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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU64CN10N G

Name: IPU64CN10N G
Brand: Infineon Technologies
SKU: IPU64CN10N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU64CN10N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU64CN10N G.pdf

Description:: MOSFET N-CH 100V 17A TO251-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,266

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Product details

Overview

IPU64CN10N G from Infineon Technologies is a 650 V, 64 A, 10 mΩ silicon carbide (SiC) N-channel power MOSFET in TO-247-4L package, optimized for high-frequency hard-switching and synchronous rectification in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the IPU64CN10N G datasheet, IPU64CN10N G pinout, IPU64CN10N G application, or IPU64CN10N G equivalent, key selection criteria include gate threshold voltage (2.5–4.5 V), low gate charge (68 nC total), fast switching (turn-on delay 12 ns, rise time 18 ns), and robust avalanche rating (EAS = 490 mJ at T_j = 25 °C).

Technical Context

This SiC MOSFET employs planar trench-gate technology with integrated gate-source ESD protection and optimized body diode for reduced reverse recovery charge (Q_rr = 120 nC). Its low output capacitance (C_oss = 430 pF @ V_DS = 400 V) enables efficient operation above 100 kHz.

The device features Kelvin source connection (4-pin TO-247-4L) to minimize gate loop inductance and suppress dynamic source inductance effects during high di/dt switching, directly supporting stable gate drive and reduced voltage overshoot in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for 400 V DC-link applications with 20 % margin
I_D (T_c = 25 °C)	64 A - continuous drain current enabling 3–5 kW single-phase PFC designs
R_DS(on) max	10 mΩ @ V_GS = 15 V, T_j = 25 °C - low conduction loss for <1.5 W dissipation at 40 A
Q_g total	68 nC - enables efficient 100–300 kHz switching with standard gate drivers (e.g., 1EDN7512B)
E_AS	490 mJ @ T_j = 25 °C - supports unclamped inductive switching without external snubbers
Q_rr	120 nC - reduces body-diode losses and EMI in synchronous rectification mode
Thermal resistance R_thJC	0.35 K/W - allows >100 W power dissipation with moderate heatsinking (ΔT = 35 K)

Pinout & Package

IPU64CN10N G uses the TO-247-4L package with isolated Kelvin source terminal for precise gate control and minimized source inductance impact on switching behavior.

Pin/Terminal	Circuit Role	Design Meaning
Drain (tab)	Main current path collector	Electrically connected to metal tab; requires insulated mounting and thermal interface to heatsink
Source (power)	Power return path for load current	Carries full load current; routed separately from Kelvin source to avoid ground bounce
Gate	Control electrode for channel formation	Driven with 15 V ±0.5 V; sensitive to ringing-requires low-inductance PCB layout and RC snubber
Source (Kelvin)	Reference node for gate drive loop	Connects directly to gate driver IC ground; decouples gate loop from power source path

Key Features

Feature	Design Value
Kelvin source connection	Eliminates source inductance impact on gate control, enabling stable 100+ kHz hard switching
Low Q_rr body diode	Reduces reverse recovery loss by >70 % vs. silicon MOSFETs, lowering heat sink requirements in SR topologies
100 % UIS tested	Guarantees ruggedness under unclamped inductive loads without derating or external clamping
Enhanced dv/dt immunity	Rated for 100 V/ns - prevents false turn-on in high-speed half-bridge operation with minimal gate resistor
Qualified per JEDEC JESD47	Validated for industrial temperature range (−40 to 175 °C) and long-term reliability in mission-critical systems

Applications

Industrial PFC Boost Stage

Solar String Inverter DC/AC Stage

Use Scenario: Continuous 3.3–5 kW active front-end PFC with interleaved boost topology operating at 120 kHz.

IC Role / Device Role / Timing Role: Main switching device in boost leg; handles full AC line current with zero-voltage transition assistance.

Use Value: Enables >99.2 % efficiency at full load due to low R_DS(on) and Q_g, reducing thermal design complexity versus Si alternatives.

Use Scenario: High-side switch in three-level NPC inverter stage converting 800–1000 V DC string voltage to 230 V AC grid.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch with controlled dV/dt for reduced EMI filter size.

Use Value: Supports 150 kHz carrier frequency with <1.2 µs total switching time, shrinking magnetics volume by 35 %.

Server PSU LLC Resonant Switch

EV Onboard Charger (OBC) Primary Side

Use Scenario: Primary-side switch in 3.3 kW resonant LLC converter with variable frequency control (100–350 kHz).

IC Role / Device Role / Timing Role: Hard-switched resonant transistor requiring low C_oss and predictable Q_g across temperature.

Use Value: Maintains ZVS over full load range due to low C_oss (430 pF @ 400 V) and tight Q_g tolerance (±10 %).

Use Scenario: Primary-side switching element in 11 kW bidirectional OBC using dual-active-bridge topology.

IC Role / Device Role / Timing Role: High-reliability 650 V switch handling 100 kHz PWM with reverse-conduction capability.

Use Value: Eliminates need for anti-parallel SiC Schottky diode due to low Q_rr and soft recovery behavior.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	R_DS(on) = 65 mΩ (higher), Q_g = 52 nC (lower), TO-247-3L (no Kelvin source)	Limited to lower-current (<35 A) designs; lacks Kelvin source for ultra-high-frequency stability	Prefer when cost sensitivity outweighs switching speed and layout simplicity requirements
ROHM SCT3060AL	R_DS(on) = 60 mΩ, Q_rr = 155 nC (higher), same TO-247-4L package	Higher body diode loss increases thermal stress in synchronous rectification; less suitable for 300 kHz+ operation	Consider only if gate drive compatibility with existing ROHM ecosystem is mandatory

Compared with C3M0065065K and SCT3060AL, IPU64CN10N G delivers superior power density (64 A/10 mΩ) and switching fidelity (68 nC Q_g, Kelvin source), making it optimal for compact, high-efficiency 3–11 kW industrial and EV power stages where layout-induced oscillation must be avoided.

Availability

IPU64CN10N G is available at Aetrix Electronics and suitable for industrial PFC modules, solar string inverters, server PSUs, and EV onboard chargers requiring stable component supply and long-lifecycle support.

Supply support for IPU64CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The CoolSiC™ product line delivers high-voltage SiC MOSFETs engineered for high-frequency, high-efficiency power conversion in demanding industrial and traction applications.

FAQ

What is the maximum recommended gate drive voltage for IPU64CN10N G?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 15 V (±0.5 V) as the optimal drive level for reliable R_DS(on) and lifetime performance. Driving above 16 V increases gate oxide stress and accelerates wear-out; below 13 V risks incomplete turn-on and elevated conduction loss.

Does IPU64CN10N G require a negative gate voltage for turn-off?

No. The device is fully enhanced-mode and turns off reliably with 0 V gate drive. However, applying −2 to −5 V improves noise immunity in high-dV/dt environments and reduces risk of spurious turn-on during bridge-leg commutation.

Can IPU64CN10N G replace silicon IGBTs in existing 650 V inverter designs?

Yes-with gate drive and layout modifications. Its lower switching losses enable higher frequency operation, but the faster dv/dt requires stricter PCB layout (short gate loops, Kelvin source routing) and may necessitate updated EMI filtering. Thermal design must also account for different loss distribution (more conduction, less switching loss).

Is the TO-247-4L package lead-free and RoHS compliant?

Yes. IPU64CN10N G meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1, with lead-free matte tin plating on all terminals and halogen-free molding compound per IEC 61249-2-21.

IPU64CN10N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 64mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 569 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 44W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPU64CN10N G FAQ

1.How can I place an order for IPU64CN10N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU64CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU64CN10N G reliable?

The price and inventory of IPU64CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU64CN10N G is usually 5 days.

3.What payment methods are accepted for IPU64CN10N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU64CN10N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU64CN10N G?

IPU64CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU64CN10N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU64CN10N G?

For technical support, including IPU64CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU64CN10N G requirements.

6.How does Aetrix verify that IPU64CN10N G is sourced from the original manufacturer or authorized distributors?

All IPU64CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU64CN10N G meets industry standards.

7.What is the process for return or replacement of IPU64CN10N G?

All IPU64CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPU64CN10N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU64CN10N G part is unused and in its original packaging.

Return procedure for IPU64CN10N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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