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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT60R065S7XTMA1

Name: IPT60R065S7XTMA1
Brand: Infineon Technologies
SKU: IPT60R065S7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT60R065S7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT60R065S7XTMA1.pdf

Description:: MOSFET N-CH 600V 8A 8HSOF

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Product details

Overview

IPT60R065S7XTMA1 from Infineon is a 600V, 8A (continuous), 126A pulsed superjunction MOSFET in HSOF-8 package with Kelvin Source pin, R_DS(on) = 65 mΩ at V_GS = 12 V and T_j = 25°C, optimized for static switching and high-current line rectification in SMPS, UPS, and solar inverters.

For engineers reviewing the IPT60R065S7XTMA1 datasheet, IPT60R065S7XTMA1 pinout, IPT60R065S7XTMA1 application, or IPT60R065S7XTMA1 equivalent, key selection criteria include low conduction loss (65 mΩ), high pulsed current capability (126 A), dv/dt ruggedness (20 V/ns), Kelvin Source for gate control fidelity, and MSL1-compliant TOLL packaging for industrial reflow reliability.

Technical Context

This CoolMOS™ S7 device uses charge-compensation superjunction architecture to achieve ultra-low R_DS(on) while maintaining robust 600V blocking capability and fast switching performance. Its internal body diode features low V_SD = 0.82 V and trr = 310 ns, enabling efficient hard-switched rectification without external freewheeling diodes.

The HSOF-8 package integrates a dedicated Kelvin Source terminal (Pin 2) separate from power source pins (3–8), decoupling gate drive return path from high-current source loop to minimize parasitic inductance and suppress Miller-induced turn-on during high di/dt commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on), max	65 mΩ at V_GS = 12 V, T_j = 25°C - enables <1.3 W conduction loss at 8 A, reducing heatsink requirements
V_(BR)DSS	600 V - supports universal AC input (85–265 VAC) and 400 VDC bus designs with margin
Q_g, typ	51 nC - determines gate driver power demand and switching speed trade-off in 50–100 kHz topologies
I_D,pulse	126 A - sustains short-circuit or inrush events in solid-state relays and circuit breakers
V_SD	0.82 V at I_F = 8 A - lowers forward conduction loss vs. standard silicon diodes in synchronous rectifier mode
dv/dt ruggedness	20 V/ns - ensures reliable operation under fast voltage transients without spurious turn-on
R_thJC	0.75 °C/W - allows direct thermal coupling to heatsink for >150 W continuous dissipation at T_C = 25°C

Pinout & Package

Package: PG-HSOF-8 (HSOF = High-Speed Outline Flat), surface-mount, MSL1, lead-free, with exposed drain tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-side power output / heat sink interface	Primary current path and thermal conduction path; electrically tied to all Drain pins
Pin 1 (Source)	Power source return	Main current-carrying source terminal; connects to PCB ground plane or bus bar
Pin 2 (Kelvin Source)	Gate drive reference	Low-inductance, isolated return for gate driver to eliminate source inductance effects on switching
Pin 3–8 (Source)	Parallel power source returns	Four additional source terminals (Pins 3–6) plus two more (Pins 7–8) reduce overall source resistance and improve current sharing
Gate (Pin not numbered separately)	Control input	Single gate pad located between Pin 1 and Pin 2; requires external gate resistor placement on Kelvin Source side per Infineon recommendation

Key Features

Feature	Design Value
Kelvin Source configuration	Separates gate drive return from high-current source path, eliminating Miller-induced false turn-on during high di/dt switching
65 mΩ R_DS(on) in HSOF-8	Lowest on-resistance per mm² among 600V SJ MOSFETs in this footprint, minimizing conduction loss and thermal stress
20 V/ns dv/dt ruggedness	Enables stable operation in noisy high-voltage environments without external snubbers or gate clamping
MSL1 reflow compatibility	Supports standard lead-free reflow profiles up to 260°C, eliminating moisture sensitivity handling constraints
Internal body diode with 310 ns trr	Permits use as self-commutated switch in bridge configurations without external diode paralleling

Applications

Solid-State Relay (SSR)

Line Rectification in Telecom PSU

Use Scenario: Replacing electromechanical relays in industrial PLC output modules requiring >1 million switching cycles and zero contact arcing.

IC Role / Device Role / Timing Role: Main power switch controlling AC/DC load current with zero-crossing or random-turn-on capability.

Use Value: Eliminates mechanical wear, bounce, and EMI from contact arcing; enables 10× longer lifetime and silent operation.

Use Scenario: High-efficiency 3.3 kW front-end rectification in telecom rectifiers operating at 50–60 kHz with PFC + LLC stages.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing diode bridges in active clamp or totem-pole PFC circuits.

Use Value: Reduces conduction loss by 40% vs. SiC Schottky diodes at 8 A, lowering system temperature rise by 12°C.

UPS Inverter Output Stage

Solar String Inverter DC-Link Switch

Use Scenario: Bidirectional 600 V, 32 A output stage in online double-conversion UPS systems with battery backup and grid synchronization.

IC Role / Device Role / Timing Role: Low-frequency (50/60 Hz) static switch managing battery-to-inverter and inverter-to-load paths.

Use Value: Supports 126 A pulsed current for surge loads; Kelvin Source ensures clean turn-off during fault interruption.

Use Scenario: DC-link switching in string inverters handling 1000 VDC PV arrays with rapid shutdown compliance and anti-islanding protection.

IC Role / Device Role / Timing Role: High-reliability, high-voltage isolation switch disconnecting PV strings during maintenance or fault conditions.

Use Value: 600 V rating with 20 V/ns dv/dt immunity prevents false triggering from grid transients or lightning surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage static switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R070CFD7	R_DS(on) = 70 mΩ; integrated CFD7 diode with trr = 190 ns; TO-247 package	Better reverse recovery but larger footprint and higher R_DS(on); suited for discrete TO-247 layouts with heatsink access	Choose when lower trr is critical and board space allows TO-247 mounting
STW62N60M2	R_DS(on) = 62 mΩ; no Kelvin Source; D²PAK package; Q_g = 65 nC	Lacks Kelvin Source, limiting high-di/dt reliability; higher gate charge increases driver loss at 100 kHz	Select only for cost-sensitive, non-paralleled, low-di/dt applications where layout cannot accommodate Kelvin routing

Compared with IPW60R070CFD7 and STW62N60M2, IPT60R065S7XTMA1 delivers superior price-performance in compact SMD designs requiring high pulsed current, dv/dt immunity, and gate drive fidelity-making it optimal for SSRs, solid-state breakers, and high-density rectifiers where Kelvin Source and HSOF-8 integration are decisive.

Availability

IPT60R065S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relays, telecom power supplies, and solar string inverters requiring stable component supply, long-term industrial qualification, and JEDEC-compliant manufacturing traceability.

Supply support for IPT60R065S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in CoolMOS™, OptiMOS™, and Aurix™ product families.

The CoolMOS™ S7 series targets low-frequency, high-current industrial switching applications-including SSRs, circuit breakers, and line rectification-where lowest R_DS(on) per package and robustness under voltage transients outweigh ultra-high-speed switching needs.

FAQ

What is the recommended gate resistor placement for IPT60R065S7XTMA1?

Infineon specifies that the gate resistor must be placed on the Kelvin Source (Pin 2) side-not the main Gate pad-to preserve the low-inductance gate drive loop. This prevents oscillation and false turn-on during high di/dt events. Typical values range from 4.7 Ω to 10 Ω depending on switching speed and EMI requirements.

Can IPT60R065S7XTMA1 replace standard 600V N-channel MOSFETs in existing TO-220 designs?

No-it uses an HSOF-8 surface-mount package incompatible with through-hole footprints. Direct replacement requires PCB redesign to accommodate the 8-pin flat lead frame and exposed drain tab. Thermal and layout benefits (Kelvin Source, low R_DS(on)) justify the redesign in new high-density or high-reliability applications.

Does IPT60R065S7XTMA1 require a negative gate voltage for reliable turn-off?

No. The device is fully specified for 0 V to +20 V gate drive (±30 V dynamic). A negative gate voltage is unnecessary for turn-off integrity due to its high dv/dt ruggedness (20 V/ns) and low gate threshold spread (3.5–4.5 V). Standard 0–12 V or 0–15 V drivers suffice.

Is the internal body diode suitable for synchronous rectification in continuous conduction mode?

Yes-the diode has V_SD = 0.82 V and trr = 310 ns at 8 A, making it viable for low-frequency (<100 kHz) synchronous rectification in PFC or LLC secondaries. However, for >200 kHz operation or ultra-low V_F demands, discrete SiC Schottky diodes remain preferable due to lower forward drop and zero reverse recovery.

IPT60R065S7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™S7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 12V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 8A, 12V

Vgs(th) (Max) @ Id:: 4.5V @ 490µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 12 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1932 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT60R065S7XTMA1 FAQ

1.How can I place an order for IPT60R065S7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT60R065S7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT60R065S7XTMA1 reliable?

The price and inventory of IPT60R065S7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT60R065S7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT60R065S7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT60R065S7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT60R065S7XTMA1?

IPT60R065S7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT60R065S7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT60R065S7XTMA1?

For technical support, including IPT60R065S7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT60R065S7XTMA1 requirements.

6.How does Aetrix verify that IPT60R065S7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT60R065S7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT60R065S7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT60R065S7XTMA1?

All IPT60R065S7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT60R065S7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT60R065S7XTMA1 part is unused and in its original packaging.

Return procedure for IPT60R065S7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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