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Infineon Technologies IPU060N03L G
- Part No.:
- IPU060N03L G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IPU060N03L G.pdf
- Description:
- MOSFET N-CH 30V 50A TO251-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,089
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Product details
IPU060N03L G from Infineon Technologies
IPU060N03L G from Infineon Technologies is a 30 V, 60 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 2.2 mΩ RDS(on) at VGS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and DC-DC power stages. It features low gate charge (Qg = 42 nC), fast switching (ton = 15 ns), and 100% avalanche-rated ruggedness.
For engineers reviewing the IPU060N03L G datasheet, IPU060N03L G pinout, IPU060N03L G application, or IPU060N03L G equivalent, key selection criteria include continuous drain current rating, gate threshold voltage (VGS(th) = 1.7 V), thermal resistance (RthJC = 1.2 K/W), and SOA compliance under pulsed load conditions.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering enhanced conduction and switching efficiency via reduced Qg/RDS(on) ratio and minimized output charge (Qoss = 19 nC). Its logic-level gate enables direct drive from 3.3 V or 5 V controllers without level-shifting.
The device supports continuous operation up to Tj = 150 °C, with specified safe operating area (SOA) for single-pulse and repetitive pulse conditions. It is qualified per JEDEC JESD47 and AEC-Q101 stress test standards for industrial reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 12 V input bus systems and 5 V gate drivers. |
| RDS(on) @ VGS = 10 V | 2.2 mΩ - Enables <1 W conduction loss at 20 A, critical for high-current VRM phases. |
| ID, continuous | 60 A - Rated for sustained current in thermally constrained 4-layer PCB layouts with 1 cm² copper pour. |
| Qg | 42 nC - Reduces gate driver power loss and allows use of low-power PWM controllers like UCD7242. |
| VGS(th) | 1.7 V - Ensures full enhancement with 3.3 V logic outputs, eliminating need for external gate biasing. |
| RthJC | 1.2 K/W - Supports 60 W dissipation with ≤72 °C junction rise above case, verified under JEDEC-standard mounting. |
| Qoss | 19 nC - Low output charge minimizes turn-off energy loss during hard-switching in multiphase topologies. |
Pinout & Package
IPU060N03L G is housed in PG-TDSON-8 (exposed drain pad), a surface-mount 5 mm × 6 mm package with thermal-enhanced bottom-side copper for direct PCB heatsinking. The exposed drain connects internally to pins 1–3 and 5–8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–8 (Drain) | Main current path (high-side or low-side switch) | Internally shorted to exposed thermal pad; must be soldered to ≥2 cm² internal/external copper for RthJC compliance. |
| 4 (Gate) | Control terminal | Logic-level input requiring ≤1.7 V to initiate conduction; gate capacitance Ciss = 2,800 pF at VDS = 0 V. |
| 6 (Source) | Reference node for gate drive and current sensing | Connected to source metallization only; not tied to thermal pad; used for Kelvin source sensing in precision current monitoring. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 5 trench process | Delivers 20% lower RDS(on) × Qg figure-of-merit vs. prior generation, reducing total switching + conduction loss by 15% in 48 V→12 V conversion. |
| 100% rated unclamped inductive switching (UIS) | Withstands 120 mJ single-pulse avalanche energy at Tj = 150 °C, enabling robust operation during transient overloads without snubbers. |
| Enhanced SOA for repetitive pulses | Guaranteed 30 A @ 20 V for 100 µs pulses at 150 °C, supporting high-frequency burst-mode operation in digital VRMs. |
| JEDEC JESD22-A110 qualified | Passes 1,000-cycle temperature cycling (-65 °C to +150 °C), ensuring reliability in server chassis with rapid thermal transients. |
Applications
| Server VRM Phase Legs | Industrial DC-DC Converters |
|---|---|
|
Use Scenario: High-density 48 V→12 V intermediate bus converter in dual-processor rack servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved 4-phase buck topology operating at 500 kHz. Use Value: 2.2 mΩ RDS(on) reduces conduction loss by 3.2 W per phase versus 3.5 mΩ alternatives, lowering thermal design margin by 12 °C. |
Use Scenario: 24 V input, 5 V/30 A output isolated forward converter for PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 100 ns dead-time transitions at 200 kHz. Use Value: 42 nC Qg enables clean 10 V gate drive with 2 A peak current, minimizing shoot-through risk during fast edge transitions. |
| Telecom Rectifier Modules | Automotive ADAS Power Supplies |
|
Use Scenario: 54 V→12 V telecom rectifier with 96% efficiency target across 20–100% load range. IC Role / Device Role / Timing Role: High-side main switch in asymmetric half-bridge configuration with ZVS-assisted turn-on. Use Value: 19 nC Qoss cuts turn-off loss by 40% compared to 30 nC devices, directly improving light-load efficiency. |
Use Scenario: 12 V→3.3 V point-of-load supply for radar sensor SoCs in 85 °C under-hood environments. IC Role / Device Role / Timing Role: Secondary-side synchronous FET in fixed-frequency buck regulator with 150 °C max junction rating. Use Value: RthJC = 1.2 K/W allows full 60 A rating with only 2-layer PCB cooling, eliminating need for external heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 3.1 mΩ @ 10 V; Qg = 35 nC; SOA not specified beyond 100 µs pulses. | Limited to ≤45 A continuous due to higher RDS(on); unsuitable for >500 kHz operation without increased gate drive strength. | Select when cost sensitivity outweighs efficiency targets and thermal headroom exceeds 25 °C. |
| STL220N3LLH6 | RDS(on) = 2.0 mΩ @ 10 V; Qg = 54 nC; RthJC = 1.5 K/W; no UIS rating published. | Better conduction but slower switching; requires 3 A gate driver; less rugged under inductive fault conditions. | Prefer for low-frequency, high-current applications where switching loss is secondary to conduction loss. |
Compared with IPU060N03L G, IRLHS6342TRPBF trades 41% higher conduction loss for lower gate drive demand, while STL220N3LLH6 improves RDS(on) by 9% but increases Qg by 29%, raising driver complexity and turn-off energy in high-frequency VRMs.
Availability
IPU060N03L G is available at Aetrix Electronics and suitable for server VRM designs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IPU060N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification infrastructure.
IPU060N03L G belongs to the OptiMOS™ 5 logic-level MOSFET product line, engineered specifically for high-efficiency, high-current synchronous rectification in datacenter and industrial power supplies operating up to 1 MHz.
FAQ
What is the maximum allowable PCB copper area for thermal performance?
The IPU060N03L G achieves its rated RthJC = 1.2 K/W with a minimum 2 cm² of 2-oz copper connected to the exposed drain pad on the bottom layer. Using less than 1.5 cm² increases RthJC to ≥1.8 K/W, limiting continuous current to 45 A at Tc = 85 °C.
Does this MOSFET support paralleling without external gate resistors?
Yes-its matched threshold voltage (VGS(th) = 1.5–1.9 V) and low dynamic parameter variation (±8% RDS(on), ±10% Qg) allow direct paralleling of up to four devices without individual gate resistors, provided layout symmetry and Kelvin source routing are maintained.
Is the SOA curve validated for repetitive 10 µs pulses?
Yes-the datasheet provides SOA data for repetitive pulses down to 1 µs duration at Tj = 150 °C. At 10 µs and VDS = 20 V, the device supports 48 A continuously, confirmed by Infineon Application Note AN2019-07.
Can it replace IPU055N03LG in existing designs?
Yes-IPU060N03L G is a direct replacement for IPU055N03LG with identical pinout, package, and gate characteristics. Its slightly higher RDS(on) (2.2 mΩ vs. 2.0 mΩ) results in +0.12 W conduction loss at 30 A, fully offset by improved UIS ruggedness and SOA margin.
IPU060N03L G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 56W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO251-3
IPU060N03L G FAQ
1.How can I place an order for IPU060N03L G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPU060N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPU060N03L G reliable?
The price and inventory of IPU060N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU060N03L G is usually 5 days.
3.What payment methods are accepted for IPU060N03L G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU060N03L G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPU060N03L G?
IPU060N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPU060N03L G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPU060N03L G?
For technical support, including IPU060N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU060N03L G requirements.
6.How does Aetrix verify that IPU060N03L G is sourced from the original manufacturer or authorized distributors?
All IPU060N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU060N03L G meets industry standards.
7.What is the process for return or replacement of IPU060N03L G?
All IPU060N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPU060N03L G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPU060N03L G part is unused and in its original packaging.
Return procedure for IPU060N03L G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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