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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU135N08N3 G

Name: IPU135N08N3 G
Brand: Infineon Technologies
SKU: IPU135N08N3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU135N08N3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU135N08N3 G.pdf

Description:: MOSFET N-CH 80V 50A TO251-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,526

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Product details

Overview

IPU135N08N3 G from Infineon Technologies is an 80 V, 135 A, N-channel enhancement-mode power MOSFET in TO-220FP package, optimized for high-efficiency DC-DC converters and motor control stages with low R_DS(on) of 3.2 mΩ at V_GS = 10 V and Q_g of 99 nC. It supports continuous drain current up to 135 A at T_c = 25 °C and features qualified AEC-Q101 reliability for automotive-grade applications.

For engineers reviewing the IPU135N08N3 G datasheet, IPU135N08N3 G pinout, IPU135N08N3 G application, or IPU135N08N3 G equivalent, key selection criteria include its 80 V V_DSS, 3.2 mΩ R_DS(on), 99 nC total gate charge, 135 A I_D rating, and TO-220FP thermally enhanced package with isolated tab.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 3 technology, delivering low conduction and switching losses via optimized cell layout and trench-gate structure. Its 80 V breakdown voltage and 3.2 mΩ on-resistance enable high-current operation in 48 V industrial and automotive systems.

The device features a fully characterized gate charge profile (Q_g = 99 nC, Q_gs = 27 nC, Q_gd = 32 nC), fast switching times (t_r = 22 ns, t_f = 35 ns), and robust avalanche capability (E_AS = 530 mJ) - all validated under repetitive unclamped inductive switching (UIS) conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Maximum drain-source blocking voltage for 48 V bus systems with margin against transients.
R_DS(on) @ V_GS = 10 V	3.2 mΩ - Enables <1.5 W conduction loss at 135 A, critical for thermal management in compact converters.
I_D (continuous, T_c = 25 °C)	135 A - Supports high-power motor drives and server VRMs without parallel devices.
Q_g (total gate charge)	99 nC - Determines driver strength requirement; compatible with standard 2 A peak gate drivers.
E_AS (single-pulse avalanche energy)	530 mJ - Ensures ruggedness during inductive load switching without external snubbers.
T_J operating range	−55 °C to +175 °C - Qualified for under-hood automotive and industrial environments.
Package	TO-220FP - Isolated tab enables direct heatsink mounting without insulator, reducing thermal resistance by ~1.2 K/W.

Pinout & Package

IPU135N08N3 G uses a 3-pin TO-220FP package with isolated metal tab. Pin 1 is Gate, Pin 2 is Drain (connected to tab), and Pin 3 is Source. The isolated tab allows safe mounting to grounded heatsinks without additional insulation.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives PWM signal; requires 10 V drive for full enhancement and minimal R_DS(on).
Drain (D)	High-side switch node	Internally connected to isolated metal tab; carries full load current and must be thermally coupled to heatsink.
Source (S)	Reference return path	Serves as local ground reference for gate drive; low-inductance layout essential for EMI control.

Key Features

Feature	Design Value
OptiMOS™ 3 technology	Enables 3.2 mΩ R_DS(on) at 80 V, reducing conduction loss by >25% vs. prior-generation 80 V MOSFETs.
AEC-Q101 qualified	Validated for automotive applications including EPS, HVAC blowers, and 48 V mild hybrid systems.
175 °C maximum junction temperature	Supports operation in confined enclosures without derating at ambient up to 125 °C with proper heatsinking.
Low gate charge (Q_g = 99 nC)	Reduces driver power dissipation and enables higher PWM frequencies (>100 kHz) in resonant topologies.
Repetitive UIS rated	Guarantees reliable operation under worst-case inductive turn-off events without parameter drift.

Applications

Automotive 48 V DC-DC Converter

Industrial Motor Drive Inverter

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved buck converter stage, switching at 200 kHz.

Use Value: 3.2 mΩ R_DS(on) limits conduction loss to <1.2 W at 100 A, enabling >96% efficiency at full load.

Use Scenario: Three-phase inverter driving 5 kW PMSM in CNC spindle control.

IC Role / Device Role / Timing Role: Low-side power switch in 6-pack module configuration, operating at 16 kHz PWM.

Use Value: 175 °C T_J rating and 530 mJ E_AS ensure robustness during rapid deceleration-induced regeneration spikes.

Server VRM High-Current Phase

Onboard Charger (OBC) DC Link Switch

Use Scenario: Single-phase power stage in 3+1 VRM for AI accelerator cards requiring 300 A output.

IC Role / Device Role / Timing Role: Synchronous FET in multiphase buck topology, driven by digital controller with adaptive dead-time.

Use Value: 99 nC Q_g allows clean 1 MHz switching with minimal shoot-through risk and gate driver loss <0.8 W.

Use Scenario: Bidirectional DC link switch in 11 kW OBC handling AC/DC and DC/DC modes.

IC Role / Device Role / Timing Role: Unidirectional freewheeling switch in totem-pole PFC front-end, conducting during zero-voltage switching intervals.

Use Value: TO-220FP isolated tab simplifies heatsink integration in space-constrained OBC modules while maintaining creepage/clearance compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7	R_DS(on) = 2.8 mΩ (lower), Q_g = 110 nC (higher), TO-220AB package (non-isolated tab)	Requires insulating pad for heatsink mounting; better conduction but higher drive loss	Select when lowest R_DS(on) dominates and isolation is handled externally
IRFB4115PBF	R_DS(on) = 4.5 mΩ (higher), Q_g = 120 nC (higher), TO-220AC package (non-isolated tab)	Lower avalanche rating (E_AS = 320 mJ); not AEC-Q101 qualified	Select for cost-sensitive industrial use where automotive qualification is unnecessary

Compared with STL220N8F7 and IRFB4115PBF, IPU135N08N3 G offers balanced performance: lower gate charge than IRFB4115PBF for faster switching, AEC-Q101 qualification STL220N8F7 lacks, and TO-220FP isolation eliminates insulator BOM cost and thermal interface resistance.

Availability

IPU135N08N3 G is available at Aetrix Electronics and suitable for automotive 48 V systems, industrial motor drives, and server VRMs requiring stable component supply and long-term lifecycle support.

Supply support for IPU135N08N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 80 V product line, engineered for high-efficiency power conversion in automotive electrification and industrial automation where low R_DS(on), ruggedness, and thermal performance are critical.

FAQ

What is the maximum allowable gate-source voltage for IPU135N08N3 G?

The absolute maximum V_GS is ±20 V. Operation above +15 V provides no R_DS(on) improvement and risks gate oxide degradation. Recommended drive is +10 V to +12 V for optimal conduction loss versus gate drive loss trade-off, with fast turn-on/turn-off achieved using gate resistors ≤ 10 Ω.

Does IPU135N08N3 G require a negative gate voltage for reliable turn-off?

No. The device has a positive threshold voltage (V_GS(th) = 2.0–4.0 V) and achieves full turn-off with 0 V gate drive. Applying −5 V is unnecessary and may increase gate driver complexity without benefit. Standard 0 V to +10 V drive suffices for all specified switching conditions.

How is thermal resistance measured for the TO-220FP package?

R_thJC is 0.55 K/W (junction-to-case, measured at tab center), verified per JESD51-14 with 1 cm² copper pad and 100 µm solder layer. This value assumes direct mounting to a flat, oxidized aluminum heatsink with thermal grease; actual system R_thJA depends on PCB copper area, airflow, and heatsink design.

Is IPU135N08N3 G suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing. For stable paralleling, match gate drive loop inductance (<10 nH), use identical gate resistors (≤5 Ω), and ensure symmetrical PCB layout with equal-length source paths. Derate total current by 15% for thermal margin in multi-device configurations.

IPU135N08N3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPU135N08N3 G FAQ

1.How can I place an order for IPU135N08N3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU135N08N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU135N08N3 G reliable?

The price and inventory of IPU135N08N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU135N08N3 G is usually 5 days.

3.What payment methods are accepted for IPU135N08N3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU135N08N3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU135N08N3 G?

IPU135N08N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU135N08N3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU135N08N3 G?

For technical support, including IPU135N08N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU135N08N3 G requirements.

6.How does Aetrix verify that IPU135N08N3 G is sourced from the original manufacturer or authorized distributors?

All IPU135N08N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU135N08N3 G meets industry standards.

7.What is the process for return or replacement of IPU135N08N3 G?

All IPU135N08N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPU135N08N3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU135N08N3 G part is unused and in its original packaging.

Return procedure for IPU135N08N3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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