Infineon Technologies IPS65R600E6AKMA1

Overview

IPS65R600E6AKMA1 from Infineon Technologies is a 650 V, 600 mΩ superjunction MOSFET in PG-TO251-3 (IPAK SL) package, featuring 23 nC total gate charge, 2 µJ output switching energy at 400 V, and 500 A/µs body diode commutation capability. It serves as a high-efficiency primary-side switch in hard-switched and resonant SMPS topologies for server power supplies, telecom rectifiers, and industrial UPS systems.

For engineers reviewing the IPS65R600E6AKMA1 datasheet, IPS65R600E6AKMA1 pinout, IPS65R600E6AKMA1 application, or IPS65R600E6AKMA1 equivalent, key selection criteria include R_DS(on) temperature stability up to 150 °C, low E_oss for ZVS/ZCS compatibility, rugged dv/dt immunity (50 V/ns), and JEDEC-qualified lead-free construction.

Technical Context

This CoolMOS™ E6 device implements a charge-balanced superjunction structure optimized for 650 V operation, delivering reduced R_DS(on) × Q_g figure-of-merit versus prior generations while maintaining robust avalanche performance (142 mJ single-pulse E_AS). Its gate plateau voltage of 5.5 V enables stable turn-on under varying drive conditions.

The MOSFET integrates a fast-recovery body diode with t_rr = 270 ns and Q_rr = 2 µC at 400 V, supporting high-frequency PFC and LLC resonant stages. Thermal resistance R_thJC = 2 °C/W ensures efficient heat transfer to the PCB copper pad via the exposed drain tab.

Key Specifications

Pinout & Package

IPS65R600E6AKMA1 uses the PG-TO251-3 (IPAK SL) package with an exposed drain tab on the underside for thermal and electrical connection. Pin 1 is Gate, Pin 2 is Drain (tab-connected), and Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R095C7 and IPP65R099C7, IPS65R600E6AKMA1 offers optimal balance of gate drive simplicity, thermal performance, and board-area efficiency for mid-power (100–500 W) industrial and telecom SMPS, especially where space-constrained IPAK SL mounting is required.

Availability

IPS65R600E6AKMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IPS65R600E6AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication facilities.

The CoolMOS™ E6 product line targets high-efficiency, high-density switched-mode power supplies for datacenter, telecom, and industrial infrastructure, emphasizing low-loss superjunction architecture with enhanced ruggedness and ease of use.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current for IPS65R600E6AKMA1 is 4.6 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating accounts for thermal derating due to junction-to-case resistance (2 °C/W) and maximum allowable junction temperature (150 °C).

Does this MOSFET require a gate resistor for stable operation?

Yes - a gate resistor (typically 6.8 Ω) is recommended to dampen ringing and control switching speed, as confirmed by test conditions in Table 5 (td(on), tr, td(off), tf). The internal gate resistance is 10.5 Ω, but external series resistance improves EMI performance and reduces overshoot in high-dV/dt environments.

Can IPS65R600E6AKMA1 be paralleled with identical units?

Yes, but Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to ensure balanced dynamic current sharing. The device's positive temperature coefficient of R_DS(on) supports inherent static current sharing, but dynamic imbalance remains a risk without gate-line isolation.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 2 µC at V_R = 400 V, I_F = 3.2 A, and di_F/dt = 100 A/µs, per Table 7. This value directly impacts commutation loss in half-bridge and synchronous rectifier applications, and is 25% lower than earlier CoolMOS™ E5 generation devices.