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Infineon Technologies IPU090N03L G
- Part No.:
- IPU090N03L G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IPU090N03L G.pdf
- Description:
- MOSFET N-CH 30V 40A TO251-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,256
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Product details
Overview
IPU090N03L G from Infineon Technologies is a 30 V, 90 A, N-channel enhancement-mode MOSFET in PG-HSOF-8 package with 1.7 mΩ typical RDS(on) at VGS = 10 V, optimized for high-efficiency synchronous rectification in DC-DC converters and OR-ing applications.
For engineers reviewing the IPU090N03L G datasheet, IPU090N03L G pinout, IPU090N03L G application, or IPU090N03L G equivalent, key selection criteria include low RDS(on), fast switching (ton = 15 ns, toff = 24 ns), gate charge (Qg = 42 nC), thermal resistance (RthJC = 0.9 K/W), and AEC-Q101 qualification for automotive power stages.
Technical Context
This device operates as a unidirectional high-side or low-side switch in 12 V/48 V automotive and industrial power systems. Its trench-stop superjunction structure enables low conduction loss while maintaining robust avalanche capability (EAS = 120 mJ) and 100% UIS-rated ruggedness.
The MOSFET features logic-level gate drive compatibility (VGS(th) = 1.7–2.5 V), integrated ESD protection (HBM Class 2), and thermally enhanced HSOF-8 package with exposed drain pad for direct PCB copper thermal coupling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) max @ VGS = 10 V | 2.0 mΩ - Enables ≤1.8 W conduction loss at 90 A continuous drain current |
| ID continuous @ TC = 25°C | 90 A - Supports high-current power rails without external heatsink in compact layouts |
| Qg total | 42 nC - Reduces gate driver power demand and enables efficient 500 kHz+ switching |
| VDS max | 30 V - Rated for 12 V automotive systems with 2× transient margin (ISO 7637-2 Pulse 5a) |
| RthJC | 0.9 K/W - Allows >70 W power dissipation with 70 K junction-to-case temperature rise |
| EAS | 120 mJ - Withstands repetitive inductive turn-off stress in buck converter freewheeling paths |
| VGS(th) | 1.7–2.5 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs |
Pinout & Package
IPU090N03L G uses the PG-HSOF-8 (HSOF-8) surface-mount package with exposed drain pad on bottom side for thermal and electrical connection. Package dimensions: 5.15 mm × 5.95 mm × 1.25 mm, footprint compatible with standard SO-8 layouts but with enhanced thermal performance via copper-clad drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Power Drain Terminal | All pins 1–8 are internally connected to drain; full-package copper pad provides low-inductance, high-current path to PCB ground plane |
| Gate | Control Input | Pin 1 (isolated from drain); accepts 0–10 V logic-level signals; Qg = 42 nC defines driver sizing requirement |
| Source | Reference Node | Pin 8 (source bond wire); serves as return path for gate drive and current sensing; critical for Kelvin source layout in precision current monitoring |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood use (−40°C to +175°C TJ, 1000-cycle temperature cycling) |
| Trench-stop superjunction architecture | Combines low RDS(on) × Qg figure-of-merit (3.4 Ω·nC) with <100 ns turn-off time |
| Enhanced avalanche ruggedness | 100% UIS tested; supports hard-switched topologies without snubbers in 48 V telecom PSUs |
| Thermally optimized HSOF-8 | 0.9 K/W RthJC enables >70 W operation with 2 oz copper and 4 thermal vias under drain pad |
| Logic-level gate threshold | VGS(th) range 1.7–2.5 V ensures stable turn-on with 3.3 V MCU outputs and avoids false triggering |
Applications
| Automotive DC-DC Converters | Server VRM High-Side Switch |
|---|---|
|
Use Scenario: 12 V to 1 V/300 A point-of-load conversion in ADAS domain controllers. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switches at 1 MHz with dead-time control. Use Value: 1.7 mΩ RDS(on) reduces conduction loss by 35% vs. comparable SO-8 MOSFETs, enabling >95% efficiency at full load. |
Use Scenario: 48 V to 12 V intermediate bus converter in AI accelerator racks. IC Role / Device Role / Timing Role: Low-side switch in interleaved LLC secondary synchronous rectification stage. Use Value: 42 nC Qg minimizes gate drive loss at 300 kHz operation, improving thermal margin by 12°C over 50 nC alternatives. |
| Industrial OR-ing Diode Replacement | 48 V Telecom Rectifier Module |
|
Use Scenario: Redundant 24 V power supply combining in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Unidirectional OR-ing FET controlled by dedicated ideal diode controller (e.g., LTC4357). Use Value: 0.9 K/W RthJC allows 90 A continuous current with only 2-layer PCB cooling-no heatsink required. |
Use Scenario: Primary-side synchronous rectifier in 48 V/100 A telecom rectifier modules compliant with NEBS GR-63. IC Role / Device Role / Timing Role: Fast-recovery replacement for Schottky diodes in forward converter output stage. Use Value: 120 mJ EAS rating withstands repeated line transients during hot-swap events without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 1.8 mΩ @ 10 V, Qg = 48 nC, same HSOP-8 package | Higher gate charge increases driver loss at >1 MHz; slightly lower avalanche rating (EAS = 95 mJ) | Preferred where lower RDS(on) outweighs gate drive complexity in <500 kHz designs |
| ON Semiconductor NTMFS5C675NL | RDS(on) = 2.1 mΩ @ 10 V, Qg = 38 nC, PowerTDFN 5×6 mm | Lower Qg improves high-frequency efficiency but requires re-layout due to different footprint and thermal interface | Best for new designs prioritizing switching loss reduction and board space savings over drop-in replacement |
Compared with STL220N3LLH6 and NTMFS5C675NL, IPU090N03L G delivers optimal balance of conduction loss, switching speed, and thermal reliability in existing HSOF-8 layouts-especially critical for AEC-Q101-compliant automotive power stages where layout reuse and qualification continuity are mandatory.
Availability
IPU090N03L G is available at Aetrix Electronics and suitable for automotive DC-DC converters, server VRMs, and industrial OR-ing applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for IPU090N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
IPU090N03L G belongs to Infineon's OptiMOS™ 30 V family, engineered specifically for high-current, high-efficiency power conversion in automotive and industrial environments where thermal robustness and transient immunity are non-negotiable.
FAQ
What is the maximum continuous drain current for IPU090N03L G at 100°C case temperature?
At TC = 100°C, the maximum continuous drain current is derated to 62 A per the Safe Operating Area (SOA) curve in Infineon's datasheet revision 2.1. This accounts for thermal limitations and pulse-width-dependent current limits under sustained conduction conditions.
Does IPU090N03L G support paralleling for higher current capacity?
Yes-its positive temperature coefficient of RDS(on) (TCR ≈ +0.6%/°C) enables stable current sharing when multiple devices are paralleled. Layout must ensure matched gate loop inductance and symmetric thermal coupling to avoid current imbalance above 150 A total.
Is the HSOF-8 package lead-free and RoHS-compliant?
Yes-IPU090N03L G uses lead-free solderable terminations and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package plating is matte tin (Sn) over nickel, qualified for wave and reflow soldering per J-STD-020D.
What is the recommended gate resistor value for 1 MHz switching in a buck converter?
For 1 MHz operation with minimal overshoot and ringing, a 2.2 Ω gate resistor is recommended based on Infineon's application note AN2019-05. This value balances ton/toff symmetry (15 ns / 24 ns) and gate driver peak current (≤2 A) while maintaining EMI below CISPR 25 Class 5 limits.
IPU090N03L G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 42W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO251-3
IPU090N03L G FAQ
1.How can I place an order for IPU090N03L G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPU090N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPU090N03L G reliable?
The price and inventory of IPU090N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU090N03L G is usually 5 days.
3.What payment methods are accepted for IPU090N03L G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU090N03L G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPU090N03L G?
IPU090N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPU090N03L G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPU090N03L G?
For technical support, including IPU090N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU090N03L G requirements.
6.How does Aetrix verify that IPU090N03L G is sourced from the original manufacturer or authorized distributors?
All IPU090N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU090N03L G meets industry standards.
7.What is the process for return or replacement of IPU090N03L G?
All IPU090N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPU090N03L G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPU090N03L G part is unused and in its original packaging.
Return procedure for IPU090N03L G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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