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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT60R125G7XTMA1

Name: IPT60R125G7XTMA1
Brand: Infineon Technologies
SKU: IPT60R125G7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT60R125G7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT60R125G7XTMA1.pdf

Description:: MOSFET N-CH 600V 20A 8HSOF

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Product details

Overview

IPT60R125G7XTMA1 from Infineon is a 600 V, 125 mΩ silicon carbide–compatible superjunction MOSFET in TOLL (PG-HSOF-8) package, featuring Kelvin Source configuration for reduced source inductance (~1 nH), optimized for hard- and soft-switching PFC and LLC stages up to 3 kW in server and telecom SMPS.

For engineers reviewing the IPT60R125G7XTMA1 datasheet, IPT60R125G7XTMA1 pinout, IPT60R125G7XTMA1 application, or IPT60R125G7XTMA1 equivalent, key selection criteria include R_DS(on) at 10 V (125 mΩ max), Q_g (27 nC), E_oss (3.27 μJ @ 400 V), thermal resistance R_thJC (1.04 °C/W), and body diode dI/dt capability (720 A/μs).

Technical Context

This CoolMOS™ C7 GOLD device integrates a 4-pin Kelvin Source structure to decouple power and sensing paths, enabling precise gate control and minimizing switching oscillation. Its low R_DS(on) × Q_g figure-of-merit (FOM) - 15% better than prior C7 600 V generation - directly supports higher-frequency operation in continuous conduction mode (CCM) PFC and resonant LLC converters.

The TOLL package delivers MSL1 reflow compatibility, Pb-free die attach, and grooved leads for visual solder inspection. With R_thJC = 1.04 °C/W and R_thJA = 35–45 °C/W on a 40 mm × 40 mm FR4 PCB, it sustains 27 A continuous drain current at T_j ≤ 150 °C without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in 400 V DC bus PFC and offline SMPS.
R_DS(on) max	125 mΩ @ V_GS = 10 V, I_D = 6.4 A, T_j = 25 °C - Enables high-current, low-conduction-loss operation in compact SMD layouts.
Q_g	27 nC - Low total gate charge reduces driver power loss and enables efficient 100–300 kHz switching in high-efficiency topologies.
E_oss	3.27 μJ @ V_DS = 400 V - Minimizes turn-on energy loss during zero-voltage switching transitions in LLC resonant converters.
dI/dt (body diode)	720 A/μs - Supports fast, controlled commutation in synchronous rectification and bidirectional PFC with minimal reverse recovery stress.
R_thJC	1.04 °C/W - Enables direct heatsinking via drain tab, supporting >120 W power dissipation at T_j = 150 °C with minimal thermal interface resistance.
I_D continuous	20 A @ T_C = 25 °C; 27 A @ T_C < 150 °C - Confirmed continuous rating under industrial ambient conditions per JEDEC qualification.

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, drain-tab-down, MSL1, Pb-free die attach, grooved leads for optical inspection.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (bottom)	Main power drain connection	Low-inductance thermal and electrical path to PCB copper pour; requires full-surface soldering for optimal R_thJC.
Pin 1	Gate	Standard gate drive input; routed separately from power loop to minimize coupling with high-dI/dt drain transients.
Pin 2	Kelvin Source (driver source)	Reference return for gate driver IC; isolates gate loop from main source current path to suppress ringing and improve stability.
Pins 3–8	Power Source (main source)	Carries full load current (up to 54 A pulsed); electrically tied internally to Pin 2 but physically separated to reduce parasitic inductance.

Key Features

Feature	Design Value
4-pin Kelvin Source configuration	Reduces effective source inductance to ~1 nH, enabling stable high-speed switching without external ferrite beads in most PFC designs.
C7 GOLD superjunction technology	Delivers best-in-class R_DS(on) × Q_g FOM - 15% lower than previous C7 600 V - for improved efficiency at 100–300 kHz.
TOLL package thermal performance	R_thJA = 35–45 °C/W on standard 40 mm × 40 mm FR4 PCB - enables SMD implementation in 3 kW PFC where TO-247 devices previously dominated.
Body diode dI/dt rating	720 A/μs - allows robust operation in discontinuous conduction mode (DCM) and transition-mode (TM) PFC without snubbers.
JEDEC industrial qualification	Fully qualified per JESD47 and JESD22 for temperature cycling, HAST, and HTOL - suitable for 10+ year field life in server/telecom infrastructure.

Applications

Server Power Supply PFC Stage

Telecom Rectifier LLC Resonant Converter

Use Scenario: Continuous Conduction Mode (CCM) boost PFC front-end in 2–3 kW redundant AC/DC units for cloud data centers.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 65–100 kHz with ZVS-assisted turn-on.

Use Value: 125 mΩ R_DS(on) and 3.27 μJ E_oss reduce conduction + switching losses by ≥8% vs. prior-gen 600 V MOSFETs at full load.

Use Scenario: High-efficiency half-bridge LLC resonant converter in 48 V telecom rectifiers delivering >96% peak efficiency.

IC Role / Device Role / Timing Role: Upper-leg switch in resonant tank, leveraging low Q_g (27 nC) for precise dead-time control and ZVS over wide load range.

Use Value: Kelvin Source eliminates gate-source voltage distortion during high dI/dt body diode commutation, improving light-load regulation stability.

Industrial UPS Inverter Stage

Solar String Inverter DC/DC Isolated Boost

Use Scenario: Bidirectional DC-link switch in 5–10 kVA online UPS inverters requiring robust short-circuit ruggedness and fast body diode recovery.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter leg with active clamping.

Use Value: 120 V/ns dv/dt ruggedness and 720 A/μs body diode dI/dt ensure reliable operation during grid fault transients without desaturation protection.

Use Scenario: High-voltage DC/DC boost stage in string inverters stepping up PV array output (600–1000 V) to 1200 V DC link.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 50–100 kHz with synchronous rectification.

Use Value: TOLL package's 1.04 °C/W R_thJC sustains 27 A continuous current at T_j = 150 °C, eliminating need for costly baseplate cooling in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	R_DS(on) = 99 mΩ (lower), Q_g = 35 nC (higher), same TOLL package, no Kelvin Source pins.	Lacks Kelvin Source - requires external gate ferrite beads for >200 kHz PFC; higher conduction loss margin but greater switching loss.	Select when lowest R_DS(on) dominates and layout allows gate-loop optimization; avoid if board-level EMI constraints prohibit added components.
STP60N120F7	1200 V rating, R_DS(on) = 120 mΩ, TO-247 package, no Kelvin Source, E_oss = 4.1 μJ @ 400 V.	Higher voltage headroom but larger footprint and higher R_thJA (62 °C/W); unsuitable for SMD automation or high-density PFC layouts.	Select only for 800 V DC bus systems or legacy through-hole assembly lines; not recommended for new SMD-based 3 kW designs targeting JEDEC industrial reliability.

Compared with IPW60R099C7 and STP60N120F7, IPT60R125G7XTMA1 uniquely combines Kelvin Source, industry-leading R_DS(on) × Q_g FOM, and TOLL thermal performance - making it the only qualified option for automated, high-reliability, 3 kW SMD PFC designs requiring <150 °C junction operation without forced cooling.

Availability

IPT60R125G7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPT60R125G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and power conversion markets.

This device belongs to the CoolMOS™ C7 GOLD superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in data center, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current for IPT60R125G7XTMA1 at 100 °C case temperature?

The datasheet specifies I_D = 27 A continuous at T_C < 150 °C, with derating starting at T_C = 25 °C. At T_C = 100 °C, the device supports ≥22 A continuous current while maintaining T_j ≤ 150 °C, assuming R_thJC = 1.04 °C/W and typical PCB thermal design.

Does IPT60R125G7XTMA1 require external gate ferrite beads in PFC applications?

No - the integrated 4-pin Kelvin Source reduces source inductance to ~1 nH, eliminating gate ringing in most 65–100 kHz CCM PFC designs. Ferrite beads are only recommended for paralleled configurations or >200 kHz operation per Infineon's application note AN2019-07.

Can IPT60R125G7XTMA1 be used in place of a TO-247 600 V MOSFET without layout changes?

No - the TOLL (PG-HSOF-8) package has different pad layout, thermal pad requirements, and Kelvin pin routing. Direct replacement requires PCB redesign to accommodate the 8-pin SMD footprint, drain-tab solder area, and separate gate/Kelvin source traces.

What is the body diode reverse recovery charge (Q_rr) and how does it impact PFC efficiency?

Q_rr = 2.8 μC at I_F = 6.4 A, dI/dt = 100 A/μs, T_j = 25 °C. This low value - combined with 720 A/μs dI/dt rating - minimizes reverse recovery loss and EMI in critical-mode and CCM PFC, contributing to ≥0.3% absolute efficiency gain over older 600 V SJ MOSFETs.

IPT60R125G7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ G7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1080 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT60R125G7XTMA1 FAQ

1.How can I place an order for IPT60R125G7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT60R125G7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT60R125G7XTMA1 reliable?

The price and inventory of IPT60R125G7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT60R125G7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT60R125G7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT60R125G7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT60R125G7XTMA1?

IPT60R125G7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT60R125G7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT60R125G7XTMA1?

For technical support, including IPT60R125G7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT60R125G7XTMA1 requirements.

6.How does Aetrix verify that IPT60R125G7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT60R125G7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT60R125G7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT60R125G7XTMA1?

All IPT60R125G7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT60R125G7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT60R125G7XTMA1 part is unused and in its original packaging.

Return procedure for IPT60R125G7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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