Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT039N15N5ATMA1

Name: IPT039N15N5ATMA1
Brand: Infineon Technologies
SKU: IPT039N15N5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPT039N15N5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT039N15N5ATMA1.pdf

Description:: OPTIMOS 5 POWER MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,504

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPT039N15N5ATMA1 from Infineon is an N-channel 150 V OptiMOS™ 5 power MOSFET in PG-HSOF-8 (TOLL) package, rated for 190 A continuous drain current at T_C = 25 °C, with R_DS(on) = 3.9 mΩ max at V_GS = 10 V and Q_g = 78 nC. It features 100% avalanche tested ruggedness, ultra-low thermal resistance (R_thJC = 0.47 °C/W), and is qualified for industrial applications.

For engineers reviewing the IPT039N15N5ATMA1 datasheet, IPT039N15N5ATMA1 pinout, IPT039N15N5ATMA1 application, or IPT039N15N5ATMA1 equivalent, key selection criteria include its 150 V breakdown voltage, 3.9 mΩ on-resistance, 219 nC output charge, TOLL package thermal performance, and suitability for high-current DC-DC and motor drive switching stages.

Technical Context

This device employs Infineon's OptiMOS™ 5 trench-gate superjunction technology optimized for high-voltage, high-current switching with minimized conduction and switching losses. Its gate threshold voltage (V_GS(th) = 3.0–4.6 V) enables robust 5 V logic-level drive compatibility while maintaining noise immunity.

The MOSFET integrates a low-loss body diode with t_rr = 53.4–106.8 ns and Q_rr = 77.2–154.4 nC, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by the exposed drain tab in the TOLL package and R_thJC = 0.47 °C/W, allowing direct heatsink mounting without isolation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V–96 V bus systems and 100 V-class industrial supplies.
R_DS(on) max	3.9 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-efficiency power stages.
I_D cont	190 A @ T_C = 25 °C - Supports high-current motor phases or server VRMs without parallel devices.
Q_g	78 nC - Determines gate driver power requirement; compatible with standard 2 A peak drivers for ≤100 kHz switching.
R_thJC	0.47 °C/W - Allows >300 W power dissipation with modest heatsinking, enabling compact thermal design.
E_AS	255 mJ - Confirmed single-pulse avalanche energy rating ensures reliability under inductive load turn-off stress.
Q_oss	219 nC - Defines output capacitance charge; impacts zero-voltage switching (ZVS) feasibility and turn-off loss.

Pinout & Package

Supplied in PG-HSOF-8 (TOLL) package: thermally enhanced surface-mount outline with exposed drain tab on bottom side for direct heatsink attachment. Dimensions: 9.9 mm × 7.9 mm × 1.9 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Exposed copper pad on underside; primary thermal path and high-current return path-must be soldered to large PCB copper pour or heatsink.
Gate (Pin 1)	Control terminal	Low-impedance input requiring <2 A peak drive; sensitive to ringing-requires local gate resistor and Kelvin source routing.
Source (Pins 2–8)	Reference node for gate drive and current sensing	Parallel pins reduce source inductance; essential for stable high-dI/dt operation and accurate R_DS(on)-based current monitoring.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Delivers 3.9 mΩ R_DS(on) at 150 V, achieving best-in-class figure-of-merit (R_DS(on) × Q_g) for industrial-grade HV MOSFETs.
100% avalanche tested	Guarantees robustness against inductive switching transients without derating-no additional snubbers required in motor drive H-bridges.
TOLL package thermal performance	R_thJC = 0.47 °C/W enables >300 W continuous power handling with passive cooling, reducing need for forced air or liquid solutions.
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21, supporting environmentally regulated industrial and automotive-adjacent deployments.
Industrial qualification	Fully JEDEC-qualified for extended temperature range (−55 °C to +175 °C), ensuring reliability in factory automation and UPS systems.

Applications

Motor Drive Inverter Stage

Server VRM High-Side Switch

Use Scenario: Three-phase BLDC inverter for industrial pumps operating at 48–72 V bus with 150 A peak phase current.

IC Role / Device Role / Timing Role: High-side N-channel power switch in 6-pack half-bridge configuration, switching at 20–40 kHz with PWM-controlled torque.

Use Value: 3.9 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 150 V MOSFETs, enabling smaller heatsinks and higher power density.

Use Scenario: Primary high-side switch in 48 V input → 1 V/300 A output multiphase buck converter for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in interleaved buck stage, driven by dedicated gate controller with adaptive dead-time control.

Use Value: Low Q_oss (219 nC) and fast t_f (5.4 ns) minimize turn-off loss and improve light-load efficiency above 92%.

Uninterruptible Power Supply (UPS) Output Stage

EV Onboard Charger (OBC) PFC Switch

Use Scenario: 5 kVA double-conversion UPS delivering clean 230 VAC output from 384 VDC battery bank.

IC Role / Device Role / Timing Role: Full-bridge inverter switch handling 20–50 kHz sinusoidal PWM with bidirectional current capability via integrated body diode.

Use Value: 255 mJ E_AS withstands repeated line-surge events and battery reversal transients without failure.

Use Scenario: Boost switch in 6.6 kW two-stage OBC PFC front-end operating at 70 kHz with 400 VDC output.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch in continuous conduction mode (CCM) boost topology with active clamp.

Use Value: Optimized C_iss/C_oss ratio (5900 pF / 1500 pF) supports ZVS across wide load range, reducing EMI and improving efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB039N15N5	Same die, but in TO-263 (D²PAK) package; R_thJC = 0.55 °C/W; larger footprint; no Kelvin source pins.	Preferred where manual assembly or through-hole rework is needed; less optimal for >100 kHz due to higher source inductance.	Select when thermal margin allows larger package and board space is available; avoid in ultra-dense motor drive modules.
STL220N15F7	150 V, 220 A, R_DS(on) = 3.5 mΩ, but Q_g = 105 nC; TSDSON-8 package; R_thJC = 0.50 °C/W.	Better conduction loss but higher switching loss; requires stronger gate driver; lower avalanche rating (E_AS = 190 mJ).	Choose only if conduction loss dominates system loss budget and gate drive capability supports 105 nC charge.

Compared with IPB039N15N5 and STL220N15F7, IPT039N15N5ATMA1 offers superior switching efficiency (lower Q_g and Q_oss) and best-in-class thermal resistance, making it optimal for high-frequency, space-constrained industrial inverters where both loss and thermal management are critical.

Availability

IPT039N15N5ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, uninterruptible power supplies, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPT039N15N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-power-density industrial and computing power conversion, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum recommended gate drive voltage for IPT039N15N5ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the recommended operating range is 10 V to 15 V for reliable R_DS(on) optimization and long-term gate oxide integrity. Driving above 15 V yields diminishing R_DS(on) improvement while increasing risk of gate overvoltage during transients.

Can IPT039N15N5ATMA1 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) and matched dynamic parameters enable stable current sharing. Use identical gate trace lengths, individual gate resistors (≤5 Ω), and Kelvin source connections. Derate total current by 15% for thermal imbalance in multi-device layouts.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode has t_rr = 53.4–106.8 ns and Q_rr = 77–154 nC, enabling use in synchronous buck topologies up to 100 kHz. However, external Schottky diodes are preferred for >150 kHz or where reverse recovery noise must be minimized.

Does IPT039N15N5ATMA1 require a gate driver with negative turn-off capability?

No-its V_GS(th) (3.0–4.6 V) and low Miller plateau voltage (5.3 V typ.) allow clean turn-off with 0 V gate drive. A negative turn-off (e.g., −5 V) is unnecessary but may improve dV/dt immunity in noisy environments with high parasitic inductance.

IPT039N15N5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 190A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 257µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7700 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 319W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8

IPT039N15N5ATMA1 FAQ

1.How can I place an order for IPT039N15N5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT039N15N5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT039N15N5ATMA1 reliable?

The price and inventory of IPT039N15N5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT039N15N5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPT039N15N5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT039N15N5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT039N15N5ATMA1?

IPT039N15N5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT039N15N5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT039N15N5ATMA1?

For technical support, including IPT039N15N5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT039N15N5ATMA1 requirements.

6.How does Aetrix verify that IPT039N15N5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT039N15N5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT039N15N5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT039N15N5ATMA1?

All IPT039N15N5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT039N15N5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT039N15N5ATMA1 part is unused and in its original packaging.

Return procedure for IPT039N15N5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.