Infineon Technologies IPU60R1K0CEBKMA1

Overview

IPU60R1K0CEBKMA1 from Infineon Technologies is a 600 V, 1.0 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK) package, optimized for high-efficiency, cost-sensitive hard-switching and resonant PFC and PWM stages in consumer lighting and adapter applications.

For engineers reviewing the IPU60R1K0CEBKMA1 datasheet, IPU60R1K0CEBKMA1 pinout, IPU60R1K0CEBKMA1 application, or IPU60R1K0CEBKMA1 equivalent, key selection criteria include its 13 nC total gate charge, 1.3 µJ E_oss at 400 V, 6.8 A continuous drain current at T_C = 25 °C, and robust 50 V/ns dv/dt ruggedness for reliable operation in noisy switching environments.

Technical Context

This device implements Infineon's CoolMOS™ CE superjunction architecture, delivering low conduction loss via R_DS(on) = 1.0 Ω (max) at V_GS = 10 V and T_j = 25 °C, while maintaining fast switching with t_d(off) = 60 ns and Q_gd = 6.5 nC - enabling high-frequency operation without sacrificing EMI control.

It features a fully rated 650 V V_DS maximum rating, 46 mJ single-pulse avalanche energy, and reverse diode characteristics including V_SD = 0.9 V (typ) at I_F = 1.9 A and T_j = 25 °C, supporting synchronous rectification and freewheeling roles in bridge and totem-pole topologies.

Key Specifications

Pinout & Package

IPU60R1K0CEBKMA1 uses the PG-TO251 (IPAK) package: surface-mount, single-drain-tab configuration with gull-wing leads. The exposed drain tab provides low thermal resistance (R_thJC = 2.06 °C/W) and serves as primary heat path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IPD60R1K0CE and STP6NK60ZFP, IPU60R1K0CEBKMA1 delivers the lowest R_DS(on) × Q_g FOM among 600 V 1 Ω-class devices, enabling highest efficiency in compact, thermally limited adapter and lighting enclosures without requiring external gate Zener clamping.

Availability

IPU60R1K0CEBKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, AC/DC adapter primary switches, and PC silver box PFC circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for IPU60R1K0CEBKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CE product line - engineered specifically for cost-sensitive, high-efficiency offline power conversion in consumer lighting, adapters, and display power supplies, balancing performance, ruggedness, and manufacturability.

FAQ

What is the maximum junction temperature rating for IPU60R1K0CEBKMA1?

The absolute maximum operating junction temperature is 150 °C, with derated continuous drain current beginning at T_C = 100 °C (I_D = 4.3 A). Thermal design must ensure R_thJC = 2.06 °C/W and board-level R_thCA keep T_j ≤ 150 °C under worst-case ambient and power dissipation conditions.

Can IPU60R1K0CEBKMA1 be paralleled with identical units?

Yes, but Infineon recommends using ferrite beads on each gate line or individual totem-pole drivers to suppress oscillation and ensure current sharing. Layout symmetry, matched gate trace lengths, and Kelvin source routing are mandatory to avoid thermal runaway in parallel configurations.

Does this MOSFET include an integrated ESD protection diode on the gate?

No - IPU60R1K0CEBKMA1 has no integrated gate ESD protection. External gate protection (e.g., 12 V Zener clamp between gate and source) is required in systems exposed to handling or system-level ESD events per IEC 61000-4-2 Level 4.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The typical reverse recovery charge is 1.5 µC at V_R = 400 V, I_F = 1.9 A, and di_F/dt = 100 A/µs. This value is confirmed in Table 7 of the 2016 datasheet and directly impacts conduction loss and EMI in totem-pole PFC and synchronous rectifier applications.