Infineon Technologies IPU80R1K0CEAKMA1

Overview

IPU80R1K0CEAKMA1 from Infineon Technologies is an 800 V, 0.95 Ω R_DS(on), CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK) package, optimized for high-efficiency QR flyback converters in LED retrofit lighting. It delivers 5.7 A continuous drain current at T_C = 25°C, features 31 nC total gate charge and 69 pF effective output capacitance (time-related), enabling fast switching with low conduction and switching losses.

For engineers reviewing the IPU80R1K0CEAKMA1 datasheet, IPU80R1K0CEAKMA1 pinout, IPU80R1K0CEAKMA1 application, or IPU80R1K0CEAKMA1 equivalent, key selection criteria include its 800 V V_DS, JEDEC-qualified ruggedness, low Q_g/C_oss trade-off, and suitability for thermally constrained SMD designs requiring high dv/dt immunity and reliable avalanche performance.

Technical Context

This device implements Infineon's CoolMOS™ CE technology-a charge-compensated superjunction structure enabling high-voltage capability with reduced specific on-resistance and improved dynamic performance. Its 50 V/ns dv/dt rating and 230 mJ single-pulse avalanche energy support robust operation in discontinuous conduction mode (DCM) flyback topologies under transient stress.

The MOSFET exhibits a typical gate threshold voltage of 3 V and plateau voltage of 5.5 V, with low effective output capacitance (C_o(tr) = 69 pF) and input capacitance (C_iss = 785 pF) at V_DS = 100 V, facilitating precise gate drive timing and minimizing switching loss during hard commutation.

Key Specifications

Pinout & Package

IPU80R1K0CEAKMA1 is housed in PG-TO251 (IPAK), a surface-mount package with exposed drain pad for enhanced thermal performance. The package provides 1.5 °C/W junction-to-case thermal resistance and supports reflow soldering up to 260 °C (MSL 1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IPD80R1K0CE and STP80NF55-08, IPU80R1K0CEAKMA1 offers optimal balance of low R_DS(on), low Q_g, and proven dv/dt/avalanche robustness-making it the preferred choice for space-constrained, high-reliability QR flyback designs where thermal management relies on PCB copper rather than external heatsinks.

Availability

IPU80R1K0CEAKMA1 is available at Aetrix Electronics and suitable for LED retrofit lighting, QR flyback power supplies, industrial control power modules, and AC-DC adapters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPU80R1K0CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CE family-designed specifically for high-efficiency, high-density AC/DC conversion in cost-sensitive, thermally constrained applications such as LED lighting and universal-input SMPS.

FAQ

What is the maximum continuous drain current for IPU80R1K0CEAKMA1 at 100°C case temperature?

The maximum continuous drain current is 3.6 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.3 datasheet. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and must be applied with appropriate PCB copper area (6 cm² recommended) to maintain junction temperature ≤150°C.

Does IPU80R1K0CEAKMA1 support synchronous rectification in flyback topologies?

No-it functions exclusively as the primary-side high-voltage switch. Synchronous rectification requires a secondary-side MOSFET with low V_GS(th) and fast body diode recovery; this device's body diode has 520 ns t_rr and 18 A I_RRM, making it unsuitable as a synchronous rectifier but adequate for freewheeling in DCM operation.

Can IPU80R1K0CEAKMA1 replace older CoolMOS™ C6 or C7 devices in existing designs?

Yes, with validation: it shares the same 800 V rating and similar R_DS(on)/Q_g profile but features improved C_o(tr) and dv/dt ruggedness. Layout changes may be needed due to IPAK's different thermal pad geometry and pin 2 (drain) placement versus TO-220 or TO-252 footprints.

What is the gate-source leakage current specification at 20 V and 150°C?

The gate-source leakage current (I_GSS) is rated at ≤100 nA at V_GS = 20 V and T_j = 25°C (Table 4). No maximum value is specified at 150°C in the Rev. 2.3 datasheet; designers should assume worst-case drift based on Arrhenius modeling or consult Infineon's application note AN2019-05 for high-temperature gate leakage behavior.