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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU09N03LB G

Name: IPU09N03LB G
Brand: Infineon Technologies
SKU: IPU09N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU09N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU09N03LB G.pdf

Description:: MOSFET N-CH 30V 50A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPU09N03LB G from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TO251-3-21 package, rated for 30 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 9.1 mΩ max R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, low gate charge (Q_g = 10–13 nC), and optimized FOM for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPU09N03LB G datasheet, IPU09N03LB G pinout, IPU09N03LB G application, or IPU09N03LB G equivalent, key selection criteria include R_DS(on) at 4.5 V drive, thermal resistance (R_thJC = 2.6 K/W), reverse diode Q_rr (≤10 nC), safe operating area under pulse conditions, and JEDEC-qualified reliability for industrial power stages.

Technical Context

This MOSFET employs trench-based OptiMOS®2 technology to achieve low conduction loss and fast switching with controlled dv/dt (6 kV/µs) and robust avalanche capability (E_AS = 57 mJ). Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic drivers.

Dynamic parameters-including C_iss (1200–1600 pF), C_oss (440–590 pF), and Q_gd/Q_gs ratio-are optimized for synchronous rectification and zero-voltage switching topologies. The integrated body diode supports bidirectional current with V_SD ≤ 1.2 V at 48 A and low Q_rr for reduced switching loss in hard-commutated circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input bus systems and 12 V output rails.
R_DS(on) max	9.1 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 40 A, critical for high-current POL stages.
I_D cont.	50 A @ T_C = 25 °C - Supported by TO251 thermal design with 2.6 K/W junction-to-case resistance.
Q_g	10–13 nC - Low total gate charge reduces driver power and enables >1 MHz operation in resonant converters.
E_AS	57 mJ - Single-pulse avalanche energy rating confirms ruggedness in inductive load switching.
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without derating.
Q_rr	≤10 nC - Minimizes reverse recovery loss and EMI in synchronous buck and LLC secondaries.

Pinout & Package

IPU09N03LB G uses the PG-TO251-3-21 package: a surface-mount variant of the standard TO-251 (IPAK) with gull-wing leads, 3-terminal configuration, and exposed drain pad for thermal enhancement. The case outline conforms to Infineon's standardized leadframe design for automated PCB assembly and thermal interface to copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to ground plane or source return path in buck/boost stages.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <13 nC charge; routed away from noisy power traces to prevent false turn-on.
Pin 3 (Drain)	Power output / high-side switch node	Exposed metal pad on underside-must be soldered to ≥6 cm² copper area for R_thJA ≤ 50 K/W performance.

Key Features

Feature	Design Value
N-channel logic-level drive	V_GS(th) = 1.2–2.0 V enables direct interfacing with 3.3 V microcontrollers and PWM controllers without level-shifting.
Optimized FOM (Q_g × R_DS(on))	~117–119 nC·mΩ - balances switching speed and conduction loss for 500 kHz–2 MHz DC/DC designs.
JEDEC-qualified reliability	Qualified per J-STD-020 and JESD22 - validated for reflow, humidity, and temperature cycling in automotive-grade production.
Enhanced thermal performance	R_thJC = 2.6 K/W - allows full 50 A current handling with minimal heatsink requirement in compact layouts.

Applications

Server Point-of-Load Regulator

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-efficiency 12 V → 1 V conversion in CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 600–1000 kHz with precise dead-time control.

Use Value: 9.1 mΩ R_DS(on) and 10 nC Q_g reduce both conduction and gate drive losses, improving full-load efficiency by ≥0.8% versus prior-gen MOSFETs.

Use Scenario: Low-voltage (<30 V) BLDC motor phase leg in factory automation drives.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; commutates up to 48 A continuous with integrated diode freewheeling.

Use Value: 175 °C T_j,max and 57 mJ E_AS ensure fault tolerance during short-circuit events and rapid direction reversal.

Telecom DC/DC Module

Automotive Body Control Unit

Use Scenario: Isolated 48 V → 12 V intermediate bus converter in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC resonant converter.

Use Value: Low C_oss (440–590 pF) and Q_rr ≤10 nC minimize switching loss and ringing at 300–700 kHz, easing EMI filter design.

Use Scenario: Load switching for LED lighting, solenoids, and HVAC actuators in 12 V vehicle subsystems.

IC Role / Device Role / Timing Role: High-side or low-side load switch with integrated protection; driven by CAN/LIN microcontroller GPIO.

Use Value: Logic-level V_GS(th) and ±20 V V_GS rating support direct MCU control and transient immunity against load-dump spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD09N03LB G	PG-TO252-3-11 package; R_thJC = 2.6 K/W; same die, larger footprint	Better thermal dissipation in open-frame designs; requires more PCB area	Select when board layout permits larger SMD footprint and higher steady-state power is needed.
IPF09N03LB G	PG-TO252-3-23 package; identical R_DS(on) and Q_g; different leadform	Compatible with existing TO252 pick-and-place tooling but not mechanical drop-in	Choose for manufacturing continuity where TO252-3-23 is already qualified in production lines.

Compared with IPD09N03LB G and IPF09N03LB G, IPU09N03LB G offers identical silicon performance in a smaller TO251 footprint-ideal for space-constrained POL modules-while maintaining full thermal and reliability specs, making it optimal for high-density server and telecom power designs.

Availability

IPU09N03LB G is available at Aetrix Electronics and suitable for server point-of-load regulators, industrial motor drive half-bridges, and telecom DC/DC modules requiring stable component supply and long-term lifecycle assurance.

Supply support for IPU09N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS®2 Power-Transistor product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum gate-source voltage rating for IPU09N03LB G?

The absolute maximum gate-source voltage is ±20 V, with a recommended operating range of –5 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. For logic-level drive, V_GS = 4.5 V delivers 11.4–14.2 mΩ R_DS(on), while 10 V yields 7.4–9.1 mΩ for lowest conduction loss.

Does IPU09N03LB G have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode rated for 48 A continuous forward current and 350 A pulsed current. At T_j = 25 °C and I_F = 48 A, V_SD is 0.96–1.2 V, and reverse recovery charge Q_rr is ≤10 nC under 15 V reverse bias and 400 A/µs di/dt-critical for minimizing shoot-through loss in synchronous rectifiers.

How does the thermal resistance of IPU09N03LB G compare between junction-to-case and junction-to-ambient?

Junction-to-case thermal resistance is fixed at 2.6 K/W, independent of PCB layout. Junction-to-ambient depends on copper area: 75 K/W with minimal footprint, 50 K/W with 6 cm² drain copper on FR4. This means at 50 A and 9.1 mΩ, junction temperature rise over case is ~13.3 °C, but ambient rise can exceed 250 °C without adequate copper-making thermal pad design essential.

Is IPU09N03LB G suitable for automotive applications, and what qualifications does it hold?

It is JEDEC-qualified per J-STD-020 (reflow) and JESD22 (reliability), supporting industrial and telecom use. While not AEC-Q101 certified, its 175 °C T_j,max, Pb-free RoHS compliance, and robust avalanche rating make it viable for non-safety-critical automotive body electronics-provided system-level validation confirms ESD, EMC, and lifetime requirements.

IPU09N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-21

IPU09N03LB G FAQ

1.How can I place an order for IPU09N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU09N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU09N03LB G reliable?

The price and inventory of IPU09N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU09N03LB G is usually 5 days.

3.What payment methods are accepted for IPU09N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU09N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU09N03LB G?

IPU09N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU09N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU09N03LB G?

For technical support, including IPU09N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU09N03LB G requirements.

6.How does Aetrix verify that IPU09N03LB G is sourced from the original manufacturer or authorized distributors?

All IPU09N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU09N03LB G meets industry standards.

7.What is the process for return or replacement of IPU09N03LB G?

All IPU09N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPU09N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU09N03LB G part is unused and in its original packaging.

Return procedure for IPU09N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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