Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS65R1K5CEAKMA1

Name: IPS65R1K5CEAKMA1
Brand: Infineon Technologies
SKU: IPS65R1K5CEAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPS65R1K5CEAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: IPS65R1K5CEAKMA1.pdf

Description:: MOSFET N-CH 650V 3.1A TO251

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,705

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPS65R1K5CEAKMA1 from Infineon Technologies is a 650 V, 1.5 Ω (max) superjunction MOSFET in PG-TO251 (IPAK SL) package, featuring 10.5 nC total gate charge and 1.15 µJ output energy at 400 V. It serves as a high-voltage switching device in PFC and hard-switching PWM stages for consumer power supplies and indoor lighting systems.

For engineers reviewing the IPS65R1K5CEAKMA1 datasheet, IPS65R1K5CEAKMA1 pinout, IPS65R1K5CEAKMA1 application, or IPS65R1K5CEAKMA1 equivalent, key selection criteria include R_DS(on) temperature stability, E_oss-driven soft-switching capability, commutation ruggedness up to 500 A/µs, and gate drive simplicity with 5.4 V plateau voltage.

Technical Context

This CoolMOS™ CE device implements a superjunction structure optimized for cost-sensitive, high-efficiency AC-DC conversion. Its 650 V V_(BR)DSS, 1.26 Ω typical R_DS(on) at 25°C, and low Q_g/Q_gd ratio (1.3 nC / 5.8 nC) enable fast turn-on while maintaining robust dv/dt immunity (50 V/ns) and reverse recovery performance (t_rr = 200 ns).

The MOSFET integrates a monolithic body diode with 0.9 V forward voltage at 1.5 A and supports parallel operation when paired with gate ferrite beads. Thermal resistance R_thJC is 2.37 °C/W, enabling 53 W power dissipation at T_C = 25°C without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - rated blocking voltage for universal-input offline SMPS designs
R_DS(on) max	1.50 Ω @ T_j = 150°C - ensures stable conduction loss across full operating temperature range
Q_g typ	10.5 nC - enables efficient 100–300 kHz switching with standard gate drivers
E_oss @ 400 V	1.15 µJ - reduces turn-off loss and improves ZVS behavior in resonant topologies
I_D cont	5.2 A @ T_C = 25°C - defines continuous current capability under natural convection conditions
t_rr	200 ns - limits diode reverse recovery stress during hard commutation
R_thJC	2.37 °C/W - allows direct heatsink mounting via exposed drain tab for thermal management

Pinout & Package

IPS65R1K5CEAKMA1 uses the PG-TO251 (IPAK SL) package with an exposed drain tab for thermal conduction and mechanical mounting. The leadframe design places the drain on the tab and pins 1–3 in linear order.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; requires ≤20 V static and ≤30 V dynamic bias
Pin 2 (Drain) + Tab	High-side power terminal	Electrically connected to exposed metal tab; primary heat path to heatsink
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive reference; tied to power ground

Key Features

Feature	Design Value
Superjunction architecture	Enables 650 V rating with R_DS(on) × Q_g figure-of-merit < 16 Ω·nC for high efficiency at 100+ kHz
Commutation ruggedness	Rated for 500 A/µs di/dt and 50 V/ns dv/dt - supports reliable operation in hard-switched PFC boost stages
Gate drive simplicity	5.4 V gate plateau voltage and 6.5 Ω intrinsic gate resistance reduce need for external gate resistors
Halogen-free & Pb-free	Meets RoHS and JEDEC MSL-1 standards; suitable for consumer-grade reflow assembly without special handling

Applications

PC Silverbox Power Supply

LCD TV Main Power Stage

Use Scenario: 650 V primary-side switch in active clamp forward or LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer during each switching cycle.

Use Value: Low E_oss (1.15 µJ) minimizes turn-off loss and enables zero-voltage switching at 200–300 kHz.

Use Scenario: Boost PFC stage operating at 65–100 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching high-side switch in continuous conduction mode (CCM) boost topology.

Use Value: 500 A/µs di/dt rating ensures robustness against inductive kickback during line transients.

Indoor LED Driver

Adapter Primary Switch

Use Scenario: Flyback primary switch in constant-current LED driver for commercial downlights.

IC Role / Device Role / Timing Role: Main power transistor regulating output current via primary-side sensing.

Use Value: 1.5 Ω R_DS(on) at 125°C maintains <1.5 W conduction loss at 350 mA RMS drain current.

Use Scenario: Primary-side switch in compact 36 W wall adapter using quasi-resonant flyback.

IC Role / Device Role / Timing Role: Voltage-controlled switch synchronizing with valley detection for soft switching.

Use Value: 10.5 nC Q_g allows full enhancement with 1 A peak gate driver, reducing driver BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	650 V, 0.58 Ω R_DS(on), 45 nC Q_g, TO-220 package	Higher conduction efficiency but significantly higher switching loss due to Q_g; requires larger heatsink	Select when lowest R_DS(on) dominates over switching frequency and board space constraints
IPP65R1K5C7	650 V, 1.5 Ω R_DS(on), 10.2 nC Q_g, same PG-TO251 package, CoolMOS™ C7 generation	Lower E_oss (0.85 µJ) and improved t_rr (140 ns); pin-compatible drop-in upgrade	Select for new designs requiring higher efficiency in resonant topologies or tighter thermal margins

Compared with STP65N6F6, IPS65R1K5CEAKMA1 trades higher R_DS(on) for lower Q_g and E_oss, favoring high-frequency operation. Against IPP65R1K5C7, it offers proven reliability in cost-sensitive lighting applications but lacks the latest generation's reduced recovery charge and energy.

Availability

IPS65R1K5CEAKMA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, LCD TV main power stages, and indoor LED drivers requiring stable component supply and long-term industrial availability.

Supply support for IPS65R1K5CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CE product line, engineered for cost-optimized, high-efficiency AC-DC conversion in consumer and lighting applications where price-performance balance is critical.

FAQ

Is IPS65R1K5CEAKMA1 suitable for paralleling in high-current PFC designs?

Yes - the device supports paralleling with proper layout and gate drive practices. Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation and ensure current sharing. Matching R_DS(on) tolerance (±20%) and thermal coupling between devices are essential for balanced operation.

What is the maximum recommended gate resistor value for 100 kHz operation?

A 10.2 Ω gate resistor is specified in the datasheet test condition for 100–300 kHz switching. At 100 kHz, this value provides optimal trade-off between switching speed (t_r = 5.9 ns, t_f = 18.2 ns) and gate ringing suppression. Lower values may increase EMI; higher values raise switching losses without meaningful dv/dt improvement.

Does the drain tab require electrical isolation from the heatsink?

No - the drain is electrically connected to the exposed metal tab and must be mounted directly to an isolated heatsink or insulated with a thermally conductive but electrically isolating pad. Direct mounting to a grounded heatsink creates a short circuit unless system-level grounding accommodates drain-referenced topology.

How does R_DS(on) vary over temperature, and what is its impact on thermal design?

R_DS(on) increases linearly with junction temperature, reaching 3.28 Ω at 150°C (vs. 1.26 Ω at 25°C). This positive temperature coefficient aids current sharing in parallel configurations but raises conduction loss at elevated temperatures - thermal design must limit T_j to ≤125°C for sustained 5.2 A operation.

IPS65R1K5CEAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 225 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 28W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251

IPS65R1K5CEAKMA1 FAQ

1.How can I place an order for IPS65R1K5CEAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS65R1K5CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS65R1K5CEAKMA1 reliable?

The price and inventory of IPS65R1K5CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS65R1K5CEAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS65R1K5CEAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS65R1K5CEAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS65R1K5CEAKMA1?

IPS65R1K5CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS65R1K5CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS65R1K5CEAKMA1?

For technical support, including IPS65R1K5CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS65R1K5CEAKMA1 requirements.

6.How does Aetrix verify that IPS65R1K5CEAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS65R1K5CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS65R1K5CEAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS65R1K5CEAKMA1?

All IPS65R1K5CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS65R1K5CEAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS65R1K5CEAKMA1 part is unused and in its original packaging.

Return procedure for IPS65R1K5CEAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…