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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU06N03LB G

Name: IPU06N03LB G
Brand: Infineon Technologies
SKU: IPU06N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU06N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU06N03LB G.pdf

Description:: MOSFET N-CH 30V 50A TO251-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,064

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Product details

Overview

IPU06N03LB from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO251-3 package, rated for 30 V V_DS, 5.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 175 °C maximum junction temperature and dv/dt rating up to 6 kV/µs - deployed in high-frequency DC/DC converters for server VRMs and telecom POL modules.

For engineers reviewing the IPU06N03LB datasheet, IPU06N03LB pinout, IPU06N03LB application, or IPU06N03LB equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), robust avalanche energy (210 mJ), and thermal resistance (R_thJC = 1.6 K/W), critical for thermally constrained synchronous buck topologies.

Technical Context

This MOSFET employs a trench-based silicon process optimized for high switching frequency operation, featuring a gate plateau voltage of 3.1 V and total gate charge of 19–25 nC. Its reverse diode supports synchronous rectification with Q_rr ≤ 10 nC and V_SD = 0.92–1.2 V at 50 A and 25 °C.

The device is dv/dt rated for reliable operation under fast transient conditions (di/dt = 200 A/µs), and qualified per JEDEC standards for industrial and telecom power applications. Thermal design leverages low R_thJC and 6 cm² PCB copper area for effective junction-to-case heat transfer.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Supports 12 V and 24 V input bus systems with margin for transients.
R_DS(on) max	5.8 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1 W conduction loss at 50 A in compact layouts.
Q_g total	19–25 nC - Low gate drive power requirement for >500 kHz PWM operation.
E_AS	210 mJ (I_D = 50 A) - Withstands single-pulse inductive energy without failure in hard-switched converters.
R_thJC	1.6 K/W - Allows direct heatsink mounting on TO-251 leadframe for efficient thermal path.
T_j,max	175 °C - Enables operation in high-ambient environments like base station power supplies.
dv/dt Rating	6 kV/µs - Resists false turn-on during high-slew-rate switching transitions.

Pinout & Package

IPU06N03LB uses the PG-TO251-3 surface-mount package (also known as IPAK), with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain tab provides low-inductance, low-thermal-resistance connection to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Primary thermal and electrical path for high-current output; requires soldered copper area ≥6 cm² for rated P_tot.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance return path; critical for stable gate control in synchronous FET configurations.
Gate (Pin 2)	Control electrode for channel formation	Logic-level compatible (V_GS(th) = 1.2–2.0 V); drives fully with 4.5 V supply in high-efficiency POL designs.

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~115 nC·mΩ - Balances switching loss and conduction loss for 300–1000 kHz DC/DC operation.
Enhanced dv/dt immunity	Rated to 6 kV/µs - Eliminates need for external gate snubbers in fast-switching topologies.
Robust body diode	Q_rr ≤ 10 nC, V_SD ≤ 1.2 V - Reduces reverse recovery loss and EMI in synchronous rectification.
High-temperature capability	175 °C T_j,max with full R_DS(on) derating - Supports sealed or high-ambient industrial power modules.

Applications

Server VRM

Telecom POL

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500–800 kHz with tight duty cycle control.

Use Value: Low R_DS(on) and Q_g minimize combined conduction + switching losses, improving VRM efficiency by ≥0.5% at full load.

Use Scenario: Point-of-load regulator in 48 V telecom infrastructure powering FPGA, ASIC, or DSP subsystems.

IC Role / Device Role / Timing Role: Low-voltage, high-frequency power switch in isolated or non-isolated buck stage.

Use Value: 175 °C rating and low R_thJC enable reliable operation in confined, fanless enclosures with ambient up to 85 °C.

Industrial Motor Drive

LED Driver

Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver IC auxiliary power stage.

IC Role / Device Role / Timing Role: Logic-level driven high-side FET for bootstrap-supplied gate drive circuitry.

Use Value: V_GS(th) of 1.2–2.0 V ensures clean turn-on with standard 3.3 V or 5 V microcontroller GPIO outputs.

Use Scenario: Constant-current switching element in high-power LED string drivers for street lighting.

IC Role / Device Role / Timing Role: Primary PWM-controlled current switch in buck or boost topology.

Use Value: Avalanche-rated structure tolerates inductive kickback from long LED strings without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB054N03LG	R_DS(on) = 4.8 mΩ (lower), Q_g = 27 nC (higher), PG-TO263-3 package	Larger footprint; higher thermal mass but less suitable for ultra-thin PCBs	Preferred when lower conduction loss dominates over gate drive loss and board space allows D2PAK.
IRLML6344TRPBF	R_DS(on) = 23 mΩ (higher), Q_g = 3.2 nC (much lower), SOT-23 package	Lower current rating (4.3 A), unsuitable for >10 A applications	Only viable for low-power auxiliary rails where size and gate drive simplicity outweigh efficiency needs.

Compared with IPU06N03LB, IPB054N03LG delivers better conduction efficiency but demands more gate drive energy and board area, while IRLML6344TRPBF trades significant R_DS(on) penalty for extreme miniaturization - making IPU06N03LB the balanced choice for 30–60 A mid-power DC/DC stages.

Availability

IPU06N03LB is available at Aetrix Electronics and suitable for server VRMs, telecom POL regulators, and industrial motor drive auxiliary power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPU06N03LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion with optimized trade-offs between R_DS(on), gate charge, and ruggedness - specifically engineered for next-generation DC/DC converters in computing and communications infrastructure.

FAQ

Is IPU06N03LB suitable for synchronous rectification?

Yes. Its integrated body diode has Q_rr ≤ 10 nC and V_SD ≤ 1.2 V at 50 A and 25 °C, enabling efficient synchronous rectification in buck converters without external Schottky diodes. The low R_DS(on) further reduces forward conduction loss compared to discrete diodes.

What is the recommended gate resistor for 600 kHz operation?

A 2.7 Ω gate resistor is validated in the datasheet for 600 kHz switching with R_G = 2.7 Ω, V_DD = 15 V, and I_D = 25 A. This value balances switching speed (t_r = 6–9 ns, t_f = 4.2–6.3 ns) and gate drive stability, minimizing ringing while avoiding excessive EMI.

Can IPU06N03LB be used without a heatsink in a 2-layer PCB?

Yes, if the PCB provides ≥6 cm² of 70 µm thick copper on FR4 (vertical orientation, still air), it achieves R_thJA = 40 K/W. At 50 A and 5.8 mΩ, power dissipation is ~14.5 W - resulting in ~580 K rise above ambient, exceeding safe limits. Therefore, a heatsink or forced airflow is required for continuous 50 A operation.

Does IPU06N03LB support 3.3 V logic-level gate drive?

Yes. With V_GS(th) = 1.2–2.0 V and R_DS(on) = 7.3–9.1 mΩ at V_GS = 4.5 V, it fully enhances using 3.3 V logic when paired with appropriate gate driver buffering. However, R_DS(on) increases ~50% versus 10 V drive, so 3.3 V use is limited to <30 A continuous current for thermal safety.

IPU06N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPU06N03LB G FAQ

1.How can I place an order for IPU06N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU06N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU06N03LB G reliable?

The price and inventory of IPU06N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU06N03LB G is usually 5 days.

3.What payment methods are accepted for IPU06N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU06N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU06N03LB G?

IPU06N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU06N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU06N03LB G?

For technical support, including IPU06N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU06N03LB G requirements.

6.How does Aetrix verify that IPU06N03LB G is sourced from the original manufacturer or authorized distributors?

All IPU06N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU06N03LB G meets industry standards.

7.What is the process for return or replacement of IPU06N03LB G?

All IPU06N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPU06N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU06N03LB G part is unused and in its original packaging.

Return procedure for IPU06N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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