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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU105N03L G

Name: IPU105N03L G
Brand: Infineon Technologies
SKU: IPU105N03L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU105N03L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU105N03L G.pdf

Description:: MOSFET N-CH 30V 35A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPU105N03L G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO251-3-21 package, rated for 30 V V_DS, 10.5 mΩ R_DS(on) at V_GS = 10 V and I_D = 30 A, avalanche-rated, and optimized for high-efficiency DC/DC converters and synchronous rectification in SMPS.

For engineers reviewing the IPU105N03L G datasheet, IPU105N03L G pinout, IPU105N03L G application, or IPU105N03L G equivalent, key selection criteria include gate charge (Q_g = 6.6–8.8 nC), low R_DS(on) × Q_g figure-of-merit, thermal resistance (R_thJC = 3.9 K/W), and logic-level drive compatibility down to 4.5 V.

Technical Context

This MOSFET employs Infineon's OptiMOS®3 silicon technology, delivering enhanced switching speed via reduced gate charge and output capacitance (C_iss = 1100–1500 pF, C_oss = 460–610 pF). Its logic-level gate threshold (V_GS(th) = 1–2.2 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The device supports high pulsed current (I_D,pulse = 245 A) and robust unclamped inductive switching (E_AS = 30 mJ, I_AS = 35 A), with guaranteed avalanche ruggedness per JEDEC JESD22-A109. Thermal design is enabled by low junction-to-case resistance and TO251 surface-mount footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V/24 V input DC/DC stages
R_DS(on) max	10.5 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 30 A continuous operation
Q_g	6.6–8.8 nC - Low total gate charge reduces driver power and switching transition time
I_D cont	35 A at T_C = 25 °C - Supports high-current synchronous FETs in multiphase buck converters
R_thJC	3.9 K/W - Enables efficient heat transfer to PCB copper when mounted on 6 cm² cooling area
E_AS	30 mJ - Sustains energy during inductive turn-off transients without failure in non-clamped topologies
V_GS(th)	1–2.2 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers

Pinout & Package

IPU105N03L G uses the PG-TO251-3-21 package: a surface-mount variant of the TO-251 (IPAK) with gull-wing leads, single drain tab (pin 2), and isolated source/gate pins. The package supports high thermal performance on FR4 PCBs with minimal footprint.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives logic-level voltage to modulate channel conductivity; low input capacitance (C_iss ≈ 1.3 nF) minimizes driver loading
Pin 2 (Drain)	High-side or low-side power path	Exposed metal tab - primary thermal path to PCB; electrically connected to drain for low-inductance layout
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides return path for load current; used as reference for gate driver IC feedback in synchronous buck configurations

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver boost stages in 3.3 V/5 V control systems
Avalanche-rated	Guaranteed single-pulse E_AS = 30 mJ - enables robust operation in hard-switched flyback and LLC resonant converters
Low R_DS(on) × Q_g FOM	≈110 mΩ·nC - balances conduction and switching losses for optimal efficiency in 300–1000 kHz DC/DC designs
Pb-free & RoHS compliant	Meets EU Directive 2011/65/EU - suitable for industrial, telecom, and consumer applications requiring environmental compliance

Applications

Server VRM Power Stage

Industrial DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, switching at 500–800 kHz with precise dead-time control.

Use Value: 10.5 mΩ R_DS(on) and 8.8 nC Q_g reduce both conduction loss and gate drive loss, improving full-load efficiency by ~0.8% over prior-gen MOSFETs.

Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC/DC module for PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Primary switch in active clamp forward or synchronous buck topology, operating up to 300 kHz.

Use Value: Avalanche rating ensures reliability during bus transients; 3.9 K/W R_thJC allows stable 35 A operation with passive heatsinking on 6 cm² PCB copper.

USB-C PD Fast Charger

Automotive Body Control Module

Use Scenario: Secondary-side synchronous rectifier in 65 W–100 W GaN-based USB-C PD adapters.

IC Role / Device Role / Timing Role: Low-side sync-FET driven by dedicated controller (e.g., MP6908), switching at 150–300 kHz.

Use Value: Q_g(sync) = 5.7–7.6 nC at 4.5 V enables fast turn-on with minimal overlap loss; V_GS(th) ≤ 2.2 V ensures clean zero-voltage switching detection.

Use Scenario: Load switch for 12 V battery-fed actuators (e.g., window lift, seat adjust) in BCM submodules.

IC Role / Device Role / Timing Role: High-side or low-side protected switch with integrated reverse polarity and short-circuit protection.

Use Value: 30 V rating accommodates automotive load-dump transients (ISO 7637-2 Pulse 5a); R_DS(on) stability over −40 °C to 175 °C ensures consistent performance across ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD105N03L G	PG-TO252-3-11 package; identical R_DS(on), Q_g, and avalanche rating; slightly higher R_thJA due to larger pad area requirement	Better suited for high-power density layouts where thermal vias under drain are impractical	Select when board space permits DPAK footprint and thermal management relies more on convection than PCB copper
IPS105N03L G	PG-TO251-3-11 package; same die, identical electrical specs; differs only in leadframe plating and marking location	No functional difference; qualified for same JEDEC target applications	Choose for legacy BOM continuity where TO251-3-11 footprint is already validated

Compared with IPD105N03L G and IPS105N03L G, IPU105N03L G offers identical silicon performance in a PG-TO251-3-21 package optimized for automated optical inspection and tighter pitch routing - making it preferable for high-volume, fine-pitch industrial PCB assembly.

Availability

IPU105N03L G is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC/DC converters, and USB-C PD fast chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPU105N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®3 product line delivers high-performance, logic-level N-channel MOSFETs engineered specifically for high-frequency, high-efficiency DC/DC conversion in computing, telecom, and industrial power supplies.

FAQ

Is IPU105N03L G suitable for synchronous rectification in flyback converters?

Yes. With its 10.5 mΩ R_DS(on), low Q_g (6.6–8.8 nC), and logic-level V_GS(th) (1–2.2 V), IPU105N03L G enables efficient synchronous rectification in secondary-side flyback designs operating up to 150 kHz. Its avalanche rating also handles leakage inductance spikes without external clamping.

What is the maximum PCB copper area required for full 35 A continuous current?

For 35 A continuous current at T_C = 25 °C, Infineon specifies a minimum 6 cm² copper area (single layer, 70 µm thick) on FR4 PCB, vertically oriented in still air. This achieves the rated P_tot = 38 W and maintains junction temperature below 175 °C under worst-case conditions.

Does IPU105N03L G support 3.3 V gate drive in practice?

Yes. With V_GS(th) max = 2.2 V and R_DS(on) = 15.5 mΩ at V_GS = 4.5 V / I_D = 25 A, the device conducts strongly at 3.3 V in most real-world conditions. However, for guaranteed 35 A conduction, V_GS ≥ 4.5 V is recommended per datasheet limits.

How does the PG-TO251-3-21 package differ electrically from PG-TO252-3-11?

Electrically, IPU105N03L G (TO251-3-21) and IPD105N03L G (TO252-3-11) share identical die and all electrical parameters. The package difference affects only thermal resistance to ambient (R_thJA) and mechanical mounting: TO251 has smaller footprint and gull-wing leads, while TO252 offers larger drain pad area for enhanced PCB heat spreading.

IPU105N03L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-21

IPU105N03L G FAQ

1.How can I place an order for IPU105N03L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU105N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU105N03L G reliable?

The price and inventory of IPU105N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU105N03L G is usually 5 days.

3.What payment methods are accepted for IPU105N03L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU105N03L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU105N03L G?

IPU105N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU105N03L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU105N03L G?

For technical support, including IPU105N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU105N03L G requirements.

6.How does Aetrix verify that IPU105N03L G is sourced from the original manufacturer or authorized distributors?

All IPU105N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU105N03L G meets industry standards.

7.What is the process for return or replacement of IPU105N03L G?

All IPU105N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPU105N03L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU105N03L G part is unused and in its original packaging.

Return procedure for IPU105N03L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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