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Infineon Technologies IPTC044N15NM5ATMA1

Part No.:
IPTC044N15NM5ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
16-PowerSOP Module
Datasheet:
AetrixIPTC044N15NM5ATMA1.pdf
Description:
OPTIMOS 5 POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:11

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Product details

Overview

IPTC044N15NM5 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency 150 V power conversion, featuring 4.4 mΩ max RDS(on), 174 A continuous drain current at TC = 25 °C, and 100% avalanche-tested ruggedness in PG-HDSOP-16 package. It serves as a primary switching device in industrial DC-DC converters, motor drives, and UPS inverters where low conduction loss and robust thermal performance are critical.

For engineers reviewing the IPTC044N15NM5 datasheet, IPTC044N15NM5 pinout, IPTC044N15NM5 application, or IPTC044N15NM5 equivalent, key selection criteria include its 0.5 °C/W junction-to-case thermal resistance, 71 nC total gate charge, 200 nC output charge, and validated operation up to 175 °C junction temperature in industrial-grade systems.

Technical Context

This OptiMOSTM 5-generation MOSFET employs trench-gate superjunction technology to achieve ultra-low RDS(on) while maintaining fast switching with 17 ns turn-on delay and 25 ns turn-off delay at VDD = 75 V, ID = 50 A. Its gate plateau voltage of 5.4 V ensures stable Miller region control during hard-switching transitions.

The integrated body diode delivers 45–91 ns reverse recovery time and 49–98 nC Qrr under 75 V reverse bias and 100 A/µs di/dt, enabling efficient synchronous rectification and freewheeling in half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 150 V - Maximum blocking voltage compatible with 120 V nominal bus systems with 25 % safety margin.
RDS(on), max 4.4 mΩ at VGS = 10 V, ID = 50 A - Enables ≤0.11 W conduction loss at 50 A, reducing heatsink requirements.
ID, cont 174 A at TC = 25 °C - Supports high-current phase-leg designs in 3-phase motor drives and server PSUs.
Qg 71 nC - Determines gate driver power requirement; enables <100 kHz PWM operation with standard 2 A drivers.
EAS 321 mJ - Confirmed single-pulse avalanche energy supports inductive load switching without snubbers.
RthJC 0.5 °C/W - Allows direct thermal coupling to heatsink via exposed drain tab (Pins 9–16 + Tab), minimizing junction temperature rise.
Qoss 200 nC - Defines output capacitance energy loss during hard-switching; impacts ZVS feasibility above 100 kHz.

Pinout & Package

Package: PG-HDSOP-16 - Thermally enhanced 16-pin surface-mount package with exposed drain tab for low-inductance, high-current PCB mounting and direct heatsink attachment.

Pin/Terminal Circuit Role Design Meaning
Pins 1–7 Source Low-side return path; paralleled pins reduce source inductance and improve current sharing in multi-phase layouts.
Pin 8 Gate Single-point gate connection; requires <1.6 Ω external series resistance to damp ringing per datasheet test condition.
Pins 9–16 + Tab Drain High-current power input/output node; exposed metal tab provides primary thermal path and mechanical anchoring.

Key Features

Feature Design Value
N-channel, normal-level logic drive Operates fully enhanced at VGS ≥ 10 V; compatible with standard 12 V gate drivers without level-shifting.
Superior thermal resistance 0.5 °C/W RthJC enables >250 W dissipation at ΔT = 125 °C, supporting compact thermal design.
100% avalanche tested Every unit validated to withstand 321 mJ single-pulse avalanche energy-no derating needed for inductive turn-off stress.
Pb-free & halogen-free RoHS-compliant plating and IEC61249-2-21 compliant materials ensure compliance with global environmental regulations.

Applications

Industrial Motor Drives Server & Telecom PSUs

Use Scenario: Three-phase inverter stage in 10–30 kW variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack configuration, operating at 8–16 kHz PWM frequency.

Use Value: 4.4 mΩ RDS(on) reduces conduction losses by >35 % vs. legacy 6.5 mΩ devices, improving system efficiency from 96.2 % to 97.1 % at full load.

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: Main switching transistor in asymmetric half-bridge topology, handling 100 A peak drain current.

Use Value: 0.5 °C/W RthJC allows direct heatsink mounting without thermal interface material, cutting thermal resistance by 40 % versus SO-8 packages.

Uninterruptible Power Supplies EV Onboard Chargers

Use Scenario: Bidirectional DC-AC inverter stage in 5 kVA online UPS systems with battery backup.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in dual-active-bridge topology.

Use Value: 200 nC Qoss and 45 ns trr enable zero-voltage switching across 90–100 % load range, reducing switching losses by 22 %.

Use Scenario: Isolated DC-DC stage in 11 kW OBC converting 400 V battery to 12 V auxiliary supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge converter.

Use Value: 174 A ID rating supports 150 A continuous output current with 15 % margin, eliminating parallel FETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N15F7AG Higher RDS(on) (5.2 mΩ), lower Qg (58 nC), same PG-HSOP-16 package Better suited for higher-frequency (>200 kHz) soft-switching where gate loss dominates Select when prioritizing gate drive efficiency over conduction loss in resonant topologies.
IXFH44N15X3 TO-247-3L package, higher RthJC (0.75 °C/W), 4.8 mΩ RDS(on), 100 V avalanche rating only Requires bolt-down heatsinking; not suitable for space-constrained SMT-only designs Choose only if existing TO-247 thermal infrastructure exists and board area permits larger footprint.

Compared with STL220N15F7AG and IXFH44N15X3, IPTC044N15NM5 delivers the lowest RDS(on) in SMT form factor with verified 150 V avalanche capability-making it optimal for thermally dense industrial inverters where conduction loss and ruggedness are primary constraints.

Availability

IPTC044N15NM5 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPTC044N15NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation and manufacturing excellence.

This device belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-reliability industrial power conversion where low RDS(on), rugged avalanche behavior, and thermally optimized packaging are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPTC044N15NM5 is rated for continuous operation up to Tj = 175 °C, as confirmed in Table 2 of the Rev. 2.1 datasheet. Derating curves in Diagram 2 show that ID remains ≥115 A at TC = 100 °C, supporting reliable operation in sealed enclosures with limited airflow.

Is this MOSFET suitable for use in synchronous rectification circuits?

Yes-the integrated body diode has characterized trr = 45–91 ns and Qrr = 49–98 nC at 75 V and 100 A/µs di/dt, enabling efficient synchronous rectification in LLC and phase-shifted full-bridge converters without external diode replacement.

Does the PG-HDSOP-16 package require solder paste stencil modifications?

Yes-the exposed drain tab (Pins 9–16 + metal pad) demands a 0.15 mm thick stencil with 75 % aperture fill ratio to ensure void-free thermal pad soldering. IPC-7351B land pattern DSO-16-17 is recommended for optimal thermal and mechanical reliability.

How does the 100% avalanche testing impact field reliability?

Each unit undergoes single-pulse avalanche stress at EAS = 321 mJ, verifying robustness against inductive turn-off transients. This eliminates latent infant mortality failures in motor drive and UPS applications where unclamped inductive spikes commonly occur.

IPTC044N15NM5ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
16-PowerSOP Module
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
19.4A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4.6V @ 235µA
Gate Charge (Qg) (Max) @ Vgs:
89 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7000 pF @ 75 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HDSOP-16-2

IPTC044N15NM5ATMA1 FAQ

1.How can I place an order for IPTC044N15NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTC044N15NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTC044N15NM5ATMA1 reliable?

The price and inventory of IPTC044N15NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTC044N15NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTC044N15NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTC044N15NM5ATMA1 transactions.

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IPTC044N15NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTC044N15NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTC044N15NM5ATMA1?

For technical support, including IPTC044N15NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTC044N15NM5ATMA1 requirements.

6.How does Aetrix verify that IPTC044N15NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTC044N15NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTC044N15NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTC044N15NM5ATMA1?

All IPTC044N15NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTC044N15NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTC044N15NM5ATMA1 part is unused and in its original packaging.

Return procedure for IPTC044N15NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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