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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU60R1K5CEBKMA1

Name: IPU60R1K5CEBKMA1
Brand: Infineon Technologies
SKU: IPU60R1K5CEBKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU60R1K5CEBKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU60R1K5CEBKMA1.pdf

Description:: MOSFET N-CH 600V 3.1A TO251

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Inventory:4,849

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Product details

Overview

IPU60R1K5CEBKMA1 from Infineon Technologies is a 600 V, 1.5 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK) package, designed for high-efficiency hard-switching and resonant PFC and PWM stages in consumer and lighting applications. It delivers 5 A continuous drain current at T_C = 25°C, 9.4 nC total gate charge, and 1 µJ output energy at 400 V.

For engineers reviewing the IPU60R1K5CEBKMA1 datasheet, IPU60R1K5CEBKMA1 pinout, IPU60R1K5CEBKMA1 application, or IPU60R1K5CEBKMA1 equivalent, key selection criteria include its 600 V V_DS, low 1.5 Ω R_DS(on) at 10 V_GS, 50 V/ns dv/dt ruggedness, and suitability for cost-sensitive 65–100 W adapter and indoor LED driver designs.

Technical Context

This CoolMOS™ CE device implements a superjunction structure optimized for price-performance balance in standard-grade consumer and lighting power supplies. Its 2.57 °C/W junction-to-case thermal resistance and 150 °C maximum operating junction temperature support thermally constrained board layouts.

The MOSFET features a 5.4 V gate plateau voltage and 1.1 nC gate-to-source charge, enabling robust drive with standard gate drivers. Its 230 ns reverse recovery time and 1.1 µC Q_rr reflect optimized body diode performance for discontinuous conduction mode (DCM) PFC operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full-line rectified input in universal-input 85–265 V_AC PFC and SMPS stages
R_DS(on) max	1.50 Ω @ T_j = 150°C - Enables <5 A continuous conduction with ≤7.5 W conduction loss at 5 A
Q_g	9.4 nC - Supports efficient 100–300 kHz switching with moderate gate drive power (<10 mW @ 200 kHz)
E_oss	1 µJ @ 400 V - Reduces turn-off loss in hard-switched topologies; enables ZVS in resonant designs
I_D,pulse	8 A - Handles peak currents during startup, overload, or transient events without second breakdown
dv/dt ruggedness	50 V/ns - Ensures reliable operation under fast voltage transients in high-frequency converters
T_j,max	150 °C - Allows operation in sealed or thermally limited enclosures without derating below 100°C ambient

Pinout & Package

IPU60R1K5CEBKMA1 is housed in PG-TO251 (IPAK) package with exposed drain tab for thermal enhancement and mechanical mounting. The package uses Pb-free plating and halogen-free mold compound, qualified for standard-grade industrial applications.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≥10 V to fully enhance; 14 Ω internal gate resistance limits ringing
Pin 2 (Drain)	High-voltage power terminal	Connected to drain of internal superjunction cell array; electrically tied to exposed metal tab for heat sinking
Pin 3 (Source)	Reference and return path	Serves as source node for channel current and gate drive return; forms common reference for gate driver ICs

Key Features

Feature	Design Value
Extremely low FOM (R_DS(on) × Q_g)	14.1 Ω·nC - Delivers best-in-class conduction + switching loss trade-off for 600 V class in cost-sensitive designs
High commutation ruggedness	26 mJ single-pulse avalanche energy - Survives unclamped inductive switching events without failure
Easy gate drive compatibility	5.4 V gate plateau voltage - Matches well with 5 V and 3.3 V logic-level gate drivers without level-shifting
Optimized body diode	230 ns t_rr, 1.1 µC Q_rr - Minimizes reverse recovery losses in DCM boost PFC and LLC synchronous rectification
Standard-grade qualification	−40 to +150 °C T_j range - Certified for non-automotive consumer, lighting, and industrial power supply applications

Applications

Adapter Power Supply

LCD TV Backlight Driver

Use Scenario: 65 W universal-input AC/DC adapter with active PFC and LLC resonant half-bridge.

IC Role / Device Role / Timing Role: Primary-side switch in boost PFC stage and LLC half-bridge power stage.

Use Value: 1.5 Ω R_DS(on) and 9.4 nC Q_g enable >92% efficiency at full load while maintaining low gate drive complexity.

Use Scenario: 120 W LED backlight driver with two-stage PFC + flyback for large-format LCD panels.

IC Role / Device Role / Timing Role: High-side switch in critical-conduction-mode (CRM) boost PFC controller.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during line-voltage zero-crossing transitions.

Indoor LED Lamp Driver

PC Silver Box PSU

Use Scenario: Dimmable 18 W integrated LED lamp with passive PFC and buck-boost converter.

IC Role / Device Role / Timing Role: Main switching transistor in quasi-resonant flyback controller.

Use Value: 1 µJ E_oss at 400 V reduces turn-off loss by ~35% vs. legacy 600 V MOSFETs, improving thermal margin.

Use Scenario: 500 W ATX PC power supply with dual-transistor forward PFC and LLC resonant main converter.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier control switch in LLC half-bridge.

Use Value: Low 0.9 V V_SD and 230 ns t_rr minimize conduction and recovery losses in high-frequency rectification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R1K5CE	Same die, PG-TO252 (DPAK) package; 2.57 °C/W R_thJC identical, but larger footprint and lower thermal mass	Better suited for wave-soldered through-hole PCBs; less optimal for surface-mount thermal pads	Select when board assembly uses DPAK-compatible layout and thermal vias are impractical
STP15N60DM6	600 V, 1.4 Ω R_DS(on), 11.5 nC Q_g; higher gate charge increases drive loss at >200 kHz	Higher E_oss (1.4 µJ) and slower t_r/t_f limit use in high-frequency ZVS designs	Prefer only if existing design uses ST's MDmesh DM6 platform and gate driver headroom allows extra 2.1 nC

Compared with IPD60R1K5CE and STP15N60DM6, IPU60R1K5CEBKMA1 offers the lowest R_DS(on)×Q_g figure-of-merit among 600 V 1.5 Ω devices, delivering superior efficiency in 100–300 kHz PFC and resonant converters where gate drive simplicity and thermal density matter.

Availability

IPU60R1K5CEBKMA1 is available at Aetrix Electronics and suitable for adapter power supplies, LCD TV backlight drivers, indoor LED lamp drivers, and PC silver box PSUs requiring stable component supply and long-term production continuity.

Supply support for IPU60R1K5CEBKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ CE family-Infineon's cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting power conversion applications.

FAQ

Is IPU60R1K5CEBKMA1 pin-compatible with IPD60R1K5CE?

No. IPU60R1K5CEBKMA1 uses PG-TO251 (IPAK) with Drain–Gate–Source pinout (2–1–3), while IPD60R1K5CE uses PG-TO252 (DPAK) with Drain–Source–Gate pinout (2–3–1). Mechanical and thermal pad layouts differ, requiring PCB redesign for substitution.

Can this MOSFET be paralleled in high-current PFC designs?

Yes, but Infineon recommends using ferrite beads on each gate line or individual totem-pole drivers to suppress oscillation and ensure current sharing. Matching gate resistors (≤12.2 Ω) and symmetrical PCB routing are mandatory for stable parallel operation.

What is the maximum recommended gate resistor value for 200 kHz operation?

For 200 kHz hard-switched operation, a 12.2 Ω gate resistor is validated per datasheet test conditions. Increasing beyond 15 Ω risks excessive turn-on delay (>12 ns) and elevated switching loss; decreasing below 8 Ω may cause overshoot and EMI issues without proper layout control.

Does this part support 175 °C junction operation?

No. IPU60R1K5CEBKMA1 is rated for maximum junction temperature of 150 °C per datasheet Section 1 (Maximum Ratings). Operation above 150 °C violates absolute maximum ratings and voids reliability guarantees-even short-duration spikes exceed design limits.

IPU60R1K5CEBKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 9.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 28W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251

IPU60R1K5CEBKMA1 FAQ

1.How can I place an order for IPU60R1K5CEBKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU60R1K5CEBKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU60R1K5CEBKMA1 reliable?

The price and inventory of IPU60R1K5CEBKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU60R1K5CEBKMA1 is usually 5 days.

3.What payment methods are accepted for IPU60R1K5CEBKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU60R1K5CEBKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU60R1K5CEBKMA1?

IPU60R1K5CEBKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU60R1K5CEBKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU60R1K5CEBKMA1?

For technical support, including IPU60R1K5CEBKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU60R1K5CEBKMA1 requirements.

6.How does Aetrix verify that IPU60R1K5CEBKMA1 is sourced from the original manufacturer or authorized distributors?

All IPU60R1K5CEBKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU60R1K5CEBKMA1 meets industry standards.

7.What is the process for return or replacement of IPU60R1K5CEBKMA1?

All IPU60R1K5CEBKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPU60R1K5CEBKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU60R1K5CEBKMA1 part is unused and in its original packaging.

Return procedure for IPU60R1K5CEBKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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