Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPS65R650CEAKMA1

Part No.:
IPS65R650CEAKMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIPS65R650CEAKMA1.pdf
Description:
MOSFET N-CH 700V 10.1A TO251-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,250

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPS65R650CEAKMA1 from Infineon Technologies is a 650 V, 10.1 A superjunction N-channel MOSFET in PG-TO251 (IPAK SL) package, featuring 650 mΩ max RDS(on) at 10 VGS, 23 nC total gate charge, and 2 µJ output energy at 400 V. It serves as a high-efficiency primary-side switch in hard-switched and resonant SMPS topologies for consumer power adapters and indoor lighting.

For engineers reviewing the IPS65R650CEAKMA1 datasheet, IPS65R650CEAKMA1 pinout, IPS65R650CEAKMA1 application, or IPS65R650CEAKMA1 equivalent, key selection criteria include commutation ruggedness (50 V/ns dv/dt), low Eoss for ZVS/ZCS operation, thermal resistance (1.45 °C/W RthJC), and gate drive simplicity (5.5 V plateau voltage).

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure optimized for cost-sensitive, high-efficiency AC-DC conversion. Its 650 V rating supports universal input (85–265 VAC) PFC and main switch stages, while its 23 nC Qg and 12 nC Qgd enable fast switching with moderate gate drive strength.

The MOSFET integrates an intrinsic body diode with 270 ns reverse recovery time and 2 µC Qrr, supporting quasi-resonant flyback and LLC operation. Its 150 °C maximum junction temperature and 1.45 °C/W RthJC allow sustained 10.1 A conduction at TC = 100 °C without derating.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V - Supports 400 V DC bus with 1.6× safety margin for surge and ringing in offline SMPS.
RDS(on),max 650 mΩ at Tj = 150 °C - Enables <1.5 W conduction loss at 10 A in 100 kHz hard-switched PFC stage.
Qg,typ 23 nC - Requires ~0.23 W gate drive power at 10 MHz switching with 10 V swing and 10 Ω driver.
Eoss@400V 2 µJ - Reduces turn-off loss by >40% vs. standard SJ-MOSFETs in 100–300 kHz QR flyback designs.
dv/dt ruggedness 50 V/ns - Withstands high dV/dt transients in totem-pole PFC without spurious turn-on.
Tj,max 150 °C - Allows full-rated current operation up to 100 °C case temperature in compact adapter PCB layouts.
RthJC 1.45 °C/W - Enables direct heatsinking via drain-tab mounting for thermally constrained lighting drivers.

Pinout & Package

IPS65R650CEAKMA1 uses the PG-TO251 (IPAK SL) surface-mount package with exposed drain tab for thermal conduction. The drain connects directly to the metal tab on the underside of the package, enabling low-inductance, high-current routing and efficient heat transfer to PCB copper.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control terminal Accepts 0–20 V logic-level gate drive; 10.5 Ω internal gate resistance limits peak current during switching.
Pin 2 (Drain) High-voltage power terminal Connected to internal die drain and external metal tab; carries full load current and must be routed with minimum loop area.
Pin 3 (Source) Reference and return path Serves as gate drive reference and current return; requires low-impedance connection to ground plane for stable switching.

Key Features

Feature Design Value
Low FOM (RDS(on) × Qg) 14.95 Ω·nC - Delivers best-in-class efficiency trade-off for cost-sensitive 65–100 W adapters.
Commutation ruggedness 50 V/ns dv/dt and 142 mJ single-pulse avalanche energy - Eliminates need for snubbers in hard-switched PFC.
Easy gate drive 5.5 V gate plateau and 10.5 Ω integrated RG - Compatible with standard 12 V gate drivers without external series resistance.
Pb-free & halogen-free RoHS-compliant plating and mold compound - Meets IEC 61249-2-21 and JEDEC J-STD-020 reflow standards.

Applications

Adapter Power Supply LCD TV Backlight Driver

Use Scenario: 65 W universal-input AC-DC adapter for notebook computers.

IC Role / Device Role / Timing Role: Primary-side hard-switched PWM switch in flyback topology operating at 65–130 kHz.

Use Value: 650 mΩ RDS(on) and 2 µJ Eoss reduce total switching + conduction loss to <1.8 W, enabling >90% efficiency at full load.

Use Scenario: LED backlight driver for 32-inch LCD TV with active PFC front-end.

IC Role / Device Role / Timing Role: PFC boost switch operating continuously at 65 kHz with 400 V DC bus.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during line transients, eliminating need for gate clamping circuits.

Indoor LED Lighting PC Silver Box PSU

Use Scenario: Dimmable 25 W constant-current LED driver with TRIAC dimming interface.

IC Role / Device Role / Timing Role: Quasi-resonant flyback switch synchronized to zero-voltage switching transitions.

Use Value: Low 270 ns trr and 2 µC Qrr minimize body diode losses during valley switching, improving light-output consistency.

Use Scenario: 500 W ATX power supply main switch in forward converter primary stage.

IC Role / Device Role / Timing Role: High-duty-cycle, high-current switch operating at 100 kHz with forced-air cooling.

Use Value: 1.45 °C/W RthJC enables 10.1 A continuous current with <45 °C junction rise above 80 °C case, ensuring long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP65R650C7 Same 650 V/650 mΩ rating but in TO-220 package; higher RthJC (0.65 °C/W) and 27 nC Qg. Better suited for through-hole, heatsink-mounted industrial supplies where board space is not constrained. Select when mechanical robustness and manual assembly are prioritized over SMT density and thermal performance.
IPD65R650CE Identical die in DPAK (TO-252); same RDS(on), Qg, and Eoss, but 2.5 °C/W RthJC and no exposed drain tab. Preferred for low-profile, low-power (<30 W) lighting drivers where PCB real estate is limited but thermal budget is relaxed. Select when footprint size is critical and thermal dissipation can be managed via large copper pour instead of direct tab mounting.

Compared with IPP65R650C7 and IPD65R650CE, IPS65R650CEAKMA1 delivers superior thermal performance (1.45 °C/W) and smallest SMT footprint among the three, making it optimal for space-constrained, high-power-density adapter and lighting designs requiring direct drain-tab heatsinking.

Availability

IPS65R650CEAKMA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, LCD TV backlight drivers, and indoor LED lighting systems requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for IPS65R650CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CE family-Infineon's cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting power conversion applications with strict BOM cost targets.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies 6.4 A continuous drain current (ID) at TC = 100 °C, derived from thermal limits and RDS(on) derating. This value assumes proper PCB copper area (≥6 cm² drain pad) and ambient airflow per Infineon's thermal test conditions in Table 3.

Can IPS65R650CEAKMA1 be paralleled for higher current handling?

Yes, but Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to ensure balanced dynamic current sharing. The device's positive RDS(on) temperature coefficient supports static current sharing, but layout symmetry and gate drive matching are critical for reliable parallel operation.

Is the body diode suitable for synchronous rectification?

No-the intrinsic body diode has 270 ns trr and 2 µC Qrr, which cause significant reverse recovery loss in high-frequency synchronous rectifier roles. It is designed for unidirectional switching only; external Schottky or MOSFET-based synchronous rectifiers are required for efficiency-critical secondary-side operation.

What is the gate threshold voltage range and its impact on drive design?

VGS(th) is specified from 2.5 V to 3.5 V at 25 °C. This narrow range ensures predictable turn-on behavior across temperature and process variation. A 10 V gate drive is recommended to fully enhance the channel and minimize RDS(on); 5 V logic-level drives will result in significantly higher conduction loss due to partial enhancement.

IPS65R650CEAKMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
440 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
86W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO251-3

IPS65R650CEAKMA1 FAQ

1.How can I place an order for IPS65R650CEAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS65R650CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS65R650CEAKMA1 reliable?

The price and inventory of IPS65R650CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS65R650CEAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS65R650CEAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS65R650CEAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS65R650CEAKMA1?

IPS65R650CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS65R650CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS65R650CEAKMA1?

For technical support, including IPS65R650CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS65R650CEAKMA1 requirements.

6.How does Aetrix verify that IPS65R650CEAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS65R650CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS65R650CEAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS65R650CEAKMA1?

All IPS65R650CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS65R650CEAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS65R650CEAKMA1 part is unused and in its original packaging.

Return procedure for IPS65R650CEAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPS65R650CEAKMA1 Tags

  • IPS65R650CEAKMA1
  • IPS65R650CEAKMA1 PDF
  • IPS65R650CEAKMA1 Datasheet
  • IPS65R650CEAKMA1 Specifications
  • IPS65R650CEAKMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPS65R650CEAKMA1
  • Buy IPS65R650CEAKMA1
  • IPS65R650CEAKMA1 Price
  • IPS65R650CEAKMA1 Distributor
  • IPS65R650CEAKMA1 Supplier
  • IPS65R650CEAKMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER