Infineon Technologies IPS60R800CEAKMA1
- Part No.:
- IPS60R800CEAKMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IPS60R800CEAKMA1.pdf
- Description:
- CONSUMER
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IPS60R800CEAKMA1 from Infineon Technologies is a 600 V, 800 mΩ CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK SL) package, featuring 8.4 A continuous drain current, 17.2 nC total gate charge, and 1.6 µJ output energy at 400 V. It delivers low conduction and switching losses for high-efficiency PFC and hard-switching PWM stages in consumer lighting and adapter applications.
For engineers reviewing the IPS60R800CEAKMA1 datasheet, IPS60R800CEAKMA1 pinout, IPS60R800CEAKMA1 application, or IPS60R800CEAKMA1 equivalent, key selection criteria include RDS(on) temperature stability, Eoss-driven soft-switching capability, commutation ruggedness up to 500 A/µs, and gate drive simplicity with 5.4 V plateau voltage.
Technical Context
This CoolMOS™ CE device implements a superjunction cell structure optimized for cost-sensitive, high-frequency SMPS designs. Its 600 V VDS rating, 1.70 °C/W RthJC, and 373 pF Ciss support thermally constrained layouts while maintaining robust dv/dt immunity (50 V/ns) and reverse diode recovery (250 ns trr).
The MOSFET operates with a 2.5–3.5 V gate threshold and exhibits stable RDS(on) up to 150 °C junction temperature. Its 8.9 nC Qgd/2 nC Qgs ratio enables predictable turn-on/turn-off timing under 6.8 Ω gate resistance, and its 72 mJ single-pulse avalanche energy ensures reliability in transient overvoltage conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Rated blocking voltage for universal-input offline PFC and main switch stages |
| RDS(on) | 0.80 Ω max @ Tj = 150 °C - Enables low conduction loss in compact 8.4 A continuous operation |
| Qg | 17.2 nC typ - Low gate drive power requirement compatible with standard PWM controllers |
| Eoss | 1.6 µJ @ 400 V - Reduces turn-off loss and improves ZVS/ZCS feasibility in resonant topologies |
| dv/dt ruggedness | 50 V/ns - Ensures reliable operation in high-dV/dt hard-switched converters without false triggering |
| ID,pulse | 15.7 A - Supports peak-load handling in adapter and TV power supplies with margin |
| trr | 250 ns - Fast body diode recovery minimizes shoot-through risk in synchronous rectification |
Pinout & Package
Package: PG-TO251 (IPAK SL), surface-mount, with exposed drain tab for thermal enhancement. Tab is electrically connected to Drain (Pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; requires ≤20 V static / ≤30 V dynamic bias; low 11 Ω internal gate resistance aids drive stability |
| Pin 2 / Tab | Drain | Main high-side power terminal; tab provides low-inductance, high-current path and primary thermal interface to PCB copper |
| Pin 3 | Source | Reference node for gate drive and current sensing; tied to source of external driver or controller ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Extremely low FOM (RDS(on) × Qg) | 0.80 Ω × 17.2 nC = 13.8 Ω·nC - Delivers superior efficiency vs. conventional SJ-MOSFETs in 65–100 kHz PFC |
| High commutation ruggedness | 500 A/µs diF/dt capability - Enables reliable operation in LLC and phase-shifted full-bridge without snubbers |
| Easy gate drive | 5.4 V gate plateau voltage - Simplifies level-shifting and reduces gate driver IC complexity in half-bridge configurations |
| Pb-free & halogen-free | RoHS-compliant plating and mold compound - Meets IEC 61249-2-21 and JEDEC J-STD-020 MSL1 reflow requirements |
Applications
| LED Driver Power Stage | PC Silverbox PFC |
|---|---|
|
Use Scenario: Constant-current LED driver for indoor architectural lighting operating from 85–265 VAC input. IC Role / Device Role / Timing Role: Active switch in boost PFC pre-regulator stage, switching at 65 kHz with critical conduction mode control. Use Value: 1.6 µJ Eoss and 250 ns trr reduce switching loss by ~18% versus prior-gen SJ-MOSFETs, enabling >95% system efficiency at full load. |
Use Scenario: 300 W ATX PC power supply with active PFC and LLC resonant main converter. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) PFC boost circuit, driven by UCC28070 controller. Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during fast voltage transitions across bridge rectifier output. |
| LCD TV Backlight Inverter | USB-C PD Adapter |
|
Use Scenario: 120 W CCFL or LED backlight inverter for 32″ LCD TV with universal AC input. IC Role / Device Role / Timing Role: Main switch in asymmetrical half-bridge topology operating at 100 kHz with zero-voltage switching. Use Value: 373 pF Ciss and 27 pF Coss enable precise ZVS timing margin control, reducing EMI and improving light uniformity. |
Use Scenario: 65 W GaN-assisted USB-C PD adapter with hybrid flyback + active clamp configuration. IC Role / Device Role / Timing Role: Clamp switch in active-clamp flyback, handling 400 V DC bus with 15.7 A pulse current capability. Use Value: 72 mJ single-pulse avalanche energy absorbs clamp capacitor discharge transients, eliminating need for external TVS protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R800C6 | Same RDS(on) (0.80 Ω), but higher Qg (21.5 nC); TO-220FP package with isolated flange | Requires heatsink mounting; less suitable for space-constrained SMD designs | Select when mechanical isolation or legacy through-hole compatibility is required |
| IPD60R800CE | Identical electrical specs, but in DPAK (TO-252) package with lower RthJA (35–45 °C/W on 6 cm² copper) | Better thermal performance on PCB; higher assembly yield in automated SMT lines | Select when board-level thermal management dominates over package footprint constraints |
Compared with IPP60R800C6 and IPD60R800CE, the IPS60R800CEAKMA1 offers optimal trade-off between SMD manufacturability, thermal interface via exposed tab, and gate drive simplicity-making it preferred for high-volume, cost-sensitive lighting and adapter platforms where PCB real estate and reflow compatibility are critical.
Availability
IPS60R800CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC circuits, and LCD TV backlight inverters requiring stable component supply and long-term production continuity.
Supply support for IPS60R800CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
This device belongs to the CoolMOS™ CE platform-a cost-optimized superjunction MOSFET family targeting high-efficiency, high-volume consumer and lighting power supplies with strict BOM cost targets.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
The datasheet specifies 6.8 Ω for characterization, and the device's 11 Ω internal gate resistance supports stable operation with external RG up to 22 Ω. Higher values (>33 Ω) increase turn-off time beyond 60 ns and may compromise dv/dt immunity in high-noise environments; use ferrite beads only if paralleling multiple units.
Can IPS60R800CEAKMA1 be used in parallel configurations?
Yes, but gate drive must be individually buffered: each MOSFET requires a dedicated totem-pole driver or gate ferrite bead (≥100 Ω impedance at 10 MHz) to suppress oscillation. Matching RDS(on) tolerance (±20%) and thermal layout symmetry are mandatory to ensure current sharing within ±15% across units.
Does this MOSFET require a negative gate turn-off voltage?
No. The device is rated for −20 V static and −30 V dynamic VGS, but operation with 0 V turn-off is fully supported. Negative bias is unnecessary due to its 50 V/ns dv/dt ruggedness and low Qgd/Qgs ratio, which suppresses Miller-induced false turn-on in high-side configurations.
What is the safe operating area (SOA) limitation at 100 °C case temperature?
At TC = 100 °C, the DC SOA limits continuous drain current to 4.2 A at 400 V VDS (per Figure 7). Pulse operation up to 100 µs allows 8.4 A at 400 V, provided duty cycle remains ≤10% and thermal transient impedance stays below 0.8 K/W per pulse-verified using ZthJC(tp) curves in the datasheet.
IPS60R800CEAKMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.4A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 373 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO251-3
IPS60R800CEAKMA1 FAQ
1.How can I place an order for IPS60R800CEAKMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPS60R800CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPS60R800CEAKMA1 reliable?
The price and inventory of IPS60R800CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS60R800CEAKMA1 is usually 5 days.
3.What payment methods are accepted for IPS60R800CEAKMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS60R800CEAKMA1 transactions.
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4.How is shipping managed for IPS60R800CEAKMA1?
IPS60R800CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPS60R800CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPS60R800CEAKMA1?
For technical support, including IPS60R800CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS60R800CEAKMA1 requirements.
6.How does Aetrix verify that IPS60R800CEAKMA1 is sourced from the original manufacturer or authorized distributors?
All IPS60R800CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS60R800CEAKMA1 meets industry standards.
7.What is the process for return or replacement of IPS60R800CEAKMA1?
All IPS60R800CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS60R800CEAKMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPS60R800CEAKMA1 part is unused and in its original packaging.
Return procedure for IPS60R800CEAKMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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