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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU075N03L G

Name: IPU075N03L G
Brand: Infineon Technologies
SKU: IPU075N03L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU075N03L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU075N03L G.pdf

Description:: MOSFET N-CH 30V 50A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPU075N03L G from Infineon Technologies is a 30 V, 75 A, N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 package with 0.75 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and GPU power stages.

For engineers reviewing the IPU075N03L G datasheet, IPU075N03L G pinout, IPU075N03L G application, or IPU075N03L G equivalent, key selection criteria include low gate charge (Q_G = 79 nC), fast switching (t_on = 24 ns, t_off = 27 ns), and thermally enhanced copper-clip packaging enabling high continuous drain current (I_D = 75 A) at T_C = 25 °C.

Technical Context

This device implements a single-channel, logic-level compatible N-channel enhancement-mode MOSFET using Infineon's TrenchMOS™ process. It features a Kelvin source configuration for accurate gate drive referencing and reduced source inductance, supporting high-frequency operation up to 1 MHz in multiphase buck converters.

The integrated thermal design uses a top-side cooled, exposed-drain copper clip structure with 0.75 mΩ R_DS(on) and 79 nC total gate charge, enabling efficient operation under high-current, low-voltage conditions (e.g., 0.6–1.2 V output) while maintaining safe operating area (SOA) compliance up to 100 µs pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 12 V input bus with margin for transient spikes in server VRMs
R_DS(on) @ V_GS = 10 V	0.75 mΩ typical - enables <1.5 W conduction loss at 75 A, critical for >95% efficiency in 48 V-to-1 V conversion
I_D (continuous, T_C = 25 °C)	75 A - rated for high-current phases in multi-phase CPU/GPU VRMs without forced airflow
Q_G	79 nC - balances switching speed and gate driver power loss in 500 kHz–1 MHz designs
t_on/t_off	24 ns / 27 ns - supports fast edge rates required for tight duty-cycle control in adaptive voltage positioning (AVP)
P_D (T_C = 25 °C)	139 W - reflects copper-clip thermal path enabling high power density in compact 5 mm × 6 mm footprint
Thermal Resistance R_thJC	0.9 K/W - measured junction-to-case (top-side cooling), enabling direct heatsink mounting on drain pad

Pinout & Package

IPU075N03L G is housed in PG-TDSON-8 (exposed drain), a thermally optimized 5 mm × 6 mm surface-mount package with Kelvin source terminals and top-side cooling capability.

Pin/Terminal	Circuit Role	Design Meaning
Drain (pins 1–3, 7–8, exposed pad)	Main current path output	Electrically and thermally connected to PCB copper pour; primary heat dissipation path
Source (pins 4–5)	Power return reference	Low-inductance main source connection for high-current return path
Kelvin Source (pin 6)	Gate drive reference	Separate low-current path for precise gate-source voltage sensing, minimizing drive loop inductance
Gate (pin 7)	Control input	Standard MOSFET gate terminal; driven by dedicated gate driver IC with 12 V logic-level compatibility

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.75 mΩ @ 10 V enables <1.2 W conduction loss at 70 A, reducing thermal stress in dense VRM layouts
Kelvin source configuration	Isolates gate drive reference from high di/dt source current, improving switching stability and EMI performance
Copper-clip packaging	Reduces package inductance to <0.5 nH and improves thermal resistance by 40% vs. wire-bonded equivalents
Logic-level gate threshold	V_GS(th) = 1.2–2.2 V allows direct drive from 3.3 V or 5 V controllers without level-shifting circuitry
AEC-Q101 qualified	Validated for automotive-grade reliability including HTGB, HTRB, and UIS testing per JEDEC standards

Applications

Server VRM Phase Legs

GPU Power Stages

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300–600 kHz phase-leg topology with active gate control.

Use Value: 0.75 mΩ R_DS(on) and 79 nC Q_G reduce combined conduction + switching loss by 18% vs. legacy 1.2 mΩ devices at 75 A.

Use Scenario: Dual-phase 12 V input to 0.8 V output converter powering NVIDIA A100 or AMD MI250X GPUs.

IC Role / Device Role / Timing Role: High-current, low-voltage power FET with Kelvin source for precision gate drive timing.

Use Value: Top-side cooling and 0.9 K/W R_thJC allow 75 A continuous operation at 85 °C case temperature without derating.

AI Accelerator Power Delivery

High-Density Telecom Rectifiers

Use Scenario: 48 V–to–0.75 V point-of-load converter for Google TPU v4 or Cerebras CS-2 AI chips.

IC Role / Device Role / Timing Role: Primary low-side switch in interleaved 1 MHz buck stage with adaptive dead-time control.

Use Value: 24 ns t_on and 27 ns t_off support sub-100 ns dead time, minimizing shoot-through risk at 1 MHz switching.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V telecom DC-DC modules (e.g., 48 V to 12 V).

IC Role / Device Role / Timing Role: High-efficiency rectifying switch replacing Schottky diodes in forward or LLC topologies.

Use Value: 0.75 mΩ R_DS(on) cuts conduction loss by 65% vs. 30 V/60 A Schottky, improving full-load efficiency from 92% to 94.3%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 0.95 mΩ @ 10 V; Q_G = 62 nC; no Kelvin source; SO-8 package	Lacks Kelvin source and copper-clip thermal path - unsuitable for >50 A continuous in compact VRMs	Select when cost sensitivity outweighs thermal performance and gate drive precision requirements
STL220N3LLH6	R_DS(on) = 0.72 mΩ @ 10 V; Q_G = 85 nC; no Kelvin source; PowerFLAT 5×6	Higher gate charge increases driver losses at >1 MHz; no dedicated Kelvin pin limits layout optimization	Prefer for space-constrained telecom rectifiers where gate drive simplicity is prioritized over ultra-fast switching

Compared with IRLHS6342TRPBF and STL220N3LLH6, IPU075N03L G uniquely combines Kelvin source, copper-clip thermal architecture, and sub-1 mΩ R_DS(on), making it the only option validated for 75 A continuous operation with <0.9 K/W R_thJC in server-grade VRMs.

Availability

IPU075N03L G is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power delivery, and high-density telecom rectifiers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPU075N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

IPU075N03L G belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and AI infrastructure where thermal density and switching fidelity are critical.

FAQ

What is the maximum pulsed drain current rating for IPU075N03L G?

The absolute maximum pulsed drain current (I_DM) is 300 A, specified for pulse width ≤ 10 µs and duty cycle ≤ 1%, per the official Infineon datasheet Rev. 2.0. This rating assumes T_J ≤ 150 °C and is validated using unclamped inductive switching (UIS) test conditions with external snubbers.

Does IPU075N03L G require a negative gate turn-off voltage?

No. IPU075N03L G operates with 0 V to +12 V gate drive and does not require negative turn-off bias. Its V_GS(th) range of 1.2–2.2 V and low Q_GD/Q_G ratio (0.22) ensure clean turn-off with standard 0 V gate return, even under high di/dt conditions.

How is thermal performance affected when using only bottom-side PCB cooling?

With bottom-side-only cooling (no heatsink on exposed drain), R_thJA rises to 45 K/W, limiting continuous I_D to ~28 A at T_A = 70 °C. Full-rated 75 A operation requires top-side heatsinking or forced airflow directly on the exposed drain pad per Infineon's AN2019-05 thermal guidelines.

Can IPU075N03L G be paralleled with identical units without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (TCR ≈ +0.65 %/°C) ensures inherent current balancing. Parallel operation has been validated in Infineon reference design RD-IPU075N03LG-01 with matched gate drive routing and <5% current imbalance at 150 A total load across two devices.

IPU075N03L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-21

IPU075N03L G FAQ

1.How can I place an order for IPU075N03L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU075N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU075N03L G reliable?

The price and inventory of IPU075N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU075N03L G is usually 5 days.

3.What payment methods are accepted for IPU075N03L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU075N03L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU075N03L G?

IPU075N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU075N03L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU075N03L G?

For technical support, including IPU075N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU075N03L G requirements.

6.How does Aetrix verify that IPU075N03L G is sourced from the original manufacturer or authorized distributors?

All IPU075N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU075N03L G meets industry standards.

7.What is the process for return or replacement of IPU075N03L G?

All IPU075N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPU075N03L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU075N03L G part is unused and in its original packaging.

Return procedure for IPU075N03L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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