvoltage conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Rated blocking voltage for universal-input offline PFC and main switch stages
RDS(on) 0.80 Ω max @ Tj = 150 °C - Enables low conduction loss in compact 8.4 A continuous operation
Qg 17.2 nC typ - Low gate drive power requirement compatible with standard PWM controllers
Eoss 1.6 µJ @ 400 V - Reduces turn-off loss and improves ZVS/ZCS feasibility in resonant topologies
dv/dt ruggedness 50 V/ns - Ensures reliable operation in high-dV/dt hard-switched converters without false triggering
ID,pulse 15.7 A - Supports peak-load handling in adapter and TV power supplies with margin
trr 250 ns - Fast body diode recovery minimizes shoot-through risk in synchronous rectification

Pinout & Package

Package: PG-TO251 (IPAK SL), surface-mount, with exposed drain tab for thermal enhancement. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate Control terminal; requires ≤20 V static / ≤30 V dynamic bias; low 11 Ω internal gate resistance aids drive stability
Pin 2 / Tab Drain Main high-side power terminal; tab provides low-inductance, high-current path and primary thermal interface to PCB copper
Pin 3 Source Reference node for gate drive and current sensing; tied to source of external driver or controller ground plane

Key Features

Feature Design Value
Extremely low FOM (RDS(on) × Qg) 0.80 Ω × 17.2 nC = 13.8 Ω·nC - Delivers superior efficiency vs. conventional SJ-MOSFETs in 65–100 kHz PFC
High commutation ruggedness 500 A/µs diF/dt capability - Enables reliable operation in LLC and phase-shifted full-bridge without snubbers
Easy gate drive 5.4 V gate plateau voltage - Simplifies level-shifting and reduces gate driver IC complexity in half-bridge configurations
Pb-free & halogen-free RoHS-compliant plating and mold compound - Meets IEC 61249-2-21 and JEDEC J-STD-020 MSL1 reflow requirements

Applications

LED Driver Power Stage PC Silverbox PFC

Use Scenario: Constant-current LED driver for indoor architectural lighting operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: Active switch in boost PFC pre-regulator stage, switching at 65 kHz with critical conduction mode control.

Use Value: 1.6 µJ Eoss and 250 ns trr reduce switching loss by ~18% versus prior-gen SJ-MOSFETs, enabling >95% system efficiency at full load.

Use Scenario: 300 W ATX PC power supply with active PFC and LLC resonant main converter.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) PFC boost circuit, driven by UCC28070 controller.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during fast voltage transitions across bridge rectifier output.

LCD TV Backlight Inverter USB-C PD Adapter

Use Scenario: 120 W CCFL or LED backlight inverter for 32″ LCD TV with universal AC input.

IC Role / Device Role / Timing Role: Main switch in asymmetrical half-bridge topology operating at 100 kHz with zero-voltage switching.

Use Value: 373 pF Ciss and 27 pF Coss enable precise ZVS timing margin control, reducing EMI and improving light uniformity.

Use Scenario: 65 W GaN-assisted USB-C PD adapter with hybrid flyback + active clamp configuration.

IC Role / Device Role / Timing Role: Clamp switch in active-clamp flyback, handling 400 V DC bus with 15.7 A pulse current capability.

Use Value: 72 mJ single-pulse avalanche energy absorbs clamp capacitor discharge transients, eliminating need for external TVS protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP60R800C6 Same RDS(on) (0.80 Ω), but higher Qg (21.5 nC); TO-220FP package with isolated flange Requires heatsink mounting; less suitable for space-constrained SMD designs Select when mechanical isolation or legacy through-hole compatibility is required
IPD60R800CE Identical electrical specs, but in DPAK (TO-252) package with lower RthJA (35–45 °C/W on 6 cm² copper) Better thermal performance on PCB; higher assembly yield in automated SMT lines Select when board-level thermal management dominates over package footprint constraints

Compared with IPP60R800C6 and IPD60R800CE, the IPS60R800CEAKMA1 offers optimal trade-off between SMD manufacturability, thermal interface via exposed tab, and gate drive simplicity-making it preferred for high-volume, cost-sensitive lighting and adapter platforms where PCB real estate and reflow compatibility are critical.

Availability

IPS60R800CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC circuits, and LCD TV backlight inverters requiring stable component supply and long-term production continuity.

Supply support for IPS60R800CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the CoolMOS™ CE platform-a cost-optimized superjunction MOSFET family targeting high-efficiency, high-volume consumer and lighting power supplies with strict BOM cost targets.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 6.8 Ω for characterization, and the device's 11 Ω internal gate resistance supports stable operation with external RG up to 22 Ω. Higher values (>33 Ω) increase turn-off time beyond 60 ns and may compromise dv/dt immunity in high-noise environments; use ferrite beads only if paralleling multiple units.

Can IPS60R800CEAKMA1 be used in parallel configurations?

Yes, but gate drive must be individually buffered: each MOSFET requires a dedicated totem-pole driver or gate ferrite bead (≥100 Ω impedance at 10 MHz) to suppress oscillation. Matching RDS(on) tolerance (±20%) and thermal layout symmetry are mandatory to ensure current sharing within ±15% across units.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is rated for −20 V static and −30 V dynamic VGS, but operation with 0 V turn-off is fully supported. Negative bias is unnecessary due to its 50 V/ns dv/dt ruggedness and low Qgd/Qgs ratio, which suppresses Miller-induced false turn-on in high-side configurations.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At TC = 100 °C, the DC SOA limits continuous drain current to 4.2 A at 400 V VDS (per Figure 7). Pulse operation up to 100 µs allows 8.4 A at 400 V, provided duty cycle remains ≤10% and thermal transient impedance stays below 0.8 K/W per pulse-verified using ZthJC(tp) curves in the datasheet.

IPS60R800CEAKMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
8.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:
17.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
373 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
74W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO251-3

IPS60R800CEAKMA1 FAQ

1.How can I place an order for IPS60R800CEAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS60R800CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS60R800CEAKMA1 reliable?

The price and inventory of IPS60R800CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS60R800CEAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS60R800CEAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS60R800CEAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS60R800CEAKMA1?

IPS60R800CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS60R800CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS60R800CEAKMA1?

For technical support, including IPS60R800CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS60R800CEAKMA1 requirements.

6.How does Aetrix verify that IPS60R800CEAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS60R800CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS60R800CEAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS60R800CEAKMA1?

All IPS60R800CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS60R800CEAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS60R800CEAKMA1 part is unused and in its original packaging.

Return procedure for IPS60R800CEAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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