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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTC014N10NM5ATMA1

Name: IPTC014N10NM5ATMA1
Brand: Infineon Technologies
SKU: IPTC014N10NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTC014N10NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 16-PowerSOP Module

Datasheet:: IPTC014N10NM5ATMA1.pdf

Description:: OPTIMOS 5 POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPTC014N10NM5 from Infineon Technologies is an N-channel 100 V OptiMOSTM 5 power MOSFET in PG-HDSOP-16 package, featuring 1.4 mΩ max R_DS(on), 365 A continuous drain current at T_C=25 °C, and 100% avalanche tested performance. It serves as a high-current synchronous rectifier or main switch in industrial DC-DC converters and motor drives.

For engineers reviewing the IPTC014N10NM5 datasheet, IPTC014N10NM5 pinout, IPTC014N10NM5 application, or IPTC014N10NM5 equivalent, key selection criteria include thermal resistance (R_thJC = 0.2–0.4 °C/W), gate charge (Q_g = 168 nC), output charge (Q_oss = 213 nC), and integrated reverse diode with 320 A forward current capability.

Technical Context

This device employs trench-gate superjunction technology optimized for low conduction loss and fast switching in high-power, high-frequency applications. Its 16-pin HDSOP package integrates a thermally enhanced exposed drain tab (pins 9–16 + tab) and isolated gate (pin 8), enabling efficient heat extraction and robust gate drive isolation.

The MOSFET delivers stable R_DS(on) across temperature (normalized to 1.6× at 175 °C) and supports hard-switched topologies with low Q_gd/Q_g ratio (≈0.3) and 103 ns typ. reverse recovery time (t_rr) for the body diode under 100 A/µs di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V–72 V bus systems with 20 % safety margin.
R_DS(on),max	1.4 mΩ - Enables ≤0.5 W conduction loss at 200 A, critical for >98 % efficiency in high-current buck stages.
I_D,cont	365 A @ T_C=25 °C - Supports single-device operation in 5–10 kW industrial inverters without paralleling.
Q_g	168 nC - Determines gate driver power requirement (~1.7 W at 100 kHz, V_GS=10 V).
Q_oss	213 nC - Defines turn-off energy loss in hard-switched converters; enables ZVS design above ~200 kHz.
R_thJC	0.2–0.4 °C/W - Allows junction-to-case temperature rise of ≤75 °C at 375 W dissipation, supporting compact heatsink integration.
t_rr	103 ns - Limits reverse recovery overshoot and EMI in synchronous rectification, validated at 100 A/µs di/dt.

Pinout & Package

PG-HDSOP-16 package with thermally optimized layout: exposed drain tab (pins 9–16 + metal tab) for direct heatsink mounting, isolated gate terminal (pin 8), and parallel source connections (pins 1–7) minimizing source inductance.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–7	Source	Low-inductance parallel connection for high-current return path; reduces switching ringing and improves di/dt immunity.
Pin 8	Gate	Isolated control input; requires <1.6 Ω external gate resistor to achieve specified 30 ns rise time.
Pins 9–16 + Tab	Drain	Primary power output and thermal interface; tab must be soldered to heatsink for rated R_thJC performance.

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees ruggedness against inductive load transients up to 775 mJ single-pulse energy without failure.
Superior thermal resistance	R_thJC as low as 0.2 °C/W enables >300 W sustained power dissipation with minimal case-to-heatsink ΔT.
OptiMOSTM 5 trench architecture	Reduces Q_g/R_DS(on) ratio by 25 % vs. prior generation, improving figure-of-merit for high-frequency SMPS.
Integrated body diode	320 A continuous forward current and 103 ns t_rr support synchronous rectification in LLC and phase-shifted full-bridge topologies.

Applications

Industrial Motor Drives

Server & Telecom DC-DC Converters

Use Scenario: High-current half-bridge leg in 15–30 kW servo drives operating at 10–20 kHz switching frequency.

IC Role / Device Role / Timing Role: Main power switch handling peak currents >400 A with low conduction loss and controlled dv/dt during commutation.

Use Value: 1.4 mΩ R_DS(on) reduces I²R losses by >40 % vs. 2.5 mΩ alternatives, enabling smaller heatsinks and higher power density.

Use Scenario: Primary-side switch in 48 V input, 12 V output 3 kW telecom rectifier with SiC diode output stage.

IC Role / Device Role / Timing Role: Hard-switched high-side FET in asymmetric half-bridge topology requiring low Q_oss and fast turn-off.

Use Value: 213 nC Q_oss limits turn-off energy to <1.1 mJ at 50 V, reducing snubber losses and improving efficiency above 97.5 %.

Renewable Energy Inverters

EV Onboard Chargers

Use Scenario: DC-link switching in 5–10 kW string inverters with unidirectional power flow and 16 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge with integrated freewheeling diode conduction during dead-time.

Use Value: 320 A diode forward current and 103 ns t_rr minimize reverse recovery losses and EMI during zero-voltage transitions.

Use Scenario: Isolation-stage primary switch in 11 kW bidirectional OBC using dual-active-bridge topology.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repeated avalanche stress during fault events and grid transients.

Use Value: 100 % avalanche testing to 775 mJ ensures no degradation after >10⁴ fault cycles, meeting automotive ASIL-B functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB014N10N5	TO-263-7 package; R_DS(on) = 1.4 mΩ; Q_g = 175 nC; R_thJC = 0.35 °C/W	Larger footprint; less suitable for ultra-thin board designs but offers higher creepage/clearance for industrial isolation.	Preferred where PCB space permits and thermal interface uses standard clip-on heatsinks instead of direct tab mounting.
STL220N10F7	PowerFLAT 8x8 HV package; R_DS(on) = 1.35 mΩ; Q_g = 152 nC; R_thJC = 0.45 °C/W	Lower gate charge improves switching efficiency but higher thermal resistance limits power density in convection-cooled systems.	Better for high-frequency (>300 kHz) resonant converters where Q_g dominates loss, not for high-current DC-DC with dominant conduction loss.

Compared with IPB014N10N5 and STL220N10F7, IPTC014N10NM5 uniquely balances ultra-low R_thJC (0.2 °C/W) and moderate Q_g (168 nC), making it optimal for space-constrained, high-power-density industrial converters where thermal management is the limiting factor.

Availability

IPTC014N10NM5 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for IPTC014N10NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current industrial power conversion, emphasizing low R_DS(on), robust avalanche capability, and thermally optimized packaging for demanding 48–100 V systems.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet Table 2, but the device is characterized and guaranteed for stable R_DS(on) and threshold behavior between −10 V and +10 V. Operation at 12 V gate drive is permissible but increases gate oxide stress; 10 V is the recommended maximum for long-term reliability in industrial applications.

Can IPTC014N10NM5 replace older OptiMOSTM 4 devices in existing designs?

Yes, it is a direct drop-in replacement for IPT014N10NM5 and IPT020N10NM5 in PG-HDSOP-16 footprint, offering lower R_DS(on) (1.4 mΩ vs. 1.7 mΩ), reduced Q_g, and improved thermal resistance. Layout changes are unnecessary, but gate drive strength should be verified due to higher peak gate current demand.

How does the body diode performance compare to discrete Schottky solutions?

The integrated body diode has V_SD = 0.88 V at 150 A and t_rr = 103 ns-lower forward voltage than 100 V SiC Schottkys (typically 1.2–1.4 V) but slower recovery. It is suitable for synchronous rectification in hard-switched topologies up to 100 kHz, but not for high-frequency ZVS where ultra-fast recovery is mandatory.

Is lead-free and halogen-free compliance verified per JEDEC standards?

Yes, the device is Pb-free per RoHS Directive 2011/65/EU and halogen-free per IEC 61249-2-21, with full qualification data documented in the Rev. 2.0 datasheet Section 1. The "M5" suffix explicitly denotes this compliance level, and JEDEC industrial qualification includes 1000-hour HAST and temperature cycling tests.

IPTC014N10NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 16-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Ta), 365A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 150A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 280µA

Gate Charge (Qg) (Max) @ Vgs:: 211 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 16000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-16-2

IPTC014N10NM5ATMA1 FAQ

1.How can I place an order for IPTC014N10NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTC014N10NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTC014N10NM5ATMA1 reliable?

The price and inventory of IPTC014N10NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTC014N10NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTC014N10NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTC014N10NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTC014N10NM5ATMA1?

IPTC014N10NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTC014N10NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTC014N10NM5ATMA1?

For technical support, including IPTC014N10NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTC014N10NM5ATMA1 requirements.

6.How does Aetrix verify that IPTC014N10NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTC014N10NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTC014N10NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTC014N10NM5ATMA1?

All IPTC014N10NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTC014N10NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTC014N10NM5ATMA1 part is unused and in its original packaging.

Return procedure for IPTC014N10NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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