Infineon Technologies IPS65R1K0CEAKMA2

Overview

IPS65R1K0CEAKMA2 from Infineon Technologies is a 650 V, 1.0 Ω (max) R_DS(on), TO-251 (IPAK SL) packaged CoolMOS™ CE superjunction MOSFET optimized for cost-sensitive high-efficiency SMPS in consumer and lighting applications. It delivers 7.2 A continuous drain current at T_C = 25°C, 15.3 nC total gate charge, and 1.5 µJ output energy (E_oss) at 400 V, enabling high-frequency operation in offline adapters and LED drivers.

For engineers reviewing the IPS65R1K0CEAKMA2 datasheet, IPS65R1K0CEAKMA2 pinout, IPS65R1K0CEAKMA2 application, or IPS65R1K0CEAKMA2 equivalent, key selection criteria include its 700 V V_DS rating at T_j,max, 50 V/ns dv/dt ruggedness, 1.85 °C/W R_thJC, and gate plateau voltage of 5.4 V - all critical for reliable hard-switched flyback and resonant converter designs.

Technical Context

This CoolMOS™ CE device implements a superjunction structure to achieve low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss, directly enabling higher switching frequencies without sacrificing conduction loss. Its 500 A/µs diode commutation speed and 226 ns reverse recovery time support robust synchronous rectification and ZVS operation.

The MOSFET features a 2.5–3.5 V gate threshold voltage (V_GS(th)), 5.5 Ω gate resistance, and 328 pF input capacitance - parameters that simplify gate drive design while maintaining noise immunity and stable turn-on/turn-off timing under varying load conditions.

Key Specifications

Pinout & Package

IPS65R1K0CEAKMA2 uses the PG-TO251-3 (IPAK SL) package with an exposed drain tab for thermal conduction. The package has three leads: Pin 1 (Gate), Pin 2 (Drain, connected to metal tab), Pin 3 (Source).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP65N6F6 and IPP65R1K0C7, IPS65R1K0CEAKMA2 offers superior cost-performance balance in IPAK SL footprint, with lower gate charge than STP65N6F6 and better thermal interface than IPP65R1K0C7 due to its exposed drain tab design.

Availability

IPS65R1K0CEAKMA2 is available at Aetrix Electronics and suitable for PC silverbox adapters, indoor LED lighting drivers, and LCD TV backlight inverters requiring stable component supply and long-term industrial availability.

Supply support for IPS65R1K0CEAKMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The CoolMOS™ CE product line targets cost-sensitive, high-efficiency offline power conversion in consumer and lighting markets, balancing performance, ease of use, and manufacturability in standard packages like TO-251.

FAQ

What is the maximum junction temperature for continuous operation?

The IPS65R1K0CEAKMA2 is rated for continuous operation up to 150°C junction temperature, as specified in Table 2 of the Rev. 2.2 datasheet. This rating applies under defined thermal conditions including case temperature limits and proper PCB copper area for heat dissipation.

Is this MOSFET suitable for paralleling in high-current designs?

Yes, but Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to ensure balanced dynamic current sharing. The device's matched threshold voltage and low gate resistance support stable paralleling when layout symmetry and gate drive impedance are carefully controlled.

Does it include an integrated body diode, and what are its key recovery characteristics?

Yes, it features an integrated fast-recovery body diode with 226 ns reverse recovery time (t_rr) and 1.3 µC reverse recovery charge (Q_rr) at 400 V, 2.2 A, and 100 A/µs di/dt. These values are measured per Table 7 and support efficient operation in quasi-resonant and LLC topologies.

What is the gate-source voltage limit during dynamic operation?

The gate-source voltage limit is ±30 V under dynamic (AC) conditions with frequency >1 Hz, as stated in Table 2. This exceeds typical 12–15 V gate drive levels and provides margin against transient overshoot in noisy SMPS environments.