Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPTC012N08NM5ATMA1

Part No.:
IPTC012N08NM5ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
16-PowerSOP Module
Datasheet:
AetrixIPTC012N08NM5ATMA1.pdf
Description:
MOSFET N-CH 80V 40A/396A HDSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:186

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPTC012N08NM5 from Infineon Technologies is an N-channel 80 V OptiMOSTM 5 power MOSFET in PG-HDSOP-16 package, rated for 396 A continuous drain current at TC=25 °C, with 1.2 mΩ max RDS(on), 175 °C junction temperature rating, and 100% avalanche tested - optimized for high-current motor drives and battery-powered industrial inverters.

For engineers reviewing the IPTC012N08NM5 datasheet, IPTC012N08NM5 pinout, IPTC012N08NM5 application, or IPTC012N08NM5 equivalent, key selection criteria include top-side cooling capability, low Qoss (204 nC) for hard-switching efficiency, thermal resistance RthJC = 0.4 °C/W, and validated performance under 175 °C operation in traction and UPS systems.

Technical Context

This device implements a trench-gate, superjunction-enhanced silicon MOSFET architecture delivering ultra-low conduction loss and fast switching with Qg = 175 nC and Qgd = 56 nC at VDD = 40 V, ID = 100 A. Its dual-drain tab (Pins 9–16 + exposed thermal pad) enables direct top-side heatsinking while maintaining isolation between gate (Pin 8) and source (Pins 1–7).

The integrated body diode supports synchronous rectification with trr = 86 ns and Qrr = 177 nC at IF = 50 A, diF/dt = 100 A/µs. Thermal characterization uses ΨJL = 9 °C/W (source leads) and ΨJL = 3 °C/W (drain leads), enabling accurate junction temperature estimation via lead thermometry in high-power modules.

Key Specifications

ParameterValue and Actual Design Meaning
VDS80 V - Maximum blocking voltage compatible with 48 V–60 V battery systems and 3-phase 400 VAC line-fed inverters with margin.
RDS(on),max1.2 mΩ - Enables <1.2 W conduction loss at 100 A, critical for >99% efficiency in high-current motor phases.
ID,cont396 A @ TC=25 °C - Supports peak phase currents in EV traction inverters and industrial servo drives without paralleling.
Qoss204 nC - Low output charge reduces turn-off energy loss in hard-switched DC–DC and motor control topologies.
Tj,max175 °C - Qualified for extended thermal operation in sealed enclosures and high-ambient industrial environments.
RthJC0.4 °C/W - Confirmed thermal path from junction to case (top surface), enabling direct thermal interface to cold plate.
Qg175 nC - Gate drive energy requirement dictates gate driver peak current ≥ 5 A for <100 ns switching transitions.

Pinout & Package

PG-HDSOP-16-2 is a thermally enhanced, surface-mount package with exposed drain thermal pad on top side (Pins 9–16 + metal tab), isolated gate terminal (Pin 8), and multi-pin source connection (Pins 1–7) for low-inductance source return routing.

Pin/TerminalCircuit RoleDesign Meaning
Pins 1–7SourceLow-inductance parallel source terminals reduce common-source inductance and improve switching stability.
Pin 8GateSingle-point gate input; requires Kelvin connection for precise gate drive in high-di/dt applications.
Pins 9–16 + TabDrainTop-side cooled drain path; thermal pad must be soldered to heatsink for RthJC = 0.4 °C/W performance.

Key Features

FeatureDesign Value
Optimized for top-side coolingEnables integration into compact, double-sided PCB assemblies where bottom-side heatsinking is inaccessible.
100% avalanche testedGuarantees ruggedness against inductive load switching transients without derating in motor drive designs.
Superior thermal performanceΨJL = 3 °C/W to drain leads allows real-time junction temperature monitoring via drain lead thermocouple placement.
N-channel, 80 V ratingSupports 48 V battery systems with 2× overvoltage margin and compatibility with standard 12 V gate drivers.
Halogen-free & RoHS compliantMeets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for industrial and transportation end equipment.

Applications

Electric Power Steering (EPS)Industrial Servo Drives

Use Scenario: High-reliability 48 V EPS motor phase leg in automotive chassis systems requiring ASIL-B compliance.

IC Role / Device Role / Timing Role: Main switching element in three-phase inverter bridge, operating at 10–20 kHz PWM with peak currents up to 350 A.

Use Value: 175 °C rating ensures operation under hood temperatures; low RDS(on) minimizes heat generation in confined steering column enclosures.

Use Scenario: Compact 7.5 kW servo drive for CNC machine axes with space-constrained heatsink mounting.

IC Role / Device Role / Timing Role: High-current half-bridge switch in Si-based inverter stage, handling 200 A RMS motor currents.

Use Value: Top-side cooling eliminates need for through-hole heatsinks; PG-HDSOP-16 footprint enables dense PCB layout with minimal thermal vias.

Uninterruptible Power Supplies (UPS)Battery Energy Storage Systems (BESS)

Use Scenario: Bidirectional DC–AC inverter stage in 10 kVA online UPS with forced-air cooling.

IC Role / Device Role / Timing Role: Output stage MOSFET in full-bridge topology, switching at 16 kHz with soft-start and overload protection.

Use Value: Avalanche ruggedness prevents failure during grid fault conditions; Qoss < 210 nC reduces switching losses at partial load.

Use Scenario: DC–DC boost converter in 400 V BESS string management unit with passive thermal management.

IC Role / Device Role / Timing Role: Primary switch in interleaved two-phase boost stage, operating at 50 kHz with 300 A peak current.

Use Value: RthJC = 0.4 °C/W enables direct cold-plate mounting; 1.2 mΩ RDS(on) sustains >98.5% conversion efficiency at 200 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB012N08N5Same OptiMOSTM 5 die, but in TO-leadless PG-HSOP-16 package with bottom-side cooling only; RthJC = 0.55 °C/W.Requires PCB-mounted heatsink; unsuitable for top-side-cooled modules or stacked board assemblies.Select when bottom-side thermal interface is available and mechanical height constraints favor standard HSOP.
IRFS7537TRLPbF80 V, 360 A, RDS(on) = 1.3 mΩ, Qg = 195 nC, TO-263-7 package; higher gate charge increases driver loss.Larger footprint and lower current rating limit use in ultra-dense inverter modules.Choose if legacy TO-263 layout compatibility is required and gate drive capability supports 195 nC charge.

Compared with IPB012N08N5 and IRFS7537TRLPbF, IPTC012N08NM5 uniquely delivers top-side thermal access, lowest RthJC (0.4 °C/W), and highest continuous current (396 A), making it optimal for next-gen compact inverters where thermal path directionality and power density are critical.

Availability

IPTC012N08NM5 is available at Aetrix Electronics and suitable for electric power steering, industrial servo drives, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPTC012N08NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOSTM 5 product line, engineered specifically for high-efficiency, high-current switching in motor control and battery system applications where thermal management and avalanche robustness are design-critical.

FAQ

What is the maximum allowable gate-source voltage for IPTC012N08NM5?

The absolute maximum gate-source voltage is ±20 V per datasheet Table 2. Operation above +12 V or below −5 V risks oxide degradation. Recommended gate drive is +10 V to ensure full enhancement while maintaining long-term reliability under repeated switching stress.

Can IPTC012N08NM5 be used in synchronous rectification mode?

Yes - its integrated body diode has trr = 86 ns and Qrr = 177 nC at IF = 50 A, enabling use in synchronous rectifier configurations up to 100 kHz. However, external Schottky diodes are preferred for >150 kHz due to diode recovery limitations.

Is the PG-HDSOP-16-2 package lead-free and RoHS compliant?

Yes - the device uses Pb-free lead plating and complies with EU RoHS Directive 2011/65/EU and halogen-free requirements per IEC61249-2-21, confirmed in the "Features" section of the Rev. 2.0 datasheet.

How is thermal resistance measured for top-side cooling in this package?

RthJC = 0.4 °C/W is measured from junction to the top surface of the drain thermal pad (Pins 9–16 + tab) under JEDEC JESD51-2 test conditions. This value assumes full-surface thermal interface material contact and no air gaps between pad and heatsink.

IPTC012N08NM5ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
16-PowerSOP Module
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
40A (Ta), 396A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs:
219 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
16000 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HDSOP-16-2

IPTC012N08NM5ATMA1 FAQ

1.How can I place an order for IPTC012N08NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTC012N08NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTC012N08NM5ATMA1 reliable?

The price and inventory of IPTC012N08NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTC012N08NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTC012N08NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTC012N08NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTC012N08NM5ATMA1?

IPTC012N08NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTC012N08NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTC012N08NM5ATMA1?

For technical support, including IPTC012N08NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTC012N08NM5ATMA1 requirements.

6.How does Aetrix verify that IPTC012N08NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTC012N08NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTC012N08NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTC012N08NM5ATMA1?

All IPTC012N08NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTC012N08NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTC012N08NM5ATMA1 part is unused and in its original packaging.

Return procedure for IPTC012N08NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPTC012N08NM5ATMA1 Tags

  • IPTC012N08NM5ATMA1
  • IPTC012N08NM5ATMA1 PDF
  • IPTC012N08NM5ATMA1 Datasheet
  • IPTC012N08NM5ATMA1 Specifications
  • IPTC012N08NM5ATMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPTC012N08NM5ATMA1
  • Buy IPTC012N08NM5ATMA1
  • IPTC012N08NM5ATMA1 Price
  • IPTC012N08NM5ATMA1 Distributor
  • IPTC012N08NM5ATMA1 Supplier
  • IPTC012N08NM5ATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER