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Infineon Technologies IPU78CN10N G
- Part No.:
- IPU78CN10N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IPU78CN10N G.pdf
- Description:
- MOSFET N-CH 100V 13A TO251-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,231
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Product details
Overview
IPU78CN10N G from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO251-3 package, rated for 100 V VDS, 13 A continuous drain current at TC = 25 °C, and 78 mΩ max RDS(on) at VGS = 10 V and ID = 13 A. It features 175 °C maximum junction temperature, low gate charge (Qg = 8–11 nC), and is optimized for high-frequency switching in DC-DC converters and synchronous rectification.
For engineers reviewing the IPU78CN10N G datasheet, IPU78CN10N G pinout, IPU78CN10N G application, or IPU78CN10N G equivalent, this device is selected for its verified FOM (gate charge × RDS(on)), robust avalanche energy rating (EAS = 17 mJ), and thermal performance on minimal PCB copper area (6 cm²).
Technical Context
This OptiMOS®2 power transistor uses planar silicon technology with optimized cell pitch and trench-free structure to achieve low RDS(on) while maintaining fast switching. Its gate threshold voltage (VGS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, and its Ciss/Coss/Crss values (538–716 pF / 76–101 pF / 8–12 pF) support efficient hard-switching up to several hundred kHz.
The integrated body diode exhibits trr = 67 ns and Qrr = 114 nC at IF = 13 A, enabling use in synchronous rectifier topologies without external Schottky replacement. Thermal resistance RthJC = 4.9 K/W and RthJA = 75 K/W (min footprint, 6 cm²) define its cooling requirements in TO251-mounted applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V input bus designs with 2× safety margin |
| RDS(on) max | 78 mΩ at VGS = 10 V, ID = 13 A - enables <1 W conduction loss at 10 A |
| Qg | 8–11 nC - reduces gate drive power and enables >500 kHz switching |
| EAS | 17 mJ - withstands single-pulse inductive energy in non-clamped flyback or motor drive |
| Tj(max) | 175 °C - allows operation in sealed enclosures or high ambient industrial environments |
| tr/tf | 4–6 ns / 3–4 ns - minimizes switching transition losses in hard-switched SMPS |
| ID,pulse | 52 A - supports short-term overload in UPS or e-fuse circuits |
Pinout & Package
IPU78CN10N G is housed in PG-TO251-3 (IPAK) package: surface-mount variant of TO-92 with isolated tab, compatible with wave soldering and reflow. The plastic case provides creepage/clearance compliant with reinforced insulation requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects directly to PCB ground plane for thermal and EMI control |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <11 nC charge; sensitive to ESD (±20 V rating) |
| Pin 3 (Drain) | Power output | Internally connected to exposed metal tab; must be routed to high-current trace or thermal pad |
Key Features
| Feature | Design Value |
|---|---|
| N-channel normal-level logic | Turns fully on with 10 V gate drive-no level-shifting needed for standard PWM controllers |
| Optimized FOM (Qg × RDS(on)) | ~0.87 nC·Ω - balances switching loss vs. conduction loss in 300–600 kHz DC-DC stages |
| Robust body diode | trr = 67 ns, Qrr = 114 nC - reduces reverse recovery loss and EMI in synchronous buck outputs |
| Pb-free & RoHS-compliant | Lead plating meets JEDEC J-STD-20 reflow profile - suitable for lead-free assembly lines |
Applications
| Server VRM | Industrial DC-DC Converter |
|---|---|
Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter. Use Value: 78 mΩ RDS(on) and 11 nC Qg reduce total power loss by 12% vs. legacy 100 V MOSFETs at 10 A/phase. | Use Scenario: Isolated 24 V to 5 V/3.3 V supply in PLC backplane modules. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology operating at 350 kHz. Use Value: 175 °C Tj,max and 4.9 K/W RthJC sustain full load under 70 °C ambient without derating. |
| Solar Microinverter | Automotive DC-DC Module |
Use Scenario: DC link switching in half-bridge stage of 300 W microinverter. IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during MPPT modulation. Use Value: Body diode Qrr = 114 nC limits reverse recovery overshoot, reducing snubber size by 30%. | Use Scenario: 12 V to 48 V bidirectional DC-DC in 48 V mild-hybrid vehicle architecture. IC Role / Device Role / Timing Role: Synchronous rectifier in dual-active-bridge (DAB) secondary side. Use Value: JEDEC-qualified reliability and 100 V VDS margin ensure operation across cold-crank (4 V) to load-dump (60 V) transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD78CN10N G | Same RDS(on) spec (78 mΩ), but in PG-TO252-3 package with lower RthJA (62 K/W) | Better thermal performance on PCBs with limited copper area; not suitable for through-hole mounting | Select when board space permits DPAK and thermal budget is tighter than mechanical constraints |
| IPP80CN10N G | Higher RDS(on) max (80 mΩ), TO-220-3 package, higher Ptot (31 W) | Preferred for prototyping or low-volume assemblies requiring hand-soldering and heatsink attachment | Select when mechanical mounting flexibility and serviceability outweigh surface-mount density needs |
Compared with IPD78CN10N G and IPP80CN10N G, IPU78CN10N G offers identical electrical specs in a smaller, surface-mount IPAK package-ideal for automated production where board real estate and thermal interface consistency are prioritized over manual assembly.
Availability
IPU78CN10N G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and solar microinverters requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.
Supply support for IPU78CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
IPU78CN10N G belongs to the OptiMOS®2 family-designed specifically for high-efficiency, high-frequency power conversion in computing, industrial, and renewable energy systems where low RDS(on) and fast switching are critical.
FAQ
What is the maximum allowable gate-source voltage for IPU78CN10N G?
The absolute maximum gate-source voltage is ±20 V, per the datasheet's "Maximum ratings" table. Operation beyond ±20 V risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between 0 V and 10 V, with transient overshoot suppressed using RC snubbers or gate zeners.
Can IPU78CN10N G be used in linear (analog) mode operation?
No-it is not characterized or guaranteed for linear mode. The Safe Operating Area (SOA) curve on page 4 shows only pulsed operation up to 100 V and 13 A, with no DC SOA region. Linear use would exceed thermal limits due to lack of RthJA derating data and uncontrolled hot-spot formation.
Does IPU78CN10N G have avalanche ruggedness specified for repetitive stress?
Only single-pulse avalanche energy (EAS = 17 mJ) is specified. The datasheet does not provide repetitive avalanche ratings, SOA curves for repetitive conditions, or test methodology for cycling. Designers must avoid repeated avalanche events and implement primary-side clamping or ZVS techniques.
Is the PG-TO251-3 package of IPU78CN10N G compatible with standard TO-251 footprints?
Yes-the PG-TO251-3 outline matches JEDEC TO-251AA mechanical dimensions. Pad layout follows IPC-7351B "IPAK" land pattern: 2.3 mm pin pitch, 1.27 mm pin width, and 5.0 mm × 6.2 mm body. Thermal pad design must allocate ≥6 cm² copper area per the datasheet's RthJA test condition.
IPU78CN10N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 78mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 716 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 31W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO251-3
IPU78CN10N G FAQ
1.How can I place an order for IPU78CN10N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPU78CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPU78CN10N G reliable?
The price and inventory of IPU78CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU78CN10N G is usually 5 days.
3.What payment methods are accepted for IPU78CN10N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU78CN10N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPU78CN10N G?
IPU78CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPU78CN10N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPU78CN10N G?
For technical support, including IPU78CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU78CN10N G requirements.
6.How does Aetrix verify that IPU78CN10N G is sourced from the original manufacturer or authorized distributors?
All IPU78CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU78CN10N G meets industry standards.
7.What is the process for return or replacement of IPU78CN10N G?
All IPU78CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPU78CN10N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPU78CN10N G part is unused and in its original packaging.
Return procedure for IPU78CN10N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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