Infineon Technologies IPU50R2K0CEAKMA1

Overview

IPU50R2K0CEAKMA1 from Infineon Technologies is a 500 V, 2.0 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO251 (IPAK) package, optimized for high-efficiency, cost-sensitive hard-switching and resonant SMPS stages. It delivers 3.6 A continuous drain current at T_C = 25°C, 6 nC total gate charge, and 0.62 µJ output switching energy at 400 V - enabling high-frequency PFC and adapter designs in LCD TV, indoor lighting, and PC silverbox applications.

For engineers reviewing the IPU50R2K0CEAKMA1 datasheet, IPU50R2K0CEAKMA1 pinout, IPU50R2K0CEAKMA1 application, or IPU50R2K0CEAKMA1 equivalent, key selection criteria include its 500 V V_(BR)DSS, low 2.0 Ω R_DS(on) at 13 V_GS, robust 50 V/ns dv/dt ruggedness, 34 mJ single-pulse avalanche energy, and IPAK thermal resistance of 3.75 °C/W - all critical for reliable operation in consumer-grade offline converters.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure to achieve superior figure-of-merit (R_DS(on) × Q_g = 12 Ω·nC typ) while maintaining high commutation ruggedness and ease of gate drive. Its 5.4 V gate plateau voltage and 3.5 nC Q_gd support stable hard-switching behavior under 400 V DC-link conditions.

The integrated body diode exhibits 110 ns reverse recovery time and 0.35 µC Q_rr at 400 V, enabling efficient operation in quasi-resonant and LLC topologies. Thermal design is supported by a junction-to-case resistance of 3.75 °C/W and rated 33 W power dissipation at T_C = 25°C.

Key Specifications

Pinout & Package

IPU50R2K0CEAKMA1 uses the PG-TO251 (IPAK) surface-mount package with exposed drain pad for thermal performance. The package measures 6.5 mm × 3.5 mm × 1.6 mm and features gull-wing leads compatible with standard reflow processes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IPD50R2K0CE, IPU50R2K0CEAKMA1 offers 12% lower thermal resistance and 18% higher power dissipation, making it preferable for thermally demanding adapter and lighting applications; versus IPP60R2K0C6, it trades 100 V headroom for lower Q_g and better light-load efficiency in 500 V-class consumer systems.

Availability

IPU50R2K0CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC boost circuits, LCD TV backlight inverters, and universal input adapters requiring stable component supply across production ramp and long-term maintenance cycles.

Supply support for IPU50R2K0CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CE product line - engineered specifically for cost-sensitive, high-efficiency consumer and lighting power supplies operating at 500 V class with emphasis on ease of use and production scalability.

FAQ

What is the maximum recommended gate resistor value for stable switching?

A 5.3 Ω gate resistor is specified in the datasheet test conditions for turn-on/turn-off timing measurements. For stable operation with minimal ringing, use 4.7–10 Ω in series with the gate driver output. Values above 15 Ω increase switching losses and risk incomplete turn-on due to Miller capacitance coupling, especially at >100 kHz.

Can IPU50R2K0CEAKMA1 be paralleled with identical units?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each gate line or individual totem-pole drivers to suppress oscillation. Layout symmetry, matched trace lengths, and Kelvin source connections are mandatory. Parallel operation increases current capability but does not linearly scale avalanche energy or thermal resistance.

Is this device suitable for zero-voltage switching (ZVS) topologies?

Yes - its 0.35 µC Q_rr, 110 ns t_rr, and 500 V V_(BR)DSS make it well-suited for LLC and phase-shifted full-bridge ZVS designs operating up to 300 kHz. The low E_oss reduces turn-off loss during hard-commutation events that occur during startup or light-load transitions.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 2.3 A per datasheet Table 2. The SOA curve (Diagram 3) shows pulsed operation up to 4.5 A for 100 µs at V_DS = 200 V, but DC operation must remain within the 2.3 A limit to avoid thermal runaway due to R_DS(on) positive temperature coefficient.