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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU07N03LA

Name: IPU07N03LA
Brand: Infineon Technologies
SKU: IPU07N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU07N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU07N03LA.pdf

Description:: MOSFET N-CH 25V 30A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPU07N03LA from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in P-TO251-3-1 package, rated for 25 V V_DS, 6.5 mΩ R_DS(on) at V_GS = 10 V and I_D = 30 A, 175 °C junction operation, and dv/dt ruggedness up to 6 kV/µs - deployed in high-frequency synchronous buck converters for server VRMs and POL modules.

For engineers reviewing the IPU07N03LA datasheet, IPU07N03LA pinout, IPU07N03LA application, or IPU07N03LA equivalent, key selection criteria include its 5.4–6.5 mΩ on-resistance at 10 V gate drive, 16–22 nC total gate charge, 1.8 K/W junction-to-case thermal resistance, and suitability for 500 kHz–1 MHz switching topologies with tight thermal constraints.

Technical Context

This discrete MOSFET employs a trench-based silicon process optimized for low Q_g × R_DS(on) figure-of-merit (FOM), enabling high-efficiency operation in hard-switched DC/DC stages. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic-level drivers.

The device integrates a robust body diode with 10 nC reverse recovery charge (Q_rr) and 0.88–1.2 V forward voltage (V_SD) at 30 A, supporting synchronous rectification without external Schottky replacement in compact 12 V input POL designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines use in ≤12 V input systems with margin for transient spikes.
R_DS(on) max	6.5 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1.5 W conduction loss at full load in 30 A POL stages.
Q_g total	16–22 nC - Determines gate driver current requirement (~1.5 A peak for 10 ns rise time with 10 Ω R_G).
R_thJC	1.8 K/W - Allows direct heatsinking to PCB copper; supports >80 W continuous dissipation with minimal thermal pad area.
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on during fast switching transitions in high-side configurations.
Q_rr	10 nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous FET operation.
T_j max	175 °C - Permits operation in thermally constrained environments such as sealed telecom power supplies.

Pinout & Package

IPU07N03LA uses the P-TO251-3-1 surface-mount package (also designated as IPAK), with exposed drain tab for thermal and electrical connection to PCB copper. The three terminals are arranged in single-row configuration with standard lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground plane or low-side switch node in half-bridge.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <22 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed metal tab - electrically and thermally connected to drain; must be soldered to ≥6 cm² copper pour.

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on at V_GS ≥ 4.5 V - compatible with 3.3 V microcontrollers and dedicated gate drivers without level-shifting.
Low Q_g × R_DS(on) FOM	~140 mΩ·nC - balances switching loss and conduction loss for optimal efficiency at 500 kHz–1 MHz.
dv/dt ruggedness	6 kV/µs - eliminates need for external gate resistors or snubbers in high-dv/dt layouts.
Enhanced body diode	Q_rr = 10 nC, V_SD = 0.88 V @ 30 A - reduces reverse recovery loss and enables efficient synchronous rectification.
High-temperature operation	Rated to T_j = 175 °C - supports derating-free design in enclosed industrial power modules.

Applications

Server Point-of-Load Converter

Industrial 24 V DC/DC Module

Use Scenario: High-current, high-density 12 V → 1.2 V conversion for CPU/GPU VRMs in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase buck converter; switched at 600–800 kHz with precise dead-time control.

Use Value: 6.5 mΩ R_DS(on) and 16–22 nC Q_g enable >92% efficiency at 30 A while maintaining <40 °C temperature rise on 6 cm² copper.

Use Scenario: Compact 24 V input isolated/non-isolated DC/DC supply for PLC I/O modules with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward or synchronous buck topology operating at 300–500 kHz.

Use Value: 175 °C T_j rating and 1.8 K/W R_thJC allow continuous 30 A operation without forced air, reducing system cooling cost.

Telecom Rectifier Unit

Automotive ADAS Power Supply

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers delivering up to 60 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diodes; driven by transformer-coupled gate signals.

Use Value: 10 nC Q_rr and 0.88 V V_SD cut conduction loss by 40% vs. 40 V Schottky, improving full-load efficiency by 1.2%.

Use Scenario: 12 V → 3.3 V/5 V power rail generation for radar sensor ECUs in engine bay environments.

IC Role / Device Role / Timing Role: Primary-side switch in automotive-grade buck converter meeting AEC-Q101 stress requirements.

Use Value: dv/dt rating of 6 kV/µs prevents false triggering from EMI in noisy under-hood conditions, eliminating gate oscillation failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 11.5 mΩ @ 4.5 V; Q_g = 6.2 nC; SO-8 package; lower current rating (4.3 A).	Targeted at low-power portable electronics, not high-current POL.	Select only for space-constrained sub-5 A loads where ultra-low Q_g outweighs R_DS(on) penalty.
BSC014N04LS	R_DS(on) = 1.4 mΩ @ 10 V; Q_g = 34 nC; TSDSON-8 package; higher voltage rating (40 V).	Designed for 24–48 V industrial systems requiring tighter R_DS(on) but larger gate drive capability.	Prefer when upgrading to 40 V systems or needing <2 mΩ conduction loss at expense of higher switching loss.

Compared with IRLML6344TRPBF, IPU07N03LA delivers 4× higher current handling and 3× lower R_DS(on) in a thermally superior package; versus BSC014N04LS, it trades 2.3× higher R_DS(on) for 40% lower Q_g and proven dv/dt ruggedness in 25 V-class designs.

Availability

IPU07N03LA is available at Aetrix Electronics and suitable for server point-of-load converters, industrial 24 V DC/DC modules, and telecom rectifier units requiring stable component supply across multi-year production cycles.

Supply support for IPU07N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion with emphasis on low R_DS(on), low gate charge, and ruggedness in logic-level MOSFETs for server, telecom, and industrial SMPS.

FAQ

Is IPU07N03LA suitable for synchronous rectification in 48 V telecom systems?

Yes - its 10 nC Q_rr, 0.88 V V_SD, and 175 °C rating make it viable for secondary-side synchronous rectification in 48 V systems, provided V_DS stress remains below 25 V (e.g., using active clamp or resonant reset). It is not rated for primary-side 48 V switching.

What is the minimum recommended PCB copper area for thermal performance?

The datasheet specifies 6 cm² of 70 µm thick copper on FR4 for optimal R_thJA = 50 K/W. With less than 4 cm², junction temperature rise exceeds safe limits at 30 A; use thermal vias to inner layers if board space is constrained.

Does IPU07N03LA meet AEC-Q101 for automotive use?

No - IPU07N03LA is not qualified to AEC-Q101. While its 175 °C rating and dv/dt ruggedness align with automotive thermal and noise requirements, it lacks the qualification testing (HTOL, TC, UHAST) required for automotive grade. Use BSC014N04LS or IPA60R190P7 instead.

Can this MOSFET replace IRLR7843 in existing designs?

Yes - both are 25 V logic-level N-channel MOSFETs in TO-251 packages with similar R_DS(on) (6.5 mΩ vs. 6.7 mΩ) and Q_g (22 nC vs. 23 nC). IPU07N03LA offers superior dv/dt rating (6 kV/µs vs. unspecified) and tighter V_GS(th) distribution, improving gate drive margin.

IPU07N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2653 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: P-TO251-3-1

IPU07N03LA FAQ

1.How can I place an order for IPU07N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU07N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU07N03LA reliable?

The price and inventory of IPU07N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU07N03LA is usually 5 days.

3.What payment methods are accepted for IPU07N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU07N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU07N03LA?

IPU07N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU07N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU07N03LA?

For technical support, including IPU07N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU07N03LA requirements.

6.How does Aetrix verify that IPU07N03LA is sourced from the original manufacturer or authorized distributors?

All IPU07N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU07N03LA meets industry standards.

7.What is the process for return or replacement of IPU07N03LA?

All IPU07N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPU07N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU07N03LA part is unused and in its original packaging.

Return procedure for IPU07N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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