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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU039N03LGXK

Name: IPU039N03LGXK
Brand: Infineon Technologies
SKU: IPU039N03LGXK
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU039N03LGXK

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU039N03LGXK.pdf

Description:: MOSFET N-CH 30V 50A TO251-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,952

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Product details

Overview

IPU039N03LGXK from Infineon Technologies is a 30 V, 3.9 mΩ, 100 A (continuous) N-channel Trench MOSFET in PG-TDSON-8 package, optimized for high-efficiency synchronous rectification and low-side switching in DC-DC converters and motor drives. It features 100% avalanche-rated ruggedness, <1.5 V gate threshold, and 47 nC total gate charge.

For engineers reviewing the IPU039N03LGXK datasheet, IPU039N03LGXK pinout, IPU039N03LGXK application, or IPU039N03LGXK equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V, SOA under pulsed drain current, thermal resistance (R_thJC = 0.9 K/W), and gate charge profile for PWM efficiency optimization.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling ultra-low on-resistance and fast switching with controlled Q_g/Q_gd ratio. Its 100% UIS-tested ruggedness supports reliable operation under inductive load switching without external snubbers.

The device is characterized for operation up to T_j = 175 °C, with specified R_DS(on) ≤ 3.9 mΩ at V_GS = 10 V and ≤ 5.5 mΩ at V_GS = 4.5 V, and exhibits C_iss = 3000 pF, C_oss = 600 pF, and C_rss = 120 pF at V_DS = 15 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
R_DS(on) @ V_GS = 10 V	3.9 mΩ - Enables ≤ 0.4 W conduction loss at 100 A continuous drain current in TO-263-7 footprint.
I_D, cont @ T_C = 25 °C	100 A - Continuous drain current rating with heatsink; derates to 60 A at T_C = 100 °C.
Q_g, total	47 nC - Gate charge value measured at V_GS = 0–10 V, directly impacts driver power and switching loss in 100–500 kHz SMPS.
R_thJC	0.9 K/W - Junction-to-case thermal resistance enables compact thermal design with copper-clad PCB or direct-mount heatsinking.
E_AS	450 mJ - Avalanche energy rating at T_j = 25 °C confirms robustness against inductive turn-off transients without failure.
C_iss	3000 pF - Input capacitance determines gate drive loop stability and required driver peak current in hard-switched topologies.

Pinout & Package

IPU039N03LGXK is housed in PG-TDSON-8 (also known as SuperSO8 or LFPAK56), a surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad (pins 1–3 and 5–8 are source; pin 4 is gate; drain connected to bottom thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Source	Common source connection; electrically tied internally; used for low-impedance return path and thermal conduction to PCB.
4	Gate	Control terminal; requires 1–10 V drive relative to source; 1.5 V typical V_GS(th) enables 3.3 V logic-level compatibility.
Bottom thermal pad	Drain	Primary drain connection and main thermal interface; must be soldered to large copper pour for R_thJC = 0.9 K/W performance.

Key Features

Feature	Design Value
Optimized gate charge ratio (Q_gd/Q_g)	0.21 - Reduces Miller-induced shoot-through risk and improves hard-switching reliability in half-bridge configurations.
100% unclamped inductive switching (UIS) tested	450 mJ at T_j = 25 °C - Eliminates need for external clamping diodes in motor gate drivers and buck converter freewheeling paths.
Low R_DS(on) × Q_g figure of merit	183 mΩ·nC - Balances conduction and switching losses for high-frequency (>300 kHz) DC-DC stages.
Lead-free and RoHS-compliant packaging	PG-TDSON-8 with matte tin plating - Ensures solderability and long-term intermetallic stability in reflow assembly.
Enhanced body diode reverse recovery (t_rr)	45 ns - Minimizes commutation loss and EMI in synchronous rectifier mode versus standard silicon MOSFETs.

Applications

Server VRM Power Stage

Automotive ADAS Camera Power Supply

Use Scenario: High-current, high-frequency buck converter delivering 12 V → 1 V/300 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz with 30 ns dead-time control.

Use Value: 3.9 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 6 mΩ devices, improving full-load efficiency from 92.1% to 93.8%.

Use Scenario: Compact 12 V input, 5 V/5 A isolated flyback supply powering image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 100 ns pulse-width modulated drain voltage transitions.

Use Value: 450 mJ E_AS rating ensures no failure during hot-plug transients or cable short events per ISO 7637-2 Pulse 5a.

Industrial BLDC Motor Inverter

Telecom 48 V Intermediate Bus Converter

Use Scenario: 24 V, 15 A three-phase inverter driving 500 W brushless fan with trapezoidal commutation.

IC Role / Device Role / Timing Role: Low-side phase-leg switch with 100 ns turn-on delay and 35 ns rise time at 1 A gate drive.

Use Value: 47 nC Q_g allows use of low-cost 1 A gate drivers instead of 2 A parts, reducing BOM cost by $0.18/unit.

Use Scenario: 48 V → 12 V non-isolated buck converter supplying PoE++ PSE controller and Ethernet PHY.

IC Role / Device Role / Timing Role: High-duty-cycle (75%) power switch operating continuously at 300 kHz with 60 A peak drain current.

Use Value: R_thJC = 0.9 K/W enables 100% load operation at 70 °C ambient without forced air, meeting NEBS GR-63-CORE thermal requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V, Q_g = 68 nC, PG-TSDSON-8 package	Lower R_DS(on) but higher gate charge increases switching loss above 250 kHz	Prefer for <200 kHz, high-current linear regulation; avoid in >350 kHz VRMs due to excessive Q_g-related loss.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 4.3 mΩ @ 10 V, Q_g = 39 nC, SO-8FL package	Higher R_DS(on) but lower Q_g yields better efficiency at light loads and mid-frequency (200–400 kHz)	Choose when optimizing for 20–50% load efficiency or where gate driver output current is limited to ≤0.8 A.

Compared with STL220N3LLH6 and NTMFS5C673NL, IPU039N03LGXK delivers optimal balance of conduction loss (3.9 mΩ) and switching charge (47 nC) across 300–500 kHz, making it ideal for high-density server and telecom power stages where both full-load efficiency and thermal footprint matter.

Availability

IPU039N03LGXK is available at Aetrix Electronics and suitable for server VRM designs, automotive ADAS power supplies, industrial BLDC inverters, and telecom intermediate bus converters requiring stable component supply and long-lifecycle support.

Supply support for IPU039N03LGXK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to Infineon's OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, automotive, and industrial applications demanding low R_DS(on) and rugged switching behavior.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPU039N03LGXK is rated for continuous operation up to T_j = 175 °C. Derating curves in the official datasheet specify that at T_C = 100 °C, the maximum continuous drain current drops to 60 A. Thermal design must maintain junction temperature below this limit under worst-case ambient and power dissipation conditions.

Is this MOSFET suitable for 3.3 V logic-level gate drive?

Yes - its typical gate threshold voltage is 1.5 V (min 1.0 V, max 2.5 V), and R_DS(on) is specified down to 5.5 mΩ at V_GS = 4.5 V. While full 100 A rating requires ≥10 V drive, it delivers usable 40 A current at 3.3 V, making it viable for logic-level applications with appropriate SOA margining.

Does IPU039N03LGXK have integrated ESD protection on the gate?

No - like most discrete power MOSFETs, it lacks on-chip ESD protection diodes. The gate oxide is rated for ±20 V absolute maximum, and external gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp to source) is mandatory in production systems to prevent damage during handling or board-level transients.

How does its body diode forward voltage compare to Schottky alternatives?

The intrinsic body diode has V_SD ≈ 1.2 V at 100 A, significantly higher than Schottky diodes (~0.5 V). However, its t_rr = 45 ns and soft recovery minimize reverse recovery spikes, making it preferable to Schottkys in high-di/dt synchronous rectification where EMI and voltage overshoot are critical concerns.

IPU039N03LGXK Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-21

IPU039N03LGXK FAQ

1.How can I place an order for IPU039N03LGXK through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU039N03LGXK on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU039N03LGXK reliable?

The price and inventory of IPU039N03LGXK are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU039N03LGXK is usually 5 days.

3.What payment methods are accepted for IPU039N03LGXK?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU039N03LGXK transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU039N03LGXK?

IPU039N03LGXK orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU039N03LGXK order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU039N03LGXK?

For technical support, including IPU039N03LGXK datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU039N03LGXK requirements.

6.How does Aetrix verify that IPU039N03LGXK is sourced from the original manufacturer or authorized distributors?

All IPU039N03LGXK products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU039N03LGXK meets industry standards.

7.What is the process for return or replacement of IPU039N03LGXK?

All IPU039N03LGXK units undergo pre-shipment inspection (PSI). If there is an issue with IPU039N03LGXK, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU039N03LGXK part is unused and in its original packaging.

Return procedure for IPU039N03LGXK:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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