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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT029N08N5ATMA1

Name: IPT029N08N5ATMA1
Brand: Infineon Technologies
SKU: IPT029N08N5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT029N08N5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT029N08N5ATMA1.pdf

Description:: MOSFET N-CH 80V 52A/169A HSOF-8

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Product details

Overview

IPT029N08N5ATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in HSOF-8 package, rated for 80 V V_DS, 2.9 mΩ R_DS(on) max at V_GS = 10 V, and 169 A continuous drain current at T_C = 25 °C. It delivers high-frequency switching performance with 70 nC total gate charge and 83 nC output charge, optimized for synchronous rectification in DC-DC converters.

For engineers reviewing the IPT029N08N5ATMA1 datasheet, IPT029N08N5ATMA1 pinout, IPT029N08N5ATMA1 application, or IPT029N08N5ATMA1 equivalent, key selection criteria include its low R_DS(on) × Q_G figure-of-merit (FOM), 100% avalanche-tested ruggedness, JEDEC-qualified reliability, and thermal resistance of 0.9 K/W (junction-to-case).

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching speed. Its gate threshold voltage (2.2–3.8 V) ensures robust noise immunity and stable turn-on behavior across temperature, and its 4.9 V gate plateau supports precise timing control in hard-switched topologies.

The MOSFET integrates a low-V_SD body diode (0.92–1.2 V at 100 A) with 84–168 ns reverse recovery time and 175–350 nC Q_rr, enabling efficient synchronous rectification without external Schottky diodes in buck and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for primary-side switching in 48 V input systems and secondary-side sync rectification up to 60 V output rails.
R_DS(on), max	2.9 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 150 A, critical for high-current server VRMs and telecom POL converters.
Q_G	70 nC - Low gate drive energy reduces controller IC loading and enables >1 MHz operation with minimal driver losses.
Q_OSS	83 nC - Limits capacitive turn-off loss and improves efficiency in hard-switched applications like phase-shifted full-bridge.
E_AS	124 mJ - Confirmed single-pulse avalanche capability supports robustness against inductive load transients and short-circuit events.
R_thJC	0.9 K/W - Enables direct heatsink mounting for high-power density designs; allows 167 W dissipation at T_C = 25 °C.
V_GS(th)	2.2–3.8 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting.

Pinout & Package

Package: PG-HSOF-8 (Heat Sink Overlaid Flatlead), thermally enhanced surface-mount package with exposed drain tab for direct PCB copper thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Exposed metal pad soldered to large PCB copper area; carries full load current and serves as primary thermal path to heatsink.
Pin 1	Gate	Control terminal; accepts 0–10 V logic-level drive; requires low-inductance layout due to 70 nC Q_G.
Pins 2–8	Source	Common source node; all eight pins internally bonded to source metallization for low-inductance, high-current return path.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_G FOM	203 mΩ·nC - Reduces combined conduction and switching losses in high-frequency (>500 kHz) DC-DC stages.
100% avalanche tested	124 mJ single-pulse rating - Eliminates need for external clamping in flyback or forward converter primary switches.
JEDEC-qualified reliability	Complies with J-STD-20 reflow and JESD22 stress standards - Validated for industrial and telecom equipment with 10+ year field life.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 - Supports environmentally regulated markets including EU and China RoHS II.

Applications

Server Voltage Regulator Module (VRM)

Telecom 48 V Intermediate Bus Converter

Use Scenario: High-current, multiphase buck converter delivering 50–200 A at 0.8–1.8 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating in continuous conduction mode (CCM) at 500–1000 kHz.

Use Value: 2.9 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 4.5 mΩ devices, directly improving VRM efficiency above 90% at full load.

Use Scenario: Isolated half-bridge or full-bridge DC-DC converter stepping 48 V input down to 12 V/24 V for base station RF modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch with hard-switching operation and active clamp support.

Use Value: 124 mJ E_AS withstands transformer leakage inductance spikes during ZVS transitions, reducing snubber losses and component count.

Industrial Motor Drive Inverter Stage

EV On-Board Charger (OBC) LLC Resonant Rectifier

Use Scenario: 3-phase inverter stage driving 1–5 kW PMSM/BLDC motors in servo drives and HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module replacement design.

Use Value: 139 A diode forward current rating and 84 ns t_rr enable zero-voltage switching (ZVS) assist in bidirectional energy recovery during PWM dead-time.

Use Scenario: Secondary-side synchronous rectifier in 3.3–6.6 kW bidirectional OBC using LLC topology.

IC Role / Device Role / Timing Role: Fast-recovery body diode-assisted rectifier with gate-driven synchronous turn-on.

Use Value: 0.92 V V_SD and 175 nC Q_rr reduce reverse recovery loss by >50% versus discrete Schottky solutions, improving OBC efficiency at light load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB029N08N5	Same die, TO-263-7 package; higher R_thJA (40 K/W vs. 62 K/W on PCB); no integrated drain tab.	Better suited for bolt-down heatsink mounting; less optimal for compact, double-sided PCB thermal management.	Select when mechanical mounting constraints favor through-hole or screw-down heatsinks over planar PCB copper cooling.
STL220N8F7	80 V, 2.2 mΩ R_DS(on), but 95 nC Q_G; higher FOM (209 mΩ·nC); not 100% avalanche tested.	Limited ruggedness margin in high-dV/dt motor drive or surge-prone telecom environments.	Prefer only where peak efficiency at light load outweighs transient reliability requirements.

Compared with IPB029N08N5 and STL220N8F7, IPT029N08N5ATMA1 uniquely balances ultra-low R_DS(on), industry-leading FOM, and full avalanche qualification in a thermally optimized surface-mount package-making it optimal for space-constrained, high-reliability power stages requiring both efficiency and robustness.

Availability

IPT029N08N5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and EV on-board charger rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPT029N08N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and electric vehicle infrastructure where thermal density and switching loss dominate system design.

FAQ

What is the maximum recommended gate resistor value for IPT029N08N5ATMA1 in a 1 MHz synchronous buck converter?

A 1.8 Ω external gate resistor is validated in the datasheet for 100 A switching with 20 ns turn-on delay and 12 ns rise time. For 1 MHz operation, values between 1.5 Ω and 2.2 Ω maintain safe dV/dt (<50 V/ns) while minimizing switching loss; lower values risk shoot-through in multiphase layouts.

Does IPT029N08N5ATMA1 require a negative gate voltage for reliable turn-off in high-noise motor drive environments?

No. Its gate threshold voltage (2.2–3.8 V) and 20 V maximum V_GS rating allow robust turn-off with 0 V gate drive. The device's 100% avalanche test and low Crss (36–63 pF) provide inherent noise immunity; negative bias is unnecessary unless operating above 150 °C junction temperature.

Can IPT029N08N5ATMA1 be used in parallel configurations for >300 A applications?

Yes-its positive temperature coefficient for R_DS(on) (see Diagram 9) ensures current sharing stability. Parallel operation requires matched gate drive loop inductance (<10 nH difference) and symmetrical PCB copper thermal paths; derate total current by 15% for six-device arrays per Infineon AN2015-05.

Is the drain tab electrically isolated from the PCB substrate in HSOF-8 mounting?

No-the drain tab is electrically connected to the internal drain metallization and must be isolated from other PCB layers via solder mask clearance and non-conductive thermal interface material if mounted to a grounded heatsink. The datasheet specifies minimum creepage/clearance distances of 1.5 mm for 80 V isolation.

IPT029N08N5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 52A (Ta), 169A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 150A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 168W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-1

IPT029N08N5ATMA1 FAQ

1.How can I place an order for IPT029N08N5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT029N08N5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT029N08N5ATMA1 reliable?

The price and inventory of IPT029N08N5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT029N08N5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPT029N08N5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT029N08N5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT029N08N5ATMA1?

IPT029N08N5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT029N08N5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT029N08N5ATMA1?

For technical support, including IPT029N08N5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT029N08N5ATMA1 requirements.

6.How does Aetrix verify that IPT029N08N5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT029N08N5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT029N08N5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT029N08N5ATMA1?

All IPT029N08N5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT029N08N5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT029N08N5ATMA1 part is unused and in its original packaging.

Return procedure for IPT029N08N5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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