My Inquiry
My Account
Infineon Technologies IPU13N03LA G
- Part No.:
- IPU13N03LA G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IPU13N03LA G.pdf
- Description:
- MOSFET N-CH 25V 30A TO251-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,899
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPU13N03LA G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO251-3-1 package, rated for 25 V VDS, 30 A continuous drain current at TC = 100 °C, and 12.8 mΩ RDS(on) at VGS = 10 V. It delivers high-frequency switching performance in synchronous buck converters and motor drive half-bridges with 175 °C maximum junction temperature and JEDEC-qualified reliability.
For engineers reviewing the IPU13N03LA G datasheet, IPU13N03LA G pinout, IPU13N03LA G application, or IPU13N03LA G equivalent, this device is selected for its low gate charge × RDS(on) figure of merit (FOM), superior thermal resistance (RthJC = 3.2 K/W), and robust 6 kV/µs dv/dt immunity in hard-switching topologies.
Technical Context
This MOSFET employs a trench-based OptiMOS®2 process optimized for logic-level gate drive compatibility and fast switching in DC/DC converter primary-side and synchronous rectifier roles. Its 1.6 V typical gate threshold voltage enables direct interfacing with 3.3 V and 5 V controllers without level-shifting.
Dynamic parameters-including 6.3–8.3 nC total gate charge, 41–62 pF Crss, and 2.6–3.9 ns fall time-are characterized under standardized 15 V VDD, 15 A ID, and 2.7 Ω gate resistor conditions, supporting precise loss modeling in high-efficiency power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for 12 V input rail applications with margin against transients |
| RDS(on) max | 12.8 mΩ at VGS = 10 V, ID = 30 A - Enables ≤3.9 W conduction loss at full load in 30 A switch node |
| Qg | 6.3–8.3 nC - Determines gate driver current requirement and switching transition time in 500 kHz+ converters |
| EAS | 60 mJ (ID = 24 A, RGS = 25 Ω) - Supports unclamped inductive switching in motor control without external snubbers |
| RthJC | 3.2 K/W - Allows 47 A chip-limited current handling when mounted on thermally optimized PCB with 6 cm² copper area |
| dv/dt immunity | 6 kV/µs at Tj,max = 175 °C - Prevents false turn-on during high-slew-rate commutation in half-bridge configurations |
| VGS(th) | 1.2–2.0 V - Ensures reliable enhancement-mode operation with standard logic-level drivers and noise margin at elevated temperature |
Pinout & Package
IPU13N03LA G uses the PG-TO251-3-1 package: surface-mount variant of TO-251 with isolated leadframe, 3-terminal configuration, and drain-connected tab for direct PCB thermal coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Reference node for gate drive; connects to low-side return path and defines common-mode voltage for driver IC |
| Pin 2 (Gate) | Control terminal | High-impedance input requiring <8.3 nC charge for full enhancement; sensitive to ESD and layout-induced ringing |
| Pin 3 (Drain) | Power output terminal | Exposed metal tab tied internally to drain; must be soldered to ≥6 cm² copper pour for thermal management per RthJC spec |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V-compatible with microcontroller GPIO and low-voltage PWM controllers |
| Optimized FOM (Qg × RDS(on)) | ~105 nC·mΩ - balances switching loss and conduction loss for 300–1000 kHz DC/DC designs |
| 175 °C rated junction temperature | Enables operation in sealed enclosures or high-ambient environments without derating below 30 A |
| JEDEC-qualified reliability | Complies with J-STD-020 (reflow) and JESD22-A108 (temperature cycling) for automotive and industrial production |
| RoHS-compliant Pb-free plating | Meets EU Directive 2011/65/EU with matte tin lead finish-no post-assembly reflow concerns |
Applications
| Server VRM Power Stage | Industrial BLDC Motor Inverter |
|---|---|
|
Use Scenario: Primary-side switch in 48 V input, 12 V output multiphase buck converter for CPU/GPU core power. IC Role / Device Role / Timing Role: High-side synchronous MOSFET switching at 600 kHz with 30 A peak phase current. Use Value: 12.8 mΩ RDS(on) and 6.3 nC Qg minimize combined conduction + switching losses, enabling >95% efficiency at full load. |
Use Scenario: Low-side switch in 24 V three-phase inverter driving 500 W brushless DC fan motor. IC Role / Device Role / Timing Role: Fast-turning freewheeling element in 20 kHz PWM-controlled leg with reverse diode conduction. Use Value: 0.95 V typ. VSD and 10 nC Qrr reduce body-diode conduction loss and commutation spikes during dead-time transitions. |
| Telecom DC/DC Module | Automotive Body Control Unit |
|
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V to 5 V flyback converter for base station auxiliary rails. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by self-driven gate signal referenced to secondary winding. Use Value: 1.6 V VGS(th) ensures reliable turn-on even with reduced gate drive amplitude under light-load transformer leakage. |
Use Scenario: Load switch for 12 V battery-fed interior lighting and window lift actuation circuits. IC Role / Device Role / Timing Role: Protected high-side power switch with integrated overtemperature and short-circuit response. Use Value: 175 °C Tj,max and 60 mJ EAS withstand inductive kickback from solenoid loads without external clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD13N03LA G | PG-TO252-3-11 package; 3.2 K/W RthJC; identical die but higher thermal mass due to larger leadframe | Better suited for high-power density layouts where PCB space allows DPAK footprint | Select when board-level thermal design prioritizes case-to-PCB heat transfer over component height |
| IPF13N03LA G | PG-TO252-3-23 package; same RDS(on) and Qg, but different leadform geometry for automated placement | Preferred for high-volume SMT lines using vision-guided pick-and-place with tighter coplanarity tolerance | Choose for production scalability where DPAK variant offers better placement yield than TO-251 |
Compared with IPD13N03LA G and IPF13N03LA G, IPU13N03LA G provides identical electrical performance in a lower-profile TO-251 package-ideal for height-constrained modules where 1.7 mm max component height is critical, while maintaining full thermal capability via optimized pad layout.
Availability
IPU13N03LA G is available at Aetrix Electronics and suitable for server VRM power stages, industrial BLDC motor inverters, and telecom DC/DC modules requiring stable component supply across multi-year production cycles.
Supply support for IPU13N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to the OptiMOS®2 family-designed specifically for high-efficiency, high-frequency power conversion in computing, telecom, and industrial motor drives where logic-level gate drive and low FOM are essential.
FAQ
What is the maximum continuous drain current rating for IPU13N03LA G at 100 °C case temperature?
The maximum continuous drain current is 30 A at TC = 100 °C, limited by bondwire capacity-not silicon thermal limits-as confirmed in the Absolute Maximum Ratings table. At TC = 25 °C, the same limit applies due to internal packaging constraints, not junction temperature.
Does IPU13N03LA G include an integrated body diode, and what are its key conduction characteristics?
Yes, it features a monolithic parasitic body diode with 30 A continuous forward current rating and 0.95–1.2 V forward voltage at 30 A and 25 °C. Reverse recovery charge is 10 nC under 15 V reverse bias and 400 A/µs di/dt, enabling use in synchronous rectification without external Schottky replacement.
Can IPU13N03LA G be driven directly by a 3.3 V microcontroller GPIO without a gate driver?
It can be partially enhanced at 3.3 V (VGS(th) max = 2.0 V), but RDS(on) rises significantly above 12.8 mΩ. Full enhancement requires ≥4.5 V; therefore, a level-shifting buffer or dedicated gate driver is recommended for low-loss operation at rated current.
What is the thermal resistance from junction to case (RthJC) and how should it be applied in thermal design?
RthJC is 3.2 K/W, measured with the device mounted on a vertical FR4 PCB with 6 cm² copper area for drain connection. This value assumes minimal thermal interface resistance; actual board-level RthJA depends on copper area, layer count, and airflow-designers must verify junction temperature using Tj = TC + Ptot × RthJC.
IPU13N03LA G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1043 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 46W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- P-TO251-3-1
IPU13N03LA G FAQ
1.How can I place an order for IPU13N03LA G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPU13N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPU13N03LA G reliable?
The price and inventory of IPU13N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU13N03LA G is usually 5 days.
3.What payment methods are accepted for IPU13N03LA G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU13N03LA G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPU13N03LA G?
IPU13N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPU13N03LA G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPU13N03LA G?
For technical support, including IPU13N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU13N03LA G requirements.
6.How does Aetrix verify that IPU13N03LA G is sourced from the original manufacturer or authorized distributors?
All IPU13N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU13N03LA G meets industry standards.
7.What is the process for return or replacement of IPU13N03LA G?
All IPU13N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPU13N03LA G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPU13N03LA G part is unused and in its original packaging.
Return procedure for IPU13N03LA G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPU13N03LA G Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
