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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPSA70R2K0CEAKMA1

Name: IPSA70R2K0CEAKMA1
Brand: Infineon Technologies
SKU: IPSA70R2K0CEAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPSA70R2K0CEAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPSA70R2K0CEAKMA1.pdf

Description:: MOSFET N-CH 700V 4A TO251-3

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Product details

Overview

IPSA70R2K0CEAKMA1 from Infineon Technologies is a 700 V, 2.0 Ω (max) CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK-short lead with ISO-Standoff Drain) package, rated for 4 A continuous drain current at 25°C and optimized for quasi-resonant flyback converters in low-power chargers. It delivers 7.8 nC total gate charge, 0.85 µJ output switching energy at 400 V, and features high commutation ruggedness (500 A/µs di/dt, 15 V/ns reverse diode dv/dt).

For engineers reviewing the IPSA70R2K0CEAKMA1 datasheet, IPSA70R2K0CEAKMA1 pinout, IPSA70R2K0CEAKMA1 application, or IPSA70R2K0CEAKMA1 equivalent, key selection criteria include its 700 V breakdown voltage, 2.0 Ω R_DS(on) at 10 V_GS, standoff-isolated drain pin, ease of gate drive (5.4 V plateau), and qualification for standard-grade consumer and lighting applications.

Technical Context

This CoolMOS™ CE device implements a superjunction architecture enabling significantly lower R_DS(on) × Q_g figure-of-merit than conventional planar MOSFETs while maintaining robust avalanche capability (11 mJ single-pulse E_AS) and high dv/dt immunity (50 V/ns MOSFET, 15 V/ns diode). Its 2.95 °C/W junction-to-case thermal resistance supports compact heatsinking in space-constrained adapters.

The integrated body diode exhibits 187 ns reverse recovery time and 0.8 µC Q_rr at 400 V, enabling reliable operation in QR flyback topologies without external snubbers. The ISO-Standoff Drain Pin (Pin 2) provides reinforced creepage/clearance for primary-side isolation compliance in Class II AC/DC designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	700 V - Withstands full mains rectified voltage (e.g., 375 V DC + 100% surge) in universal-input flyback converters
R_DS(on), max	2.00 Ω @ T_j = 25°C - Enables low conduction loss in 5–20 W charger designs with minimal heatsink requirement
Q_g, typ	7.8 nC - Reduces gate driver power loss and simplifies 5–12 V gate drive design without requiring high-current buffers
E_oss @ 400 V	0.85 µJ - Low stored output capacitance energy minimizes switching loss during zero-voltage switching transitions
T_j max	150 °C - Supports operation in sealed enclosures with ambient temperatures up to 85 °C under derated conditions
I_D, cont	4 A @ T_C = 25°C - Sufficient for peak currents in 15–20 W QR flyback designs with 50% duty cycle limitation
R_thJC	2.95 °C/W - Allows direct mounting to PCB copper pour or small metal heatsink for thermal management

Pinout & Package

IPSA70R2K0CEAKMA1 uses the PG-TO251 (IPAK-short lead) package with ISO-Standoff Drain configuration. The molded plastic case isolates the drain pin (Pin 2) from the tab and other leads, enabling enhanced creepage distance for safety-critical primary-side switching.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Gate	Exposed metal tab serves as gate terminal - requires insulated mounting or non-conductive thermal interface to prevent shorting
Pin 2	Drain (ISO-Standoff)	Electrically isolated drain lead with extended creepage path - enables reinforced insulation without additional slotting or barriers
Pin 3	Source	Low-impedance source connection - ties directly to primary ground plane and gate driver return path

Key Features

Feature	Design Value
Extremely low FOM (R_DS(on) × Q_g)	15.6 Ω·nC - Delivers best-in-class efficiency for cost-sensitive 5–20 W QR flyback converters
High commutation ruggedness	500 A/µs di/dt and 15 V/ns reverse diode dv/dt - Ensures reliable hard-switching and QR transitions without oscillation or failure
Easy gate drive	5.4 V gate plateau voltage - Compatible with standard 6–12 V controllers without level-shifting or gate boost circuits
Halogen-free & Pb-free	RoHS-compliant plating and mold compound - Meets environmental requirements for global consumer electronics shipments
Standard grade qualification	Rated for T_j = –40 to 150 °C - Suitable for commercial and industrial ambient environments without extended temperature screening

Applications

USB-C Wall Charger

LED Driver for Smart Bulbs

Use Scenario: 18 W USB-C PD adapter with QR flyback topology operating across 90–264 V_AC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer timing and regulating output via optocoupler feedback.

Use Value: 2.0 Ω R_DS(on) and 0.85 µJ E_oss enable >90% efficiency at 230 V_AC, while ISO-Standoff Drain satisfies IEC 62368-1 clearance requirements.

Use Scenario: Dimmable 12 W LED driver for E26/A19 smart bulbs using TRIAC-dimmable QR flyback.

IC Role / Device Role / Timing Role: Main switching transistor synchronized to valley-switching control for flicker-free dimming performance.

Use Value: 700 V rating tolerates line surges during phase-cut dimmer transitions; 187 ns t_rr prevents false triggering of dimmer circuitry.

Power Tool Battery Charger

Set-Top Box Standby Supply

Use Scenario: 20 V/2 A fast-charging dock for cordless drills with wide-input QR flyback and active PFC front-end.

IC Role / Device Role / Timing Role: High-efficiency primary switch handling burst-mode operation during light-load standby and full-power charging cycles.

Use Value: 4 A I_D rating supports 20 W peak power; 150 °C T_j max ensures reliability during repeated thermal cycling in garage environments.

Use Scenario: 3.3 V/0.5 A always-on auxiliary supply in hybrid STB with dual-mode (active/standby) operation.

IC Role / Device Role / Timing Role: Low-quiescent-loss primary switch operating in deep burst mode (<100 mW no-load input) with adaptive frequency scaling.

Use Value: 10 µA I_DSS at 700 V and 7.8 nC Q_g minimize no-load consumption and improve EU CoC Tier 2 compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD70R2K0CE	Same die, TO-252 (DPAK) package - no ISO-Standoff Drain, 3.5 °C/W R_thJC	Lacks reinforced isolation; requires PCB slotting or barrier for same creepage; better for non-safety-critical or secondary-side use	Select when board space allows DPAK and isolation is managed externally; avoid in Class II-only designs
STP70N10F7	100 V device, 10 mΩ R_DS(on), 38 nC Q_g - not voltage-compatible for 700 V applications	Only suitable for low-voltage DC-DC stages; cannot replace in primary-side flyback	Not a functional substitute - only consider for secondary-side synchronous rectification or post-regulation stages

Compared with IPD70R2K0CE, IPSA70R2K0CEAKMA1 provides superior isolation integrity for compact AC/DC adapters; versus STP70N10F7, it enables direct mains-referenced switching where 700 V blocking is mandatory - making it irreplaceable in primary-side QR flyback implementations.

Availability

IPSA70R2K0CEAKMA1 is available at Aetrix Electronics and suitable for USB-C wall chargers, smart LED drivers, power tool battery chargers, and set-top box auxiliary supplies requiring stable component supply and long-term production continuity.

Supply support for IPSA70R2K0CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap technologies.

This part belongs to the CoolMOS™ CE platform - engineered specifically for cost-optimized, high-efficiency quasi-resonant flyback converters in consumer and lighting applications where 700 V blocking and low R_DS(on) × Q_g are critical.

FAQ

What is the maximum recommended gate resistor value for stable switching?

The datasheet specifies 10.2 Ω gate resistor for characterization (td(on)/td(off) test conditions). For stable operation in QR flyback, a 10–22 Ω non-inductive resistor is recommended to balance switching speed and EMI. Values above 33 Ω increase turn-off delay beyond 35 ns and risk shoot-through in synchronous configurations.

Does the ISO-Standoff Drain require special PCB layout considerations?

Yes - the ISO-Standoff Drain (Pin 2) must be routed with ≥4 mm creepage distance to any other conductor on the primary side. Avoid solder mask over the standoff region; use minimum 0.3 mm air gap between Pin 2 and adjacent traces or pads. Do not place thermal vias directly under the standoff section.

Can this MOSFET be used in continuous conduction mode (CCM) flyback?

No - the device is characterized and qualified for quasi-resonant (QR) and discontinuous conduction mode (DCM) operation only. Its 6.3 A pulsed current rating and SOA limits do not support sustained CCM operation above 2 A, where secondary-side stress and thermal runaway risk increase significantly.

Is the body diode suitable for synchronous rectification?

No - the body diode has 187 ns t_rr and 0.8 µC Q_rr, which cause excessive reverse recovery loss and voltage spikes in secondary-side synchronous rectification. It is intended solely for primary-side switching; external Schottky or GaN FETs are required for secondary-side SR.

IPSA70R2K0CEAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 7.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 163 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPSA70R2K0CEAKMA1 FAQ

1.How can I place an order for IPSA70R2K0CEAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPSA70R2K0CEAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPSA70R2K0CEAKMA1 reliable?

The price and inventory of IPSA70R2K0CEAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPSA70R2K0CEAKMA1 is usually 5 days.

3.What payment methods are accepted for IPSA70R2K0CEAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPSA70R2K0CEAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPSA70R2K0CEAKMA1?

IPSA70R2K0CEAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPSA70R2K0CEAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPSA70R2K0CEAKMA1?

For technical support, including IPSA70R2K0CEAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPSA70R2K0CEAKMA1 requirements.

6.How does Aetrix verify that IPSA70R2K0CEAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPSA70R2K0CEAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPSA70R2K0CEAKMA1 meets industry standards.

7.What is the process for return or replacement of IPSA70R2K0CEAKMA1?

All IPSA70R2K0CEAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPSA70R2K0CEAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPSA70R2K0CEAKMA1 part is unused and in its original packaging.

Return procedure for IPSA70R2K0CEAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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