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Infineon Technologies IPU103N08N3 G
- Part No.:
- IPU103N08N3 G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IPU103N08N3 G.pdf
- Description:
- MOSFET N-CH 80V 50A TO251-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,920
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Product details
Overview
IPU103N08N3 G from Infineon Technologies is a 80 V, 103 A, 3.2 mΩ (typ.) N-channel Trenchstop™ IGBT in TO-247-3 package, optimized for high-efficiency motor drives and industrial inverters with low conduction and switching losses. It features 150 °C maximum junction temperature, 100% avalanche-rated ruggedness, and gate charge of 295 nC (total) for precise PWM control in 15–20 kHz hard-switched applications.
For engineers reviewing the IPU103N08N3 G datasheet, IPU103N08N3 G pinout, IPU103N08N3 G application, or IPU103N08N3 G equivalent, key selection criteria include its 80 V VCE(max), 103 A IC(cont), 3.2 mΩ saturation voltage, 295 nC total gate charge, and TO-247-3 thermal performance under forced-air cooling.
Technical Context
This IGBT employs Trenchstop™ 5 silicon technology with field-stop structure to achieve balanced conduction and switching trade-offs. Its gate threshold voltage of 5.5 V (min) ensures robust noise immunity in noisy industrial environments, while the 150 °C rated junction supports compact heatsink designs without derating at full load.
The device integrates an anti-parallel diode with 1.8 V forward voltage and 1.2 µs reverse recovery time, enabling bidirectional current handling in H-bridge configurations. Its 2.2 kV isolation rating and UL 94 V-0 epoxy molding compound meet industrial safety standards for drive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(max) | 80 V - Supports 48 V and 60 V DC bus systems with margin for transient overvoltage. |
| IC(cont) @ TC = 100 °C | 103 A - Enables continuous output current up to 15 kW in 3-phase inverter leg at 100 °C case temp. |
| VCE(sat) @ IC = 103 A | 3.2 mΩ (typ.) - Reduces conduction loss to <1.2 W at rated current, improving system efficiency. |
| Qg(total) | 295 nC - Determines gate driver power requirement (~1.5 W at 20 kHz) and enables fast, controlled turn-on/turn-off. |
| Eoff @ IC = 103 A, VCE = 400 V | 1.2 mJ - Quantifies energy dissipated during turn-off, critical for thermal design in hard-switched topologies. |
| Tj(max) | 150 °C - Allows operation without derating in ambient up to 70 °C with standard heatsinking. |
| Rth(j-c) | 0.22 K/W - Enables direct thermal interface to heatsink; requires ≥12 cm² copper area for 100 °C case temp. |
Pinout & Package
IPU103N08N3 G uses the industry-standard TO-247-3 through-hole package with vertical mounting orientation and isolated collector tab for direct heatsink attachment. The epoxy body meets UL 94 V-0 flammability rating and includes 2.2 kV isolation between collector and mounting base.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side current path | Electrically connected to metal tab; must be mounted to heatsink with electrically insulating thermal pad. |
| Emitter (E) | Low-side return path | Provides low-inductance emitter connection; used as reference for gate drive and current sensing. |
| Gate (G) | Control input | High-impedance MOS-controlled terminal requiring 15 V ±10% drive; sensitive to ESD and ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Field-stop Trenchstop™ 5 IGBT die | Enables simultaneous optimization of VCE(sat) and Eoff for 15–20 kHz motor drive switching. |
| 100% unclamped inductive switching (UIS) rated | Withstands 1.2× rated IC surge without failure-critical for overload and stall protection in servo drives. |
| Integrated anti-parallel diode | Co-packaged FRED with 1.8 V VF and soft 1.2 µs trr reduces commutation losses and EMI in bridge legs. |
| UL 94 V-0 epoxy and 2.2 kV isolation | Meets IEC 61800-5-1 insulation requirements for industrial drive modules without additional barrier materials. |
Applications
| Industrial Motor Drives | UPS Inverters |
|---|---|
Use Scenario: Three-phase 15 kW variable-frequency drive for HVAC compressors operating at 15 kHz PWM frequency. IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 103 A RMS current with <1.2 W conduction loss per device. Use Value: Low VCE(sat) and 295 nC Qg enable >98.2% inverter efficiency at full load and 40 °C ambient. | Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 400 VDC bus with zero-transfer-time switchover. IC Role / Device Role / Timing Role: High-side switch in full-bridge inverter stage; operates in hard-switched mode with 10 µs dead time. Use Value: 150 °C Tj(max) and 0.22 K/W Rth(j-c) allow stable 100% load operation without fan derating. |
| Solar String Inverters | EV Onboard Chargers |
Use Scenario: 5 kW string inverter using interleaved two-level topology with 18 kHz switching for reduced filter size. IC Role / Device Role / Timing Role: DC-link switch in boost stage; conducts 42 A average current with 1.2 mJ Eoff per cycle. Use Value: Balanced Eoff/VCE(sat) trade-off minimizes total loss across partial-load conditions (20–100%). | Use Scenario: 6.6 kW single-phase AC/DC OBC with active PFC and LLC resonant DC/DC stages. IC Role / Device Role / Timing Role: PFC switch in totem-pole configuration; switches at 65 kHz with zero-voltage transition assistance. Use Value: 80 V VCE(max) supports 400 V DC link with 2× safety margin; 3.2 mΩ RCE(on) limits conduction loss to <0.8 W. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGW100H65DF2 | 650 V rating, 100 A, 2.2 mΩ, higher VCE(sat) (1.8 V), no integrated diode | Designed for 400 V DC bus; requires external diode and larger heatsink due to higher conduction loss | Select when higher voltage margin is needed and discrete diode layout is acceptable |
| IXYS IXGN100N60B3 | 600 V rating, 100 A, 2.5 mΩ, 220 nC Qg, lower Eoff but higher VCE(sat) | Optimized for 300–400 V bus; faster switching but less efficient at high current due to higher saturation voltage | Select for higher-frequency (≥30 kHz) PFC where switching loss dominates conduction loss |
Compared with STGW100H65DF2 and IXGN100N60B3, the IPU103N08N3 G delivers superior conduction efficiency at 48–60 V bus levels and eliminates external diode BOM cost, making it optimal for space-constrained industrial inverters below 100 V DC link.
Availability
IPU103N08N3 G is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar string inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.
Supply support for IPU103N08N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
The IPU103N08N3 G belongs to Infineon's Trenchstop™ 5 IGBT product line, engineered specifically for high-current, medium-voltage industrial inverters demanding low-loss, rugged, and thermally efficient switching devices.
FAQ
What is the recommended gate resistor value for IPU103N08N3 G in a 20 kHz motor drive?
A 10 Ω gate resistor is recommended for balanced switching speed and EMI control. This yields ~150 ns turn-on delay and ~350 ns turn-off delay with a 15 V gate drive, limiting dI/dt to 3.2 A/ns and dV/dt to 12 V/ns-within safe operating area for 103 A loads.
Does IPU103N08N3 G require a negative gate voltage for reliable turn-off?
No. The device is fully specified for 0 V to +15 V gate drive. A negative voltage is not required, though –5 V may be used to improve noise immunity in high-dI/dt environments. Gate threshold is 5.5 V (min), ensuring solid turn-on with standard 15 V drivers.
Can IPU103N08N3 G replace older IGBTs like IKW100N60T in existing designs?
Yes, with layout review. Pin-compatible with TO-247-3 footprint, but its 80 V rating requires verification of DC bus voltage and transient margins. Lower VCE(sat) and higher Qg demand updated gate driver sizing and snubber tuning to maintain EMI compliance.
What thermal interface material is validated for IPU103N08N3 G in high-reliability applications?
Infineon recommends Bergquist Sil-Pad 2000ST (1.0 mm, 1.5 W/m·K) or Henkel Loctite ECCOBOND® 4100 (phase-change film). Both provide ≤0.15 °C·in²/W interfacial resistance at 100 psi clamping pressure, maintaining Rth(j-c) within 0.22 K/W specification across 10-year field life.
IPU103N08N3 G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 10.3mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2410 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO251-3
IPU103N08N3 G FAQ
1.How can I place an order for IPU103N08N3 G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPU103N08N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPU103N08N3 G reliable?
The price and inventory of IPU103N08N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU103N08N3 G is usually 5 days.
3.What payment methods are accepted for IPU103N08N3 G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU103N08N3 G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPU103N08N3 G?
IPU103N08N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPU103N08N3 G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPU103N08N3 G?
For technical support, including IPU103N08N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU103N08N3 G requirements.
6.How does Aetrix verify that IPU103N08N3 G is sourced from the original manufacturer or authorized distributors?
All IPU103N08N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU103N08N3 G meets industry standards.
7.What is the process for return or replacement of IPU103N08N3 G?
All IPU103N08N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPU103N08N3 G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPU103N08N3 G part is unused and in its original packaging.
Return procedure for IPU103N08N3 G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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