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Infineon Technologies IPS70R2K0CEE8211AKMA1

Part No.:
IPS70R2K0CEE8211AKMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixIPS70R2K0CEE8211AKMA1.pdf
Description:
IPS70R2K0CE - 700V COOLMOS N-CHA
Quantity:
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Inventory:40,500

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Product details

Overview

IPS70R2K0CEE8211AKMA1 from Infineon Technologies is a 700 V superjunction N-channel CoolMOS™ CE power MOSFET in PG-TO251 (IPAK SL) package, with drain-connected tab, RDS(on) ≤ 2.00 Ω at 10 VGS, Qg = 7.8 nC, and Eoss = 0.85 µJ at 400 V - optimized for quasi-resonant flyback converters in low-power mobile chargers and power tool adapters.

For engineers reviewing the IPS70R2K0CEE8211AKMA1 datasheet, IPS70R2K0CEE8211AKMA1 pinout, IPS70R2K0CEE8211AKMA1 application, or IPS70R2K0CEE8211AKMA1 equivalent, key selection criteria include commutation ruggedness (dv/dt = 50 V/ns), low gate charge for high-frequency switching, thermal resistance RthJC = 2.95 °C/W, and qualified standard-grade reliability up to Tj = 150 °C.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking (V(BR)DSS = 700 V) while maintaining low conduction loss (RDS(on) ≤ 2.00 Ω) and fast switching dynamics (td(off) = 25 ns, tf = 27 ns at VDD = 400 V). Its gate plateau voltage of 5.4 V ensures stable turn-on under varying drive conditions.

The integrated body diode delivers VSD = 0.9 V at IF = 1.1 A and trr = 187 ns with Qrr = 0.8 µC, supporting soft-switching in QR flyback topologies. Commutation robustness is confirmed by EAS = 11 mJ (single-pulse avalanche) and reverse dv/dt rating of 15 V/ns.

Key Specifications

Parameter Value and Actual Design Meaning
VDS max 700 V - supports primary-side operation in 230 VAC-input QR flyback designs with margin against line surges.
RDS(on) max 2.00 Ω @ Tj = 150 °C - enables low conduction loss in compact, thermally constrained adapters.
Qg 7.8 nC - reduces gate drive power and allows use of low-cost, low-current drivers in high-frequency (>100 kHz) operation.
Eoss 0.85 µJ @ 400 V - minimizes turn-off energy loss and improves light-load efficiency in resonant topologies.
RthJC 2.95 °C/W - enables direct heatsinking via drain-tab mounting, critical for power density in space-limited chargers.
trr 187 ns - limits diode recovery-related switching loss and EMI in QR flyback during zero-voltage switching transitions.
ID,pulse 6.3 A - supports peak current handling during startup and transient overload without derating.

Pinout & Package

Package: PG-TO251 (IPAK SL), surface-mount, drain-connected metal tab for thermal and electrical connection.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control terminal Receives gate drive signal; requires <20 V absolute max rating; low input capacitance (Ciss = 163 pF) eases driver design.
Pin 2 (Drain) High-voltage power terminal Connected internally to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential.
Pin 3 (Source) Reference node for gate drive and current sensing Serves as return path for load current and gate drive loop; low-inductance layout essential for EMI control.

Key Features

Feature Design Value
Superjunction architecture Enables 700 V breakdown with RDS(on) × Qg figure-of-merit optimized for cost-sensitive, high-efficiency flyback SMPS.
High commutation ruggedness dv/dt = 50 V/ns (MOSFET) and 15 V/ns (diode) - prevents false turn-on in high-dV/dt QR environments without snubbers.
Low Eoss and Qgd Eoss = 0.85 µJ, Qgd = 4.3 nC - reduces turn-off loss and improves ZVS behavior in resonant converters.
Pb-free plating & halogen-free compound Meets RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 - suitable for lead-free reflow assembly.

Applications

USB-C Mobile Chargers Power Tool Battery Adapters

Use Scenario: 20–30 W quasi-resonant flyback converter operating at 65–130 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side high-voltage switch; synchronized with controller IC (e.g., ICE5QSxG) for valley-switching detection.

Use Value: Low Eoss and fast trr reduce switching loss by >15% vs. legacy SJ-MOSFETs, enabling 90%+ efficiency at full load.

Use Scenario: 36–48 V output adapter for cordless drill battery packs, requiring high reliability under intermittent surge loads.

IC Role / Device Role / Timing Role: Main power switch in primary-side regulation topology; handles repetitive 6.3 A pulse currents during motor startup.

Use Value: EAS = 11 mJ and IAR = 0.4 A ensure robustness against inductive kickback without external clamping.

LED Driver Power Supplies Industrial Sensor Power Modules

Use Scenario: Constant-voltage LED driver for commercial downlights, operating in enclosed fixtures with ambient temperatures up to 70 °C.

IC Role / Device Role / Timing Role: High-side switching element in single-stage flyback with integrated PFC emulation.

Use Value: RthJC = 2.95 °C/W and Tj,max = 150 °C allow direct tab-to-heatsink mounting, eliminating thermal interface material in cost-sensitive designs.

Use Scenario: Isolated 5 V/12 V auxiliary supply in industrial PLC I/O modules, subject to EN 61000-4-5 surge testing.

IC Role / Device Role / Timing Role: Primary switch in reinforced-insulation flyback with 4 kV AC isolation barrier.

Use Value: V(BR)DSS = 700 V provides 2× margin over 400 VDC bus transients, meeting IEC 62368-1 creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP60R1K0CE 600 V rating, RDS(on) = 1.00 Ω, Qg = 12.5 nC - lower voltage, higher conduction loss, higher gate charge. Restricted to 115 VAC-only or DC-fed inputs; unsuitable for universal AC input with surge margin. Select only when input voltage is limited to ≤ 170 VAC and board space permits larger heatsink for higher RDS(on).
IPW60R099C6 600 V rating, RDS(on) = 0.099 Ω, Qg = 42 nC - significantly lower on-resistance but much higher gate charge and cost. Over-specified for ≤30 W applications; introduces excessive gate drive loss and layout complexity. Prefer only in >65 W QR flyback where conduction loss dominates and gate driver capability supports 42 nC.

Compared with IPP60R1K0CE and IPW60R099C6, IPS70R2K0CEE8211AKMA1 uniquely balances 700 V capability, sub-2 Ω on-resistance, and ultra-low 7.8 nC gate charge - making it the optimal choice for cost-constrained, universal-input, 20–40 W QR flyback designs requiring both efficiency and ruggedness.

Availability

IPS70R2K0CEE8211AKMA1 is available at Aetrix Electronics and suitable for USB-C mobile chargers, power tool battery adapters, and LED driver power supplies requiring stable component supply across production lifecycles.

Supply support for IPS70R2K0CEE8211AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CE family - engineered specifically for cost-sensitive, high-efficiency AC/DC conversion in consumer and lighting applications, emphasizing ease of drive and system-level efficiency over raw performance headroom.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (ID) is 2.6 A at TC = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (RthJC = 2.95 °C/W) and maximum junction temperature (Tj,max = 150 °C), ensuring safe operation under sustained load in compact enclosures.

Does this MOSFET require a negative gate turn-off voltage?

No. The datasheet specifies gate-source voltage limits of ±20 V (static) and ±30 V (dynamic), with no requirement for negative turn-off bias. Gate drive can be implemented with a simple 0 V / +12 V or 0 V / +15 V supply, as the device exhibits stable threshold voltage (VGS(th) = 2.5–3.5 V) and low gate charge (7.8 nC), minimizing risk of spurious turn-on.

Can the drain tab be electrically connected to the PCB ground plane?

No - the drain is internally connected to the metal tab, so direct connection to PCB ground creates a short circuit unless the entire system reference is at drain potential. For thermal management, mount the tab to an isolated heatsink or use insulating thermal pads; routing the drain net on inner layers beneath the tab is mandatory for safety and isolation compliance.

Is this part suitable for hard-switched PFC boost stages?

No. While rated for 700 V, the CoolMOS™ CE series is optimized for soft-switched topologies like QR flyback. Its Qgd/Qg ratio (4.3/7.8 ≈ 55%) and Coss (14 pF) are not tuned for high-duty-cycle, hard-switched PFC, where Coss energy loss dominates. Infineon's C7 series (e.g., IPW60R041C7) is recommended for continuous conduction mode PFC.

IPS70R2K0CEE8211AKMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IPS70R2K0CEE8211AKMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPS70R2K0CEE8211AKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPS70R2K0CEE8211AKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS70R2K0CEE8211AKMA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IPS70R2K0CEE8211AKMA1?

For technical support, including IPS70R2K0CEE8211AKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS70R2K0CEE8211AKMA1 requirements.

6.How does Aetrix verify that IPS70R2K0CEE8211AKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS70R2K0CEE8211AKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS70R2K0CEE8211AKMA1 meets industry standards.

7.What is the process for return or replacement of IPS70R2K0CEE8211AKMA1?

All IPS70R2K0CEE8211AKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS70R2K0CEE8211AKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS70R2K0CEE8211AKMA1 part is unused and in its original packaging.

Return procedure for IPS70R2K0CEE8211AKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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