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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPSA70R1K2P7SAKMA1

Name: IPSA70R1K2P7SAKMA1
Brand: Infineon Technologies
SKU: IPSA70R1K2P7SAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPSA70R1K2P7SAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPSA70R1K2P7SAKMA1.pdf

Description:: MOSFET N-CH 700V 4.5A TO251-3

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Product details

Overview

IPSA70R1K2P7SAKMA1 from Infineon Technologies is a 700 V, 1.2 Ω R_DS(on) CoolMOS™ P7 superjunction power MOSFET in PG-TO251 (IPAK-short lead with ISO-Standoff) package, featuring 4.8 nC total gate charge, 0.7 µJ E_oss at 400 V, and integrated ESD protection (HBM Class 1C), optimized for flyback converters in AC/DC adapters and LED lighting.

For engineers reviewing the IPSA70R1K2P7SAKMA1 datasheet, IPSA70R1K2P7SAKMA1 pinout, IPSA70R1K2P7SAKMA1 application, or IPSA70R1K2P7SAKMA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, E_oss-driven switching loss at >100 kHz, thermal resistance (R_thJC = 5.0 °C/W), and gate threshold stability across temperature (V_GS(th) = 2.5–3.5 V).

Technical Context

This 700 V superjunction MOSFET employs charge compensation cell architecture to achieve low conduction and switching losses simultaneously. Its 1.2 Ω max R_DS(on) at T_j = 150 °C and 4.8 nC Q_g enable high-efficiency operation in discontinuous conduction mode (DCM) flyback topologies up to 150 kHz.

The device integrates an ultra-fast body diode with t_rr = 145 ns and Q_rr = 0.5 µC at 400 V, supporting soft-recovery in quasi-resonant designs. Its dv/dt ruggedness of 100 V/ns and 1.6 A single-pulse avalanche rating ensure robustness in high-noise consumer power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	700 V - Withstands full mains rectified voltage (e.g., 375 V DC bus + margin) in universal-input offline SMPS.
R_DS(on), max	1.2 Ω @ T_j = 150 °C - Enables <4.5 W conduction loss at 3 A RMS drain current in 20 W adapter designs.
Q_g, typ	4.8 nC - Reduces gate drive power and enables use of low-cost, low-current drivers (e.g., 100 mA peak).
E_oss	0.7 µJ @ 400 V - Low output energy minimizes turn-off loss and supports >100 kHz switching without excessive heatsinking.
V_GS(th), typ	3 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level controllers; stable over −40 to +150 °C.
R_thJC	5.0 °C/W - Allows 25 W power dissipation with ≤125 °C junction rise above 25 °C case temperature.
ESD Rating	HBM Class 1C (≥1 kV) - Integrated protection eliminates need for external ESD clamps in board-level handling.

Pinout & Package

Package: PG-TO251 (IPAK-short lead with ISO-Standoff Drain Pin). Tab is Drain (Pin 2), Gate is Pin 1, Source is Pin 3. ISO-Standoff isolates drain pad from PCB ground plane for enhanced creepage/clearance in safety-critical AC/DC designs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; low Q_g enables fast, low-loss switching with minimal driver stress.
Pin 2 (Drain / Tab)	High-voltage power input	ISO-Standoff design prevents direct solder contact to PCB; requires insulated mounting for reinforced isolation.
Pin 3 (Source)	Power return and reference	Serves as local ground reference for gate driver; connects to primary-side ground in flyback transformer topology.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	5.76 Ω·nC - Directly reduces combined conduction + switching loss, enabling >90% efficiency in 12–24 W chargers.
Low E_oss (0.7 µJ)	Reduces turn-off energy by >40% vs. prior CoolMOS™ P6 generation - critical for high-frequency QR flyback operation.
Integrated ESD protection diode	HBM Class 1C rating - Eliminates discrete TVS on gate line, saving BOM cost and PCB area in space-constrained adapters.
Thermal resistance R_thJC = 5.0 °C/W	Enables 25 W continuous dissipation with only 125 °C ΔT - supports compact heatsinkless designs in wall-plug applications.
Body diode t_rr = 145 ns	Minimizes reverse recovery overshoot and EMI in DCM flyback - allows direct replacement of FRD-assisted solutions.

Applications

USB-C Wall Charger

Smart LED Driver

Use Scenario: 30 W USB-C PD adapter operating in quasi-resonant flyback mode with 90–264 V AC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer; synchronized to controller's zero-voltage switching (ZVS) detection.

Use Value: Low E_oss and fast body diode enable ZVS across full load range, reducing audible noise and improving light-load efficiency by 2–3%.

Use Scenario: Dimmable constant-current LED driver for commercial downlights (24–48 V output, 350–700 mA).

IC Role / Device Role / Timing Role: Primary-side switch regulating output via optocoupler feedback; operates in DCM with variable frequency modulation.

Use Value: Stable V_GS(th) and low R_DS(on) drift ensure consistent dimming linearity and ±2% current regulation over temperature.

TV Power Supply

Wireless Charging Transmitter

Use Scenario: Auxiliary 12 V/1 A standby supply in 55-inch LCD TV, powered from main bulk capacitor.

IC Role / Device Role / Timing Role: Standby-mode flyback switch activated during low-power sleep state; duty cycle <5%.

Use Value: Ultra-low IDSS (<1 µA at 700 V, 150 °C) minimizes no-load input power to <150 mW, meeting Energy Star Tier 2 requirements.

Use Scenario: Resonant half-bridge transmitter stage in Qi v1.3 wireless charging pad (15 W EPP mode).

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge; driven with precise dead-time control to manage ZVS transitions.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during high di/dt resonant tank commutation, ensuring reliable burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD70R1K2P7	Same die, TO-252 (DPAK) package; R_thJA = 62 °C/W (leaded) vs. 5.0 °C/W (R_thJC) - higher thermal impedance in PCB-constrained layouts.	Lacks ISO-Standoff; requires minimum 4 mm creepage clearance on PCB - unsuitable for compact 2-layer adapter boards.	Select when board layout permits larger copper pour and creepage distance; lower cost but reduced power density.
STP70N10F7	700 V, 0.95 Ω R_DS(on), Q_g = 6.2 nC - 30% higher gate charge increases driver loss and limits max switching frequency to ~80 kHz.	No integrated ESD diode - requires external 1 kV HBM protection, adding component count and layout complexity.	Choose only if legacy qualification or dual-sourcing mandates STMicroelectronics; inferior FOM and ease-of-use vs. P7 platform.

Compared with IPD70R1K2P7 and STP70N10F7, IPSA70R1K2P7SAKMA1 delivers the lowest R_DS(on)×Q_g FOM (5.76 Ω·nC), highest dv/dt immunity (100 V/ns), and built-in ESD protection - making it optimal for slim, high-efficiency, high-volume consumer power supplies where thermal and layout constraints dominate.

Availability

IPSA70R1K2P7SAKMA1 is available at Aetrix Electronics and suitable for USB-C wall chargers, smart LED drivers, TV auxiliary supplies, and wireless charging transmitters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for IPSA70R1K2P7SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and sensor solutions, with core expertise in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency offline SMPS in consumer electronics - emphasizing low FOM, ease of use, and high power density.

FAQ

What is the maximum continuous drain current for IPSA70R1K2P7SAKMA1 at 100°C case temperature?

The maximum continuous drain current is 3.0 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is thermally limited by junction temperature (T_j ≤ 150 °C) and assumes proper PCB copper area for heat dissipation. At T_C = 25 °C, the rating rises to 4.5 A.

Does IPSA70R1K2P7SAKMA1 require an external gate resistor for safe operation in flyback converters?

Yes - a gate resistor (typically 8.2 Ω, as used in datasheet test conditions) is required to dampen ringing, control dV/dt, and limit peak gate current. The device's low Q_g (4.8 nC) makes it sensitive to parasitic oscillation without proper gate network design.

Can IPSA70R1K2P7SAKMA1 be paralleled with identical units to increase current capability?

Parallel operation is possible but requires careful layout: individual ferrite beads on each gate line and separate totem-pole drivers are recommended to prevent dynamic current imbalance. The datasheet explicitly notes this requirement due to parameter spread and thermal coupling effects.

Is the ISO-Standoff feature electrically isolated from the PCB in the PG-TO251 package?

Yes - the ISO-Standoff drain tab is mechanically elevated above the PCB surface and not soldered to it, providing reinforced insulation between high-voltage drain and low-voltage secondary side. This meets IEC/UL 62368-1 creepage and clearance requirements without additional insulating pads.

IPSA70R1K2P7SAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 4.8 nC @ 400 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 174 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPSA70R1K2P7SAKMA1 FAQ

1.How can I place an order for IPSA70R1K2P7SAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPSA70R1K2P7SAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPSA70R1K2P7SAKMA1 reliable?

The price and inventory of IPSA70R1K2P7SAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPSA70R1K2P7SAKMA1 is usually 5 days.

3.What payment methods are accepted for IPSA70R1K2P7SAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPSA70R1K2P7SAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPSA70R1K2P7SAKMA1?

IPSA70R1K2P7SAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPSA70R1K2P7SAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPSA70R1K2P7SAKMA1?

For technical support, including IPSA70R1K2P7SAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPSA70R1K2P7SAKMA1 requirements.

6.How does Aetrix verify that IPSA70R1K2P7SAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPSA70R1K2P7SAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPSA70R1K2P7SAKMA1 meets industry standards.

7.What is the process for return or replacement of IPSA70R1K2P7SAKMA1?

All IPSA70R1K2P7SAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPSA70R1K2P7SAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPSA70R1K2P7SAKMA1 part is unused and in its original packaging.

Return procedure for IPSA70R1K2P7SAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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