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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT65R195G7XTMA1

Name: IPT65R195G7XTMA1
Brand: Infineon Technologies
SKU: IPT65R195G7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT65R195G7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT65R195G7XTMA1.pdf

Description:: MOSFET N-CH 650V 14A 8HSOF

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Product details

Overview

IPT65R195G7XTMA1 from Infineon Technologies is a 650 V, 195 mΩ silicon carbide–compatible superjunction MOSFET in the CoolMOS™ C7 Gold series, featuring Kelvin Source configuration and TOLL (HSOF-8) package. It delivers 18 A continuous drain current at Tj < 150°C, 20 nC total gate charge, and 2.3 µJ Eoss at 400 V - optimized for high-efficiency PFC stages up to 3 kW in server and telecom power supplies.

For engineers reviewing the IPT65R195G7XTMA1 datasheet, IPT65R195G7XTMA1 pinout, IPT65R195G7XTMA1 application, or IPT65R195G7XTMA1 equivalent, key selection criteria include RDS(on)×Qg FOM (14% better than prior C7), 1 nH source inductance, MSL1-compliant SMD thermal performance, and body diode di/dt rating of 60 A/µs for hard-switching reliability.

Technical Context

This device implements CoolMOS™ C7 Gold superjunction technology with integrated 4-pin Kelvin Source architecture, enabling precise gate control and reduced switching oscillation. Its TOLL package provides low RthJC (1.29 °C/W) and supports high-current SMD designs without requiring through-hole mounting.

The MOSFET features a 3.5 V typical gate threshold voltage, 5.4 V gate plateau voltage, and 996 pF input capacitance at 400 V - all calibrated for stable operation in continuous conduction mode (CCM) PFC and hard-switched PWM topologies operating up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - Withstands transient overvoltage spikes beyond 650 V rated breakdown, supporting robust design margin in 400 V AC-input PFC stages.
R_DS(on) max	195 mΩ at T_j = 150°C - Enables compact thermal layout with 18 A continuous current handling in TOLL footprint (115 mm²).
Q_g typ	20 nC - Low gate drive energy reduces driver loss and enables >100 kHz switching in high-density SMPS designs.
E_oss @ 400 V	2.3 µJ - Minimizes turn-off loss in soft-charging applications like critical conduction mode (CrCM) PFC.
Body diode di/dt	60 A/µs - Supports fast, controlled commutation in bridge-leg configurations without external snubbers.
R_thJC	1.29 °C/W - Enables direct heatsink attachment via exposed drain tab for efficient thermal path in high-power SMD layouts.

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, MSL1, lead-free die attach, grooved leads for visual inspection. Exposed drain tab serves as primary thermal and electrical connection point.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal and thermal interface	Low-inductance, high-current path; soldered directly to PCB copper pour for thermal dissipation and EMI reduction.
Pin 1 (Source)	Power source reference for main current path	Carries full load current; connected to ground plane or low-side switch node in half-bridge configurations.
Pins 3–8 (Kelvin Source)	Dedicated low-current source sensing node	Provides isolated gate drive return path to minimize source inductance (~1 nH), suppressing gate ringing during fast switching.
Pin 2 (Gate)	Control input for channel conduction	Receives 10 V–13 V gate drive; requires low-impedance routing due to 1.2 Ω internal gate resistance and 20 nC Q_g.

Key Features

Feature	Design Value
C7 Gold superjunction process	Delivers best-in-class R_DS(on)×Q_g and R_DS(on)×E_oss FOM for 650 V class, enabling higher efficiency at same silicon area.
Kelvin Source configuration (4-pin)	Reduces effective source inductance to ~1 nH, eliminating need for external gate ferrite beads in most PFC designs.
TOLL package thermal performance	Improves R_thJA to 35–45 °C/W on 40 mm × 40 mm FR4 PCB - 30% better than D2PAK under identical cooling conditions.
Body diode reverse recovery	Q_rr = 2.8 µC and t_rr = 500 ns at 400 V - enables reliable operation in discontinuous conduction mode (DCM) without secondary snubbing.

Applications

Server Primary PFC

Telecom Rectifier Module

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 2–3 kW rack-mounted server PSUs.

IC Role / Device Role / Timing Role: High-voltage switching element controlling boost inductor current with 100–200 kHz switching frequency.

Use Value: 195 mΩ R_DS(on) and 20 nC Q_g reduce conduction + switching losses by ≥3% vs. legacy C7, improving 80 PLUS Titanium efficiency compliance.

Use Scenario: Front-end AC/DC conversion in -48 V telecom rectifier systems with active hold-up capability.

IC Role / Device Role / Timing Role: Main switch in interleaved dual-phase PFC, operating with phase-shifted gate drive to reduce input ripple.

Use Value: Kelvin Source pins suppress gate-source voltage distortion during high di/dt transitions, maintaining stable duty cycle control across load transients.

Industrial UPS Inverter Stage

Solar String Inverter DC-Link

Use Scenario: Hard-switched H-bridge in-line inverter stage for 1–2 kVA uninterruptible power supplies.

IC Role / Device Role / Timing Role: Low-side switch managing bidirectional energy flow during battery charging and grid backup modes.

Use Value: 60 A/µs body diode di/dt rating ensures clean commutation during zero-voltage switching (ZVS) transitions, reducing stress on gate drivers.

Use Scenario: DC-link switching cell in string inverters handling 600–1000 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC topology, clamping voltage during fault conditions.

Use Value: 700 V V_DS max withstand rating accommodates 100 V+ overshoot during lightning surge events per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 650 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	Lower R_DS(on) (41 mΩ), higher Q_g (62 nC), TO-247 package, no Kelvin Source	Requires through-hole assembly and external gate ferrite; suited for lower-frequency, higher-current industrial SMPS	Select when thermal mass > SMD density is prioritized and gate drive strength allows higher Q_g burden.
IPP65R195C7	Same R_DS(on), same C7 Gold tech, but D2PAK-7L package with standard 3-pin source and higher R_thJA (62 °C/W)	Limited to ≤1.5 kW PFC due to thermal constraints; lacks Kelvin Source, increasing gate ringing risk above 150 kHz	Choose only if board layout prohibits TOLL footprint or existing D2PAK reflow infrastructure is fixed.

Compared with IPW65R041CFD7 and IPP65R195C7, IPT65R195G7XTMA1 uniquely combines SMD manufacturability, Kelvin Source noise immunity, and 1.29 °C/W R_thJC - making it the only option qualified for 3 kW PFC in automated assembly lines with strict EMI and thermal targets.

Availability

IPT65R195G7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, JEDEC-qualified industrial reliability, and MSL1-compliant SMD placement.

Supply support for IPT65R195G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and qualification standards aligned to IATF 16949 and ISO 9001.

This device belongs to the CoolMOS™ C7 Gold series - engineered specifically for high-frequency, high-efficiency AC/DC conversion in datacenter, telecom, and renewable energy systems where thermal density and switching loss dominate system-level efficiency.

FAQ

What is the maximum recommended gate resistor value for IPT65R195G7XTMA1 in a 150 kHz PFC design?

A 10 Ω gate resistor is validated in the datasheet test circuit (VDD=400 V, ID=4.8 A, RG=10 Ω), yielding 9 ns turn-on delay and 5 ns rise time. For 150 kHz operation, values between 5 Ω and 15 Ω maintain safe dv/dt (<100 V/ns) while minimizing switching loss; values >22 Ω increase turn-off energy disproportionately due to Qgd dominance.

Can IPT65R195G7XTMA1 be paralleled with identical units without external gate damping?

No. The datasheet explicitly recommends ferrite beads on each gate or separate totem-pole drivers for paralleling. Although Kelvin Source reduces common-source inductance, mismatched layout parasitics between parallel devices cause current imbalance and localized thermal runaway above 10 A per device.

Does the TOLL package require special stencil design for reflow soldering?

Yes. The exposed drain tab demands a 70–80% aperture ratio with stepped stencil thickness (0.15 mm for signal pads, 0.20 mm for tab) to ensure void-free solder joints. IPC-7095 guidelines for thermally enhanced SMDs apply; insufficient paste volume causes RthJC degradation exceeding 1.5 °C/W.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No. While the body diode has 60 A/µs di/dt rating and 500 ns t_rr, its 0.9 V forward voltage and 2.8 µC Q_rr generate excessive conduction and recovery loss above 100 kHz. External SiC Schottky or GaN FETs are required for synchronous rectification in LLC topologies.

IPT65R195G7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 195mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 996 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 97W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT65R195G7XTMA1 FAQ

1.How can I place an order for IPT65R195G7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT65R195G7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT65R195G7XTMA1 reliable?

The price and inventory of IPT65R195G7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT65R195G7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT65R195G7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT65R195G7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT65R195G7XTMA1?

IPT65R195G7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT65R195G7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT65R195G7XTMA1?

For technical support, including IPT65R195G7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT65R195G7XTMA1 requirements.

6.How does Aetrix verify that IPT65R195G7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT65R195G7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT65R195G7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT65R195G7XTMA1?

All IPT65R195G7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT65R195G7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT65R195G7XTMA1 part is unused and in its original packaging.

Return procedure for IPT65R195G7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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