Infineon Technologies IPT043N15N5ATMA1

Overview

IPT043N15N5ATMA1 from Infineon Technologies is a 150 V, 4.3 mΩ, 100 A (T_C = 25°C) N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IPT043N15N5ATMA1 datasheet, IPT043N15N5ATMA1 pinout, IPT043N15N5ATMA1 application, or IPT043N15N5ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 97 nC, peak pulsed drain current of 360 A, and thermally enhanced TO-leadless package for high-power density designs.

Technical Context

This MOSFET employs Infineon's latest CoolMOS™ C7 technology, delivering reduced switching losses via low Q_gd/Q_g ratio (0.22) and fast turn-on/turn-off times (t_on = 25 ns, t_off = 55 ns). Its 150 V V_DSS rating supports 48 V and 60 V bus architectures with margin.

The device features integrated ESD protection (HBM Class 2), avalanche-rated operation (E_AS = 520 mJ), and gate threshold voltage V_GS(th) of 3.5 V (min) to ensure robust drive compatibility with standard 5 V and 3.3 V controllers.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 - Thermally enhanced, leadless surface-mount package with exposed drain pad for direct PCB thermal coupling and improved power cycling reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power MOSFET applications.

Compared with STW70N150K5 and IXFH100N15X3, IPT043N15N5ATMA1 delivers superior power density via its thermally optimized PG-HSOF-8 package and balanced R_DS(on)/Q_g trade-off-critical for space-constrained, air-cooled industrial and EV power modules.

Availability

IPT043N15N5ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and solar microinverters requiring stable component supply and long-lifecycle support.

Supply support for IPT043N15N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 30 years of high-reliability power device innovation.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and motor control systems operating above 100 kHz.

FAQ

What is the maximum recommended gate-source voltage for IPT043N15N5ATMA1?

The absolute maximum V_GS is ±20 V per Infineon's datasheet. Operation above +15 V or below −10 V risks permanent gate oxide damage. For reliable switching, use +12 V to +15 V turn-on and −5 V to 0 V turn-off to minimize Miller effect and ensure clean commutation in bridge circuits.

Does IPT043N15N5ATMA1 require a negative gate drive for optimal performance?

No negative gate drive is mandatory, but applying −5 V during turn-off reduces cross-conduction risk in half-bridge configurations by rapidly removing stored gate charge and suppressing dv/dt-induced false turn-on. The device's V_GS(th) of 3.5 V ensures safe blocking with 0 V gate bias.

Can IPT043N15N5ATMA1 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched gate loop inductance (<10 nH), symmetrical PCB layout, and individual gate resistors (10–22 Ω) to damp oscillation. Derate total current by 15% for thermal margin across 5 devices.

Is the PG-HSOF-8 package RoHS and REACH compliant?

Yes-Infineon certifies IPT043N15N5ATMA1 as fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including exemption 7a for lead in high-melting-temperature solder alloys used in internal die attach.