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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU09N03LA G

Name: IPU09N03LA G
Brand: Infineon Technologies
SKU: IPU09N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU09N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU09N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO251-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,250

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Product details

Overview

IPU09N03LA G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO251-3-21 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 8.6 mΩ R_DS(on) (max) at V_GS = 10 V. It features 75 mJ single-pulse avalanche energy, 6 kV/µs di/dt ruggedness, and 175 °C maximum junction temperature-designed for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPU09N03LA G datasheet, IPU09N03LA G pinout, IPU09N03LA G application, or IPU09N03LA G equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), superior thermal resistance (R_thJC = 2.4 K/W), SMD-compatible TO251 footprint, and robust reverse diode with 50 A continuous forward current.

Technical Context

This device employs a trench-based OptiMOS®2 process optimized for high-switching-frequency synchronous rectification and high-side/low-side switching in buck converters. Its gate threshold voltage (1.2–2.0 V typ.) enables direct drive from 3.3 V or 5 V logic, while its low Crss (61–92 pF) and fast switching times (t_r = 5.6–8.4 ns, t_f = 3.4–5.1 ns) minimize switching losses under hard-switching conditions.

The integrated body diode exhibits low V_SD (0.97–1.2 V at 50 A, 25 °C) and low Q_rr (≤10 nC), supporting efficient synchronous FET operation and reducing dead-time losses. Thermal design is enabled by validated R_thJA values (50 K/W on 6 cm² copper) and JEDEC-qualified reliability for industrial and computing applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input rails and 5 V output stages in point-of-load converters.
R_DS(on) max	8.6 mΩ at V_GS = 10 V - Enables ≤2.15 W conduction loss at 50 A, critical for thermally constrained PCB layouts.
I_D cont.	50 A at T_C = 25 °C - Supports high-current POL stages without forced air cooling when mounted on ≥6 cm² copper.
E_AS	75 mJ - Withstands single-pulse inductive energy in non-isolated buck converters without failure.
Q_g	10–13 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching with standard gate drivers.
V_GS(th)	1.2–2.0 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO or PWM controller outputs.
R_thJC	2.4 K/W - Allows direct thermal path to heatsink or copper plane, enabling junction temperature control below 175 °C.

Pinout & Package

IPU09N03LA G uses the PG-TO251-3-21 package: a surface-mount variant of the TO-251 (IPAK) with gull-wing leads, 3-terminal configuration, and exposed drain pad for thermal enhancement. The package is RoHS-compliant and Pb-free.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal, connected to die substrate	Exposed metal pad on bottom side-must be soldered to large copper area for thermal and electrical performance.
Source (S)	Reference node for gate drive and current return path	Connected internally to source metallization; forms low-inductance return path for high di/dt switching.
Gate (G)	Control electrode for channel formation	High-impedance input requiring <13 nC charge; sensitive to ESD-requires proper layout guard ring and series resistor.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, eliminating need for level-shifting in 3.3 V control systems.
Low FOM (Q_g × R_DS(on))	~115 nC·mΩ - Balances switching and conduction losses for optimal efficiency in 300–1000 kHz DC/DC topologies.
175 °C rated junction	Enables operation in sealed enclosures or high-ambient environments without derating below full current rating.
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for moisture sensitivity and temperature cycling-suitable for automotive-adjacent industrial use.

Applications

Server Point-of-Load Converter

Industrial DC/DC Module

Use Scenario: High-density 12 V-to-1.2 V conversion feeding multi-core CPUs in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, switching at 600–800 kHz with precise dead-time control.

Use Value: 8.6 mΩ R_DS(on) and 10–13 nC Q_g reduce both conduction and gate drive losses, improving full-load efficiency by ≥0.8% vs. legacy MOSFETs.

Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: 75 mJ E_AS and 6 kV/µs dv/dt immunity ensure robust operation during transformer leakage spikes and load transients.

Telecom Power Supply

Embedded Computing PSU

Use Scenario: Compact 54 V-to-12 V telecom rectifier module operating in forced-air-cooled base stations.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving resonant LLC primary stage.

Use Value: 2.4 K/W R_thJC allows direct mounting to aluminum heatsink, maintaining T_j < 125 °C at 45 A continuous with 200 LFM airflow.

Use Scenario: Fanless 24 V-to-5 V/3.3 V power rail generation in edge AI inference modules.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck regulator with integrated controller (e.g., MP2315).

Use Value: 1.2–2.0 V V_GS(th) ensures clean turn-on from 3.3 V MCU GPIO, avoiding shoot-through during soft-start sequencing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD09N03LA G	PG-TO252-3-11 package; R_thJC = 2.4 K/W; same die, larger thermal pad area	Better thermal performance in board-space-constrained designs where TO252 footprint is acceptable	Select when PCB layout allows TO252 and lower junction temperature is prioritized over component height.
IPF09N03LA G	PG-TO252-3-23 package; identical R_DS(on), Q_g, and SOA; different leadform for automated assembly	Optimized for high-speed pick-and-place with tighter coplanarity tolerance	Choose for volume production lines requiring enhanced placement yield and reflow consistency.

Compared with IPD09N03LA G and IPF09N03LA G, IPU09N03LA G offers identical silicon performance but in the smaller, lower-profile PG-TO251-3-21 package-ideal for ultra-thin power modules where Z-height and board area are constrained, though with marginally higher R_thJA than TO252 variants.

Availability

IPU09N03LA G is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC/DC modules, and telecom power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPU09N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line delivers high-efficiency, high-reliability power MOSFETs optimized for high-frequency switching in computing, telecom, and industrial power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for IPU09N03LA G?

The absolute maximum V_GS is ±20 V, with operation above +15 V or below –5 V limited to duty cycles < 0.25 and junction temperature ≤150 °C. Continuous operation at ±20 V exceeds safe operating limits and risks gate oxide degradation. Recommended drive range is 0 to 10 V for logic-level compatibility and long-term reliability.

Does IPU09N03LA G have avalanche capability, and how is it specified?

Yes-IPU09N03LA G is rated for 75 mJ single-pulse avalanche energy (E_AS) at I_D = 45 A, R_GS = 25 Ω, and T_j = 25 °C. This rating reflects ruggedness against inductive switching stress in non-synchronous or fault conditions, validated per JEDEC standards. Repetitive avalanche is not characterized and must be avoided in design.

Can IPU09N03LA G be used as a synchronous rectifier in a 1 MHz buck converter?

Yes-its 10–13 nC total gate charge, 5.6–8.4 ns rise time, and 3.4–5.1 ns fall time enable efficient operation up to 1 MHz. However, gate driver strength (≥2 A peak), PCB layout (minimized loop inductance), and thermal management (≥6 cm² copper) are essential to maintain switching integrity and prevent thermal runaway at full load.

How does the PG-TO251-3-21 package compare thermally to PG-TO252 variants?

IPU09N03LA G (TO251) shares the same R_thJC = 2.4 K/W as TO252 versions, but its smaller footprint yields higher R_thJA: 50 K/W on 6 cm² copper versus 45 K/W for TO252. This means identical junction-to-case thermal path, but slightly reduced board-level heat dissipation due to less copper attachment area-requiring careful thermal pad design in compact layouts.

IPU09N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1642 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-21

IPU09N03LA G FAQ

1.How can I place an order for IPU09N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU09N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU09N03LA G reliable?

The price and inventory of IPU09N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU09N03LA G is usually 5 days.

3.What payment methods are accepted for IPU09N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU09N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU09N03LA G?

IPU09N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU09N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU09N03LA G?

For technical support, including IPU09N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU09N03LA G requirements.

6.How does Aetrix verify that IPU09N03LA G is sourced from the original manufacturer or authorized distributors?

All IPU09N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU09N03LA G meets industry standards.

7.What is the process for return or replacement of IPU09N03LA G?

All IPU09N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPU09N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU09N03LA G part is unused and in its original packaging.

Return procedure for IPU09N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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