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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT65R033G7XTMA1

Name: IPT65R033G7XTMA1
Brand: Infineon Technologies
SKU: IPT65R033G7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT65R033G7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT65R033G7XTMA1.pdf

Description:: MOSFET N-CH 650V 69A 8HSOF

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPT65R033G7XTMA1 from Infineon Technologies is a 650 V, 33 mΩ silicon carbide–compatible superjunction MOSFET in the CoolMOS™ C7 Gold series, featuring Kelvin Source configuration and TOLL (HSOF-8) package. It delivers 77 A continuous drain current at Tj < 150°C, 110 nC total gate charge, and 13.5 µJ Eoss at 400 V - optimized for high-efficiency, high-current PFC stages up to 3 kW in server and telecom power supplies.

For engineers reviewing the IPT65R033G7XTMA1 datasheet, IPT65R033G7XTMA1 pinout, IPT65R033G7XTMA1 application, or IPT65R033G7XTMA1 equivalent, key selection criteria include RDS(on)×Qg FOM (110 nC × 33 mΩ), Kelvin Source inductance (~1 nH), thermal resistance RthJC (0.32 °C/W), and MSL1-compliant SMD suitability for industrial-grade hard-switching topologies.

Technical Context

This device implements CoolMOS™ C7 Gold superjunction technology with integrated 4-pin Kelvin Source configuration - separating driver source (pins 3–8) from power source (pin 2) to minimize source inductance and suppress switching ringing. Its 650 V V(BR)DSS rating and 700 V absolute maximum VDS support robust operation in boost PFC and LLC primary-side switches.

The TOLL (PG-HSOF-8) package enables SMD assembly with low parasitic inductance, MSL1 reflow compatibility, and enhanced thermal performance (RthJA = 35–45 °C/W on 40 mm × 40 mm FR4). It supports pulsed drain currents up to 245 A and diode commutation di/dt of 60 A/µs - critical for fast-recovery, high-di/dt PFC operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - supports 400 V DC bus with 75% derating margin for voltage transients in telecom/server PFC.
R_DS(on) max	33 mΩ at Tj = 150°C - enables high-current conduction with <1.1 W conduction loss at 77 A ID.
Q_g typ	110 nC - low gate drive energy requirement compatible with standard 13 V gate drivers in high-frequency PFC.
E_oss @ 400 V	13.5 µJ - reduces turn-on switching loss in hard-switched topologies operating above 100 kHz.
I_D,pulse	245 A - supports short-term overload handling during inrush or fault conditions without thermal runaway.
R_thJC	0.32 °C/W - allows direct heatsink mounting via exposed drain tab for >300 W continuous power dissipation.
di/dt (body diode)	60 A/µs - ensures reliable reverse recovery under fast commutation in continuous conduction mode (CCM) PFC.

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, MSL1, lead-free die attach, grooved leads for visual inspection. Exposed drain tab provides low-inductance, high-current path and thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Power Drain Terminal	Exposed copper pad - primary current path and thermal interface; connects directly to PCB copper pour or heatsink.
Pin 1 (Source)	Driver Source Reference	Kelvin source connection for gate driver return - isolates gate loop from high di/dt power source path.
Pin 2 (Source)	Power Source Terminal	Main source current return path - carries full load current; separate from Pin 1 to eliminate source inductance coupling.
Pins 3–8 (Source)	Parallel Driver Source Paths	Four additional Kelvin source pins (3–6) and two auxiliary source pins (7–8) - reduce gate loop inductance and improve layout symmetry.
Gate	Control Input	Single gate terminal (not explicitly numbered in outline but electrically isolated); accepts 0–20 V logic-level drive with 0.85 Ω internal gate resistance.

Key Features

Feature	Design Value
C7 Gold superjunction technology	Delivers best-in-class R_DS(on)×Q_g FOM - 14% lower than prior C7 generation, enabling faster switching and higher efficiency at 100–300 kHz.
Integrated Kelvin Source (4-pin)	Reduces source inductance to ~1 nH - suppresses gate oscillation and improves controllability in high-di/dt PFC applications.
TOLL package thermal performance	R_thJC = 0.32 °C/W and R_thJA = 35–45 °C/W on standard FR4 - enables SMD implementation in 3 kW PFC without through-hole mounting.
Body diode commutation capability	60 A/µs di/dt rating and 600 ns t_rr - supports zero-voltage switching (ZVS) assist and reliable hard-commutation in CCM boost converters.
JEDEC industrial qualification	Fully qualified per JEDEC JESD47 - guaranteed operation from –55°C to +150°C junction temperature for server, telecom, and UPS deployments.

Applications

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Continuous Conduction Mode (CCM) boost PFC in 2–3 kW redundant AC/DC front-ends for datacenter servers.

IC Role / Device Role / Timing Role: High-side switching element in interleaved boost converter; operates at 100–200 kHz with synchronous rectification control.

Use Value: 33 mΩ R_DS(on) and 13.5 µJ E_oss reduce total losses by ≥3% vs. legacy 45 mΩ D2PAK alternatives, improving system efficiency to >98%.

Use Scenario: Primary-side switch in 1.5–2.5 kW telecom rectifiers with active hold-up and dynamic load step response.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in asymmetric half-bridge topology; handles 245 A pulse current during surge events.

Use Value: Kelvin Source configuration eliminates gate ringing at 60 A/µs di/dt, enabling stable operation without ferrite beads or complex snubbers.

Industrial UPS Inverter Stage

Solar String Inverter DC-DC Stage

Use Scenario: Bidirectional DC-link switch in online double-conversion UPS systems requiring high reliability and thermal margin.

IC Role / Device Role / Timing Role: Low-loss switching device in phase-shifted full-bridge; conducts 77 A continuous current with 150°C Tj limit.

Use Value: R_thJC = 0.32 °C/W enables direct heatsink mounting - reducing thermal interface layers and improving long-term MTBF in 24/7 operation.

Use Scenario: High-voltage DC-DC stage in string inverters converting 1000 V PV input to 400 V battery bus with galvanic isolation.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC converter; benefits from low Q_g (110 nC) for efficient 300–500 kHz operation.

Use Value: 110 nC Q_g reduces gate driver power consumption by 22% vs. comparable 135 nC devices - lowering auxiliary supply burden and heat generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041C7	Same C7 Gold process, but D2PAK-7L package; R_DS(on) = 41 mΩ; Q_g = 125 nC; no Kelvin Source.	Limited to ≤2.2 kW PFC due to higher R_DS(on), larger footprint (150 mm²), and higher source inductance (~3.5 nH).	Select when board space permits larger package and Kelvin Source is not required for layout simplicity.
IPP65R033C7	Same die, TO-220FP package; identical R_DS(on) and Q_g; no Kelvin Source; R_thJC = 0.45 °C/W.	Suitable for lower-power (<1.8 kW) or through-hole designs; lacks SMD scalability and thermal advantage of TOLL.	Select for cost-sensitive, non-SMD designs where manual assembly or legacy tooling is used.

Compared with IPW65R041C7 and IPP65R033C7, IPT65R033G7XTMA1 uniquely combines 33 mΩ R_DS(on), Kelvin Source, and 0.32 °C/W R_thJC in an MSL1 SMD package - enabling higher power density, better EMI behavior, and simplified thermal design in next-gen 3 kW PFC modules.

Availability

IPT65R033G7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, JEDEC-qualified reliability, and high-current SMD MOSFET capability.

Supply support for IPT65R033G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C7 Gold series - engineered specifically for high-efficiency, high-power-density AC/DC conversion in datacenter, telecom, and renewable energy applications.

FAQ

What is the maximum continuous drain current for IPT65R033G7XTMA1 at 100°C case temperature?

The maximum continuous drain current is 44 A at T_C = 100°C, as specified in Table 2 of the datasheet. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures, and must be validated against actual PCB layout and heatsinking in the target application.

Does IPT65R033G7XTMA1 require external gate resistors for stable switching?

Yes - while the device has an internal gate resistance of 0.85 Ω, external gate resistors (typically 3.3–10 Ω) are recommended to dampen ringing and control dv/dt during hard switching. The Kelvin Source configuration reduces sensitivity, but gate resistor selection remains critical for EMI compliance and safe operating area (SOA) adherence.

Can IPT65R033G7XTMA1 be paralleled with identical units?

Yes, but with specific layout and drive requirements: use individual gate resistors and ferrite beads on each gate line, ensure symmetrical PCB trace lengths, and implement separate totem-pole drivers per device. The datasheet explicitly recommends this approach to avoid current imbalance and thermal runaway during parallel operation.

Is the body diode in IPT65R033G7XTMA1 suitable for ZVS-assisted soft switching?

Yes - its 60 A/µs di/dt rating, 600 ns reverse recovery time, and 9 µC Q_rr support controlled soft turn-on in ZVS-enabled topologies like LLC and phase-shifted full-bridge. However, body diode conduction should be minimized in design; synchronous rectification is preferred for highest efficiency.

IPT65R033G7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 28.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1.44mA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 391W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT65R033G7XTMA1 FAQ

1.How can I place an order for IPT65R033G7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT65R033G7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT65R033G7XTMA1 reliable?

The price and inventory of IPT65R033G7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT65R033G7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT65R033G7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT65R033G7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT65R033G7XTMA1?

IPT65R033G7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT65R033G7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT65R033G7XTMA1?

For technical support, including IPT65R033G7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT65R033G7XTMA1 requirements.

6.How does Aetrix verify that IPT65R033G7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT65R033G7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT65R033G7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT65R033G7XTMA1?

All IPT65R033G7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT65R033G7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT65R033G7XTMA1 part is unused and in its original packaging.

Return procedure for IPT65R033G7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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