Infineon Technologies IPU50R3K0CEAKMA1

Overview

IPU50R3K0CEAKMA1 from Infineon Technologies is a 500 V, 3.0 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO251 (IPAK) package, rated for 2.6 A continuous drain current at T_C = 25°C and optimized for high-efficiency PFC and hard-switching SMPS in consumer lighting and adapter applications.

For engineers reviewing the IPU50R3K0CEAKMA1 datasheet, IPU50R3K0CEAKMA1 pinout, IPU50R3K0CEAKMA1 application, or IPU50R3K0CEAKMA1 equivalent, key selection criteria include its 4.3 nC total gate charge, 0.49 µJ output energy at 400 V, 50 V/ns dv/dt ruggedness, and 4.85 °C/W junction-to-case thermal resistance - all critical for EMI-limited, thermally constrained, cost-sensitive offline converters.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) of ~12.9 Ω·nC and ultra-low E_oss (0.49 µJ @ 400 V), directly reducing switching losses in continuous conduction mode (CCM) PFC and fixed-frequency PWM stages. Its 5.3 V gate plateau voltage and 6 Ω intrinsic gate resistance simplify gate drive design without external damping.

The MOSFET features robust unclamped inductive switching (UIS) capability (18 mJ single-pulse E_AS) and high commutation ruggedness (500 A/µs di/dt rating), validated under V_DClink = 400 V with matched high-/low-side switching. Its 0.83 V body diode forward voltage and 99 ns reverse recovery time support moderate-frequency synchronous rectification in auxiliary rails.

Key Specifications

Pinout & Package

IPU50R3K0CEAKMA1 uses the PG-TO251 (IPAK) surface-mount package with gull-wing leads, optimized for automated assembly and thermal performance on standard PCBs. The package exposes the drain pad on the underside for direct thermal connection to internal copper planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPD50R3K0CE, IPU50R3K0CEAKMA1 trades 0.65 °C/W higher thermal resistance for 15% smaller footprint and identical electrical specs; versus STP5NK50ZFP, it delivers 45% lower switching loss and 64% lower gate charge, enabling higher-frequency operation and tighter EMI control.

Availability

IPU50R3K0CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, AC-DC adapter primary switches, and PFC boost converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPU50R3K0CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CE family - a cost-optimized superjunction platform targeting high-efficiency, high-reliability offline power conversion in consumer and lighting applications where price-performance balance is critical.

FAQ

What is the maximum recommended gate resistor value for IPU50R3K0CEAKMA1 in a 65 kHz flyback converter?

The datasheet specifies 6 Ω intrinsic gate resistance and 4.3 nC total gate charge. For stable 65 kHz operation with minimal overshoot, a 10 Ω external series gate resistor is recommended - this limits peak gate current to <1.3 A while maintaining <20 ns rise time, avoiding shoot-through in half-bridge configurations.

Can IPU50R3K0CEAKMA1 replace IPD50R3K0CE in an existing DPAK footprint?

No - IPU50R3K0CEAKMA1 uses PG-TO251 (IPAK) with 2.3 mm lead pitch and center-drain tab, while IPD50R3K0CE uses PG-TO252 (DPAK) with 2.54 mm pitch and side-drain tab. Mechanical rework requires PCB redesign; thermal and electrical performance are otherwise identical.

Does this MOSFET require a gate driver with negative voltage capability?

No - the device's 50 V/ns dv/dt ruggedness and 3.5 V typical gate threshold voltage ensure reliable turn-off without negative gate bias. Standard 0–12 V CMOS or bipolar gate drivers (e.g., UCC27531, TC4420) are fully compatible and sufficient for all listed applications.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 1.6 A per Table 2. The SOA curve (Diagram 3) shows that at 200 V V_DS, the device supports ≤1.2 A for DC operation and ≤2.8 A for 100 µs pulses - confirming suitability for short-duration overloads in adapter and lighting applications.